EP 55 TRANSISTOR Search Results

Contextual Info: SN65472-EP www.ti.com SLRS061 – SEPTEMBER 2013 DUAL PERIPHERAL DRIVER Check for Samples: SN65472-EP FEATURES 1 • • • • • • • Characterized for Use up to 300 mA High-Voltage Outputs No Output Latch-Up at 55 V After Conducting 300 mA Medium-Speed Switching

Contextual Info: LM2902-EP www.ti.com SGLS335A – APRIL 2006 – REVISED APRIL 2006 QUADRUPLE OPERATIONAL AMPLIFIER FEATURES • • • • • 1 • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C

LM2902KV-EP

Abstract: LM2902 15-V 2902KAE LM2902KAVMDREP
Contextual Info: LM2902-EP www.ti.com SGLS335A – APRIL 2006 – REVISED APRIL 2006 QUADRUPLE OPERATIONAL AMPLIFIER FEATURES • • • • • 1 • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C

Contextual Info: LM2902-EP www.ti.com SGLS335A – APRIL 2006 – REVISED APRIL 2006 QUADRUPLE OPERATIONAL AMPLIFIER FEATURES • • • • • 1 • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C

Contextual Info: LM2902-EP www.ti.com SGLS335A – APRIL 2006 – REVISED APRIL 2006 QUADRUPLE OPERATIONAL AMPLIFIER FEATURES • • • • • 1 • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C

Contextual Info: LM2902-EP www.ti.com SGLS335A – APRIL 2006 – REVISED APRIL 2006 QUADRUPLE OPERATIONAL AMPLIFIER FEATURES • • • • • 1 • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C

LM2902KV-EP

Abstract: 15-V LM2902
Contextual Info: LM2902-EP www.ti.com SGLS335A – APRIL 2006 – REVISED APRIL 2006 QUADRUPLE OPERATIONAL AMPLIFIER FEATURES • • • • • 1 • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C

ss32 control pack

Contextual Info: TPS75003-EP www.ti.com SGLS311 – DECEMBER 2006 Triple-Supply Power Management IC for Powering FPGAs and DSPs FEATURES • • • • • • • • • • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C

CDRH8D43-150

Abstract: c15 dms ldo
Contextual Info: TPS75003-EP www.ti.com SGLS311 – DECEMBER 2006 Triple-Supply Power Management IC for Powering FPGAs and DSPs FEATURES • • • • • • • • • • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C

ss32 control pack

Contextual Info: TPS75003-EP www.ti.com SGLS311 – DECEMBER 2006 Triple-Supply Power Management IC for Powering FPGAs and DSPs FEATURES • • • • • • • • • • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C

ss32 control pack

Abstract: control pack ss32
Contextual Info: TPS75003-EP www.ti.com SGLS311 – DECEMBER 2006 Triple-Supply Power Management IC for Powering FPGAs and DSPs FEATURES • • • • • • • • • • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C

ss32 control pack

Abstract: do214ab CDRH6D38 CDRH8D43 Si2323DS SS32 TPS75003 TPS75003-EP TPS75003MRHLREP EN298
Contextual Info: TPS75003-EP www.ti.com SGLS311 – DECEMBER 2006 Triple-Supply Power Management IC for Powering FPGAs and DSPs FEATURES • • • • • • • • • • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C

Contextual Info: TPS75003-EP www.ti.com SGLS311 – DECEMBER 2006 Triple-Supply Power Management IC for Powering FPGAs and DSPs FEATURES • • • • • • • • • • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C

Contextual Info: TPS75003-EP www.ti.com SGLS311 – DECEMBER 2006 Triple-Supply Power Management IC for Powering FPGAs and DSPs FEATURES • • • • • • • • • • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C

n4300

Abstract: 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N1507 2N3419 2N1711
Contextual Info: Case T ype No. C o n s tru c tio n see note 1 Silicon Transistors M a xim u m R a tin g s a t2 5 °C am b. S P E C IA L C h a ra c te ris tic s FE A T U R E S h h FE V CB V V CE V v EB V •c A 15 2 30 15 2 M in. P to t W mA 0-2 10 50 20 0-2 10 50 20 Max.

AM1011-500

Abstract: M198 SGS-THOMSON 435
Contextual Info: AM1011-500 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN 10:1 LOAD VSWR CAPABILITY @ 10µS., 1% DUTY SIXPAC HERMETIC METAL/CERAMIC PACKAGE EMITTER SITE BALLASTED OVERLAY GEOMETRY REFRACTORY/GOLD METALLIZATION

BDS940

Abstract: BOS938 lem HA BDS934 BDS936 BDS938 BDS942 USB002 smd transistors 458
Contextual Info: Philips Component« BDS934/936/938/940/942 Datasheet status Product specification date of Issue April 1991 PNP silicon epitaxial base power transistors PINNING -SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors

cii 117 q

Abstract: ic 5657
Contextual Info: IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA

100A6

Abstract: IRGP4078DPBF
Contextual Info: IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA

81450M

Abstract: MSC81450M
Contextual Info: MSC81450M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE POUT = 450 W MIN. WITH 7.0 dB GAIN .400 x .500 2LFL S038

2SC3018

Abstract: NPN Silicon Epitaxial Planar Transistor High volt
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3018 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION 2 S C 3 0 1 8 is a silicon NPN epitaxial planar typ e tra n sisto r desig OUTLINE DRAWING Dimensions in mm ned fo r 7 .2 V o lts VHF pow er am plifiers applications. FEATURES

2sc2904 TRANSISTOR

Abstract: 2SC2904 hf amplifier 100w T-40
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2904 NPN EP ITA X IA L PLANAR T Y P E DISCRETIO N OUTLINE DRAWING 2 S C 2 9 0 4 is a silicon N P N epitaxial planar type transistor Dimensions in mm sp e cific a lly designed fo r high pow er a m plifiers in H F band. R1 FEATURES

2SC2056

Abstract: RF NPN POWER TRANSISTOR 7 WATT 175MHZ TO-39 c b t8e BH Rf transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2056 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2056 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band portable or hand-held radio applications. D im e n sio n s in m m

Contextual Info: Sheet No. 1/2 DESIGNED CHECKED CHECKED APPROVED tôppiüfê/Product Specification nofiíá/Type Number: U N R 3 2 A M 0 0 [~L~| 1 ÍHEO/Type v U Ziy h ^ V v X ^ / S i l icon Transistors ffljÊ/AppI icat ion ^ v^^HËlSfffl/'Digi tal Circuit ^Hie/Structure