EM 2 Search Results

Contextual Info: REVISION L TA B LE 4 END TO END "L" DV TO DV DV TO EM -TEX DV TO EM (-SEX) EM (-TEX) TO EM (-TEX) EM (-TEX) TO EM (-SEX) EM (-SEX) TO EM (-SEX) DV-N TO DV-N DV-N TO EM -N (-TEX) DV-N TO EM -N (-SEX) 1.150[28.21 ] 1.0 6 5[27 .05] 1.0 3 6[26 .31 ] .980(24.89]

em 518 diode

Abstract: em 513 diode diode em 513 diode 1600 rectifier
Contextual Info: EM 513, EM 516, EM 518 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A

EM1C

Abstract: AM01 AM01A AM01Z EM01 EM01A EM01Z EM 1C
Contextual Info: Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter I F (AV) (A) VRM (V) Type No. AM01Z AM01 AM01A EM01Z EM01 EM01A EM 1Y EM 1Z EM 1 EM 1A EM 1B EM 1C 200 400 600 200 400 600 100 200 400 600 800 1000 IFSM (A) Tj (°C)

BYY91

Abstract: BYY88 BYY92 BYY90 BYY32 BY154 BYY31 byy34 BYY35 BYY36
Contextual Info: Silicon Rectifiers S ilic o n R e c tifie rs nom. current 0,5 A and 1 A in epoxy packages Type M axim um Ratings Code JEDEC Code ITT Peak repetitive reverse current V rrl 1N 2070 — 1 N 4001 1 N 4002 1 N 4003 _ EM EM EM EM EM EM EM 1 N 4004 1 N 4005 1 N 4006

EM1C

Contextual Info: Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter I F（ AV） （A） VRM （V） Type No. AM01Z AM01 AM01A EM01Z EM01 EM01A EM 1Y EM 1Z EM 1 EM 1A EM 1B EM 1C 200 400 600 200 400 600 100 200 400 600 800 1000 IFSM

samtec erm8

Abstract: erm8 samtec ERM8-EM ASP Series samtec
Contextual Info: F-211 ERF8–020–01–L–D–EM2–TR ERM8–060–01–L–D–EM2–TR 0,80mm .0315" ERM8-EM, ERF8-EM SERIES RUGGED EDGE MOUNT STRIPS ERM8-EM Board Mates: ERF8 ERM8-EM Cable Mates: ERCD, ERDP POSITIONS PER ROW ERM8 PLATING OPTION 01 ERF8-EM Board Mates:

853f

Abstract: 4007D 4011d MEM780P 4016P 4007F MEM855P mu-6-0103 855F MEM851P
Contextual Info: MOSFETs C/MOS & MULTIFET DEVICES COMPOSANTS MOSFÈTs C/MOS & MULTIFET MOSFETs C/MOS & MULTIFET BAUELEMENTE MULTIFET SW ITCHES ELECTRICAL CHARACTERISTICS No. Part Ho. # *M EM 780P * M EM 780D * M EM 780F JF*MEM 851P *M EM 851D *M EM 851F ‘ M EM 853P *M EM 853D

ASP Series samtec

Contextual Info: F -21 1-1 E R F 8 -0 2 0 -0 1 -L -D -E M 2 -T R E R M 8 -0 6 0 -0 1 -L -D -E M 2 -T R 0,80mm .0315" ERM 8-EM , ERF8-EM SERIES RUGGED EDGE MOUNT STRIPS ERM8-EM Board Mates: ERF8 ERM8-EM Cable Mates: ERCD, ERDP ERM8 ERF8-EM Board Mates: ERM8 ERF8-EM Cable Mates:

opt 300

Abstract: COP8-EMA-44QFP
Contextual Info: Accessories Priced Individually COP8-EM-AJ EM-K-COP8-AJ COP8-EM-SA (EM-K-COP8-SA) COP8-EM-SG (EM-K-COP8-SG) COP8 OTP/ROM Emulation Module Kit Part Numbers and Contents X=Included in kit; OPT=Optional as needed. Metalink ordering numbers are in ( ). National #

mu 200 abb

Contextual Info: C/EM 2 C/EM 2 Abstimmindikatorröhre Die Philips C/EM 2 ist eine Anzeigeröhre zur Feststellung der richtigen Abstim m ung des Em pfängers auf die gewünschte Station. Sie arbeitet nach ähnlichen G rundsätzen wie die EM 1 und ist m ithin eine Hoch­ vakuum röhre m it einem konischen Schirm, der am Kopfende der Röhre

EM Microelectronic

Abstract: passivation HV50 EM MICROELECTRONIC - MARIN SA
Contextual Info: EM Microelectronic Marin SA Chip Interconnection Straight Wall Gold Bumping EM Microelectronic - Marin S.A. http://www.emmicroelectronic.com Straight Wall Gold Bump EM Microelectronic - Marin S.A. http://www.emmicroelectronic.com Straight Wall Gold Bump EM Microelectronic - Marin S.A.

Contextual Info: F-207 0,635mm Q2 EDGE MOUNT QFS-EM SERIES SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?QMS-EM or www.samtec.com?QFS-EM Insulator Material: Liquid Crystal m Polymer Terminal & Ground Plane Material: Phosphor Bronze

S46 SMD

Abstract: SPG8640 EM6607 SPG8640AN EM6617 EM6620 EM6621 EM6622 EM6625 EM6640
Contextual Info: R EM MICROELECTRONIC - MARIN SA EME66xx Hardware Description EM66xx IN-CIRCUIT EMULATOR HARDWARE DESCRIPTION Version 2.8 October 2005 Copyright 2005, EM Microelectronic-Marin SA 1 www.emmicroelectronic.com EME66xx R Hardware Description Copyright © 2005, EM Microelectronic-Marin SA

SMD DIODE 513

Contextual Info: 1N4001.1N4007, 1N4007-1300 EM 513, EM 516, EM 518 Silicon Rectifier Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse •—nax . ç/ 2-6 X _ — 5 0 .2000 V

Contextual Info: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features                    !"#$ Mechanical Data      %&$"' %&$" 

wv1 transistor

Contextual Info: SEMICONDUCTOR KID65501P/FKID65507P/F TECHNICAL DATA BIPOLAR DIGITAL INTEGRATED CIRCUIT SINGLE DRIVER KTD65501P/F COMMON EM ITTER . KID65502P/F COMMON EM ITTER . KID65503P/F COMMON EM ITTER . KID65504P/F COMMON EM ITTER . KID65505P/F COMMON COLLECTOR. KID65506P/F COMMON COLLECTOR.

Contextual Info: E R F 8 -0 2 0 -0 1 -L -D -E M 2 -T R RUGGED EDGE MOUNT STRIPS ERM8-EM Board Mates: c d t /i o ERF8 ERM8-EM Cable Mates: PLATING OPTION P N POSITIONS ER M 8Q per row EM 2 OTHER OPTION ERCD, ERDP ERF8-EM Board Mates: -L ERM8 ERF8-EM Cable Mates: ERCD, ERDP

EM518

Abstract: em 518 diode Diode EM513 em 513 diode EM513 EM516
Contextual Info: EM513, EM516, EM518 SILICON RECTIFIERS Reverse Voltage – 1600 to 2000 Volts Forward Current – 1.0 Ampere Features • Plastic case in DO-41 package. Absolute Maximum Ratings Ta = 25oC Symbols EM 513 EM 516 EM 518 Units Maximum repetitive peak reverse voltage

Contextual Info: F-205-1 -EM2 H SEC8-130-01-SM -D-EM 2 ,80mm HI-SPEED SOCKET SPECIFICATIONS HSEC8-EM SERIES Mates with 1,60mm .062" cards Mates with: 1,6mm thick cards, EEDP For complete specifications see www.samtec.com?HSEC8-EM Insulator Material: Liquid Crystal Polymer

EM6503

Abstract: EM6504 EM6505 EM6517 EM6520 EM6521 EM6522 EM65XX EM6523 SO18 Package
Contextual Info: EM MICROELECTRONIC - MARIN SA EM65XX EM65XX Datasheet MFP versions of EM66XX Mask Rom EM Microelectronic-Marin SA Tel +41 32 755 51 11 Fax +41 32 755 54 03 http://www.emmicroelectronic.com 03/02 REV. H/447 Copyright  2002, EM Microelectronic-Marin SA

Fluorescent

Abstract: weerstand
Contextual Info: C/EM 2 KATHODESTRAALINDICATOR D e k ath o d estraalin d icato r ty p e C/EM 2 d ient voor optische indicatie in een ontvangtoestel. In principe k o m t hij overeen m et h et ty p e EM 1, die in h e t vorige hoofdstuk is beschreven. Hij verschilt m et de EM 1 d aarin , d a t h et lichtende beeid u it tw ee vleugels

6cb6

Abstract: AMPLIFICADOR
Contextual Info: IBBAFE MINIWATT PENTODO para uso como amplificadora de R.F. em rádios e F.I. em televisáo. Aquecimento: indireto por A.C. ou D.C. alimentacáo em série Vf = 3,15 V I = 0,6 A Tempo de aquecimento : 11 ssgundos Dimensóes em mm mqxfl al S 83 6 j2 ff555Jjí

Contextual Info: Memory IC 16kbit serial ferroelectric memory BR 24C F16F The BR24CF16F is a non-volatile ferroelectric m em ory developed for use in ROHM’s non-volatile m em ory technolo­ gy and ferroelectric technology. Using a ferroelectric m em ory enables faster w riting speeds than EEPROM and flash

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC635/637/639 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector Em itter Voltage at R be =1 Kohm C ollector Em itter Voltage C ollector Em itter Voltage