EMITTER SWITCHED BIPOLAR TRANSISTOR Search Results

r21 diode

Contextual Info: APTES45SK120CT1G Buck chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 45A @ TC = 80°C Application • Power factor corrector • AC and DC motor control • Switched Mode Power Supplies Features • Emitter Switched Bipolar Transistor® ESBT®

Contextual Info: APTES45SK120CT1G Buck chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 45A @ TC = 80°C Application • Power factor corrector • AC and DC motor control • Switched Mode Power Supplies Features • Emitter Switched Bipolar Transistor® ESBT®

Contextual Info: APTES45DA120CT1G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 45A @ TC = 80°C Application • DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage

r21 diode

Abstract: ESBT vrrm 400v if 20A ultra fast recovery diode #R3A
Contextual Info: APTES45DA120CT1G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 45A @ TC = 80°C Application • DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage

power supply schematic diagram

Abstract: 3 phase inverter schematic diagram SMPS SCHEMATIC DIAGRAM PFC smps design schematic diagram solar inverter smps Power Supply Schematic Diagram hv 1000 inverter schematic diagram 6 pin smps IC ESBT smps 450 W
Contextual Info: ESBT Emitter Switched Bipolar Transistors July 2007 www.st.com/esbt The ESBT product family Based on an emitter switching concept, the new ESBT family of high-performance power actuators provides a simple, cost-effective solution for applications requiring

transformer egston

Abstract: 702 TRANSISTOR smd AM003536 Egston V7142A smd schottky diode 702 universal input voltage power supply v7142 702 transistor smd code etd29 14 pin vertical
Contextual Info: AN2844 Application note 15 W wide range SMPS for metering based on ESBT STC03DE220HV and L6565 PWM controller 1 Introduction This document describes a 15-W flyback switched mode power supply SMPS application that uses an emitter-switched bipolar transistor (ESBT™) switch (STC03DE220HV) and

ignition driver

Abstract: FJAFS1510A fairchild Resonant IC FJAFS1510ATU FDC655 HV cascode smps cascode smps
Contextual Info: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies

Contextual Info: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies

fairchild power bjt

Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
Contextual Info: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver

HV cascode smps

Abstract: STC05DE120HV JESD97 flyback smps c05de
Contextual Info: STC05DE120HV Hybrid emitter switched bipolar transistor ESBT 1200V - 5A - 0.18 W Target Specification General features Table 1. General features VCS ON IC RCS(ON) 0.9V 5A 0.18Ω • High voltage / low current Cascode configuration ■ Low equivalent on resistance

APTES80DA120C3G

Contextual Info: APTES80DA120C3G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 80A @ TC = 80°C Application • Power factor corrector Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage - High voltage rating - Ultra fast switching speed

Contextual Info: APTES80DA120C3G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 80A @ TC = 80°C Application • Power factor corrector Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage - High voltage rating - Ultra fast switching speed

HV cascode smps

Abstract: JESD97 STC05DE120HV
Contextual Info: STC05DE120HV Hybrid emitter switched bipolar transistor ESBT 1200V - 5A - 0.18 W Target Specification General features Table 1. General features VCS ON IC RCS(ON) 0.9V 5A 0.18Ω • High voltage / low current Cascode configuration ■ Low equivalent on resistance

ST 358

Abstract: isotop bipolar JESD97 STE70IE120 E70IE120
Contextual Info: STE70IE120 Monolithic Emitter Switched Bipolar Transistor ESBT 1200 V - 70 A - 0.014 Ω Power Module Target data General features VCS ON IC RCS(ON) 1V 70A 0.014W • High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance

Contextual Info: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz

Contextual Info: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz

HV cascode smps

Abstract: C06IE170HV JESD97 STC06IE170HV
Contextual Info: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz

Contextual Info: STC04IE170HP Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω • High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch, up to 150 kHz

STC04IE170HV

Abstract: C04IE170HV 12676
Contextual Info: STC04IE170HV Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω • High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz

JESD97

Abstract: P12IE95F4 STP12IE95F4 o811
Contextual Info: STP12IE95F4 Emitter Switched Bipolar Transistor ESBT 950 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz

P12IE95F4

Abstract: STP12IE95F4 JESD97
Contextual Info: STP12IE95F4 Emitter Switched Bipolar Transistor ESBT 950 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz

Contextual Info: STC04IE170HV Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features • VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz

C04IE170HP

Abstract: STC04IE170HP
Contextual Info: STC04IE170HP Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω • High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch, up to 150 kHz

emitter switched bipolar transistor

Abstract: C12IE90HV JESD97 STC12IE90HV
Contextual Info: STC12IE90HV Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz