ELECTROABSORPTION Search Results

Contextual Info: HL1566AF 1.55 jam Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 |_im InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is

E2500

Abstract: E2502 E2505 E2505H54 E2505H55 E2505H56 E2505H57 E2505H58 E2505H59 laser chirp parameter
Contextual Info: Data Sheet August 2001 E2500-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultralong-Reach Applications Applications • SONET/SDH extended-reach applications ■ High-capacity DWDM system applications ■ High-speed data communications

NX8560MC

Abstract: NX8560MC-CC-AZ NX8560MCS NX8560MCS-BC-AZ NX8560MCS-CC-AZ 10 gb laser diode NX8560MC Series
Contextual Info: PRELIMINARY DATA SHEET NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB NX8560MC LASER DIODE MODULE WITH DRIVER SERIES FOR 10 Gb/s APPLICATIONS FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR NEC's NX8560MC Series is an Electro-Absorption EA Modulator integrated, 1550 nm Multiple Quantum Well (MQW)

BD 266 S

Abstract: 266l lucent microelectronics pump laser lucent microelectronics pump laser 980 Lucent M-266L31
Contextual Info: Advance Data Sheet October 1996 microelectronics group Lucent Technologies Bell Labs Innovations 266-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultra Long-Reach Applications (>600 km) Applications • SONET/SDH extended-reach applications

E2502

Abstract: LUCENT E2500 series Lucent E2502H21 lucent E2500 E2502H50
Contextual Info: Data Sheet September 1998 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations E2500-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultralong-Reach Applications (>600 km) The E2500 EM-ILM, the newest generation of the award-winning 266-Type EM-ILM, features an integrated modulator

Electroabsorption modulator

Contextual Info: WZ700004B 1/6 MITSUBISHI (OPTICAL DEVICES) FU-632SEA-xx1Mxx 1.55 µm EAM-LD MODULE WITH SINGLEMODE FIBER PIGTAIL DESCRIPTION Module type FU-632SEA-x61Mxx/-x31Mxx is an electroabsorption modulator integrated DFB-LD module with single mode optical fiber. This module is suitable for a light source of long haul

NDL7911P

Abstract: NDL7911PD477 NDL7911PD485 NDL7911PD493 NDL7911PD501 NDL7911PD509 NDL7911PD517 NDL7911PD525 NDL7911PD533
Contextual Info: 1550 nm OPTICAL FIBER COMM. EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s D-WDM NDL7911P ULTRALONG-REACH APPLICATIONS 360 km SERIES FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR The NDL7911P Series is an EA modulator integrated 1550 nm

bc 303 transistor

Abstract: transistor bc 318 NX8564-AZ NX8564LE NX8565-AZ NX8565LE NX8566-AZ NX8566LE 160832
Contextual Info: NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS NX8564LE NX8565LE NX8566LE SERIES FEATURES • INTEGRATED ELECTROABSORPTION MODULATOR • VERY LOW DISPERSION PENALTY: Over 360 km 6480 ps/nm , NX8564LE-BC/CC

electroabsorption

Abstract: ic vrm NDL7912P NDL7912PD477 NDL7912PD485 NDL7912PD493 NDL7912PD501 NDL7912PD509 NDL7912PD517 NDL7912PD525
Contextual Info: 1550 nm OPTICAL FIBER COMM. EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s D-WDM NDL7912P ULTRALONG-REACH APPLICATIONS 600 km SERIES FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR The NDL7912P is an EA modulator integrated 1550 nm DFBLD module for 2.5 Gb/s. The newly developed bandgap energy

NX8564LE311-CC

Abstract: NX8564LE318-CC NX8564LE326-CC NX8564LE334-CC NX8564LE342-CC NX8564LE350-CC NX8564LE358-CC NX8564LE366-CC NX8564LE-CC 160832
Contextual Info: EA MODULATOR INTEGRATED 1550 nm MQW-DFB LASER DIODE MODULE NX8564LE-CC FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km APPLICATIONS FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR The NX8564LE-CC is an Electro-Absorption EA modulator integrated, 1550 nm Multiple Quantum Well (MQW) structured

AP03-049

Abstract: electroabsorption Electroabsorption modulator 10 gb laser diode E2551 E2551H57 E2551H58 E2551H59 E2581 IEC60825-1
Contextual Info: Data Sheet October 2003 E2551 10 Gb/s EML Modules for up to 80 km Transmission Description 10 G b/ s Tr iQ ui E2 LEC nt OP TO E La 551 TRO NI se CS rM od ul e Features • Integrated electroabsorption modulator ■ 1.5 µm wavelength, full C-band ■ Characterized for 10 Gb/s operation

Agere E2505

Abstract: E2500 E2502 E2505 E2505H54 E2505H55 E2505H56 E2505H57 E2505H58 E2505H59
Contextual Info: Data Sheet, Rev. 1 September 2001 E2500-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultralong-Reach Applications Applications • SONET/SDH extended-reach applications ■ High-capacity DWDM system applications ■ High-speed data communications

edfa rise time specifications

Abstract: 1720 EDFA 266L32 lucent microelectronics pump laser
Contextual Info: Advance Data Sheet August 1996 microelectronics group Lucent Technologies Bell Labs Innovations 266-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultra Long-Reach Applications (>600 km) Applications • SONET/SDH extended-reach applications

HL1569AF

Abstract: ld501 Hitachi DSA0047
Contextual Info: HL1569AF 1.55 µm Laser Diode with EA Modulator ADE-208-834A Z 2nd Edition Dec. 2000 Description The HL1569AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is

NX8560MC Series

Abstract: 10 gb laser diode NX8560MC NX8560MC-CC NX8560MCS NX8560MCS-BC NX8560MCS-CC
Contextual Info: PRELIMINARY DATA SHEET NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB NX8560MC LASER DIODE MODULE WITH DRIVER SERIES FOR 10 Gb/s APPLICATIONS FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR NEC's NX8560MC Series is an Electro-Absorption EA Modulator integrated, 1550 nm Multiple Quantum Well (MQW)

bc 303 transistor

Abstract: NX8564LE NX8566LE UL1581VW-1
Contextual Info: NEC'S EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS NX8564/ NX8565/ NX8566LE Series FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR NEC's NX8564/8565/8566LE Series are Electro-Absorption

vs-s1558

Abstract: vss 1558 VSC7989-W FLD5F10NP PRBS23 VSC7989CD
Contextual Info: VSC7989 Data Sheet SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver FEATURES APPLICATIONS ● Rise and Fall Times Less Than 35ps ● SONET/SDH at 2.488Gb/s, 9.952Gb/s, 10.7Gb/s ● High-Speed Operation Up to 10.7Gb/s NRZ Data ● OC-192 Transponder Modules

EAM Laser Driver

Abstract: optical Driver MZ EAM laser rz driver receiver PIN g709 diode STM-64 VSC1234 VSC7992 VSC7999
Contextual Info: PHYSICAL LAYER PRODUCT TRANSPORT PRODUCT VSC7992 10.7 Gb/s RZ or NRZ Laser Modulator Driver BENEFITS: Selectable RZ modulation capable of directly driving Externally Modulated Lasers, such as Differential Mach-Zender Modulators MZ or ElectroAbsorption Modulators (EAM), without the need of a second modulator

electroabsorption modulator

Abstract: electroabsorption modulator laser diode electroabsorption 741 metal package Electro-absorption modulator
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7989 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Rise Times Less Than 35ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs

electroabsorption 2.5 Gbps

Abstract: nrz optical modulator HL1553
Contextual Info: HL1553 1.55 µm Laser Diode with EA Modulator Description The HL1553 is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as a light source for high-bit-rate, long haul fiberoptic communication systems, such as 2.5

CyOptics DFB

Abstract: LIM400 CyOptics DFB chip CYOPTICS laser cyoptics electroabsorption modulator laser diode cyoptics B007-M43-01-030 JESD625-A DFB ea 10GHZ apogee photonics
Contextual Info: Datasheet LIM400 40Gb/s Transmitter Product Overview Features • • • • • • • • • Enables ITU and MSA Compliance Single Fiber Package 40Gb Electroabsorption Modulator EAM with Integrated Laser Integrated bias eliminates need for external bias-tee

ea-modulator

Abstract: nrz optical modulator
Contextual Info: HL1553 1.55 µm Laser Diode with EA Modulator Description The HL1553 is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as a light source for high-bit-rate, long haul fiberoptic communication systems, such as 2.5 Gbps

NX8565LE541-CC

Abstract: NX8565LE311-CC NX8565LE318-CC NX8565LE326-CC NX8565LE334-CC NX8565LE342-CC NX8565LE350-CC NX8565LE358-CC NX8565LE366-CC NX8565LE-CC
Contextual Info: EA MODULATOR INTEGRATED 1550 nm MQW-DFB LASER DIODE MODULE NX8565LE-CC FOR 2.5 Gb/s DWDM ULTRALONG-REACH 600 km APPLICATIONS FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR The NX8565LE-CC is an Electro-Absorption EA modulator integrated, 1550 nm Multiple Quantum Well (MQW) structured

laser chirp parameter

Abstract: cyoptics CYOPTICS laser LIM400 AC Photonics, modulator JESD625-A laser transmitter 10ghz GR-468-CORE DFB laser drivers GPPO
Contextual Info: Datasheet LIM400 40Gb/s Transmitter Product Overview Features • • • • • • • • • Enables ITU and MSA Compliance Single Fiber Package 40Gb Electroabsorption Modulator EAM with Integrated Laser Integrated bias eliminates need for external bias-tee