E2500 Search Results

E2500

Abstract: E2502 E2505 E2505H54 E2505H55 E2505H56 E2505H57 E2505H58 E2505H59 laser chirp parameter
Contextual Info: Data Sheet August 2001 E2500-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultralong-Reach Applications Applications • SONET/SDH extended-reach applications ■ High-capacity DWDM system applications ■ High-speed data communications

dfb activation energy

Abstract: TN00-008 TN00-012 lucent laser application notes LUCENT E2500 series lucent EML lucent E2500
Contextual Info: Technical Note August 2000 Using Electroabsorptive Modulated Laser Modules in Dense WDM Applications Introduction The information offered here is intended to serve as a guide in the use and optimization of Lucent Technologies’ E2500 series of 2.5 Gbits/s and 10 Gbits/s Electroabsorptive Modulated Isolated Laser Module EM-ILM, or

E2502

Abstract: LUCENT E2500 series Lucent E2502H21 lucent E2500 E2502H50
Contextual Info: Data Sheet September 1998 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations E2500-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultralong-Reach Applications (>600 km) The E2500 EM-ILM, the newest generation of the award-winning 266-Type EM-ILM, features an integrated modulator

Agere E2505

Abstract: E2500 E2502 E2505 E2505H54 E2505H55 E2505H56 E2505H57 E2505H58 E2505H59
Contextual Info: Data Sheet, Rev. 1 September 2001 E2500-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultralong-Reach Applications Applications • SONET/SDH extended-reach applications ■ High-capacity DWDM system applications ■ High-speed data communications

Lucent E2502H21

Abstract: lucent modulator E2505H48 E2505H20 schematic monitor advance 15" electroabsorption modulator
Contextual Info: Advance Data Sheet August 1997 m i c r o e l e c t r o n i c s gr oup Lucent Technologies Bell Labs Innovations E2500-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultralong-Reach Applications (>600 km) The E2500 EM-ILM, featuring an integrated modulator and laser chip, provides a compact, cost-effective solution

E2502

Abstract: E2500 E2505 E2505H52 E2505H54 E2505H55 E2505H57 E2505H58 E2505H59 266-Type
Contextual Info: a " e re AdLib OCR Evaluation Data Sheet, Rev. 1 September 2001 Systems E2500-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultralong-Reach Applications Applications r ag _ . SONET/SDH extended-reach applications . High-capacity DWDM system applications

E2502H50

Contextual Info: Data Sheet September 1998 E2500-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultralong-Reach Applications (>600 km) The E2500 EM-ILM, the newest generation of the award-winning 266-Type EM-ILM, features an integrated modulator

csc 2314

Abstract: E2500VF250 ixys 628 10Z10 m2ka S2000A
Contextual Info: An IXYS Company Provisional Data Data Sheet Issue:- 1  WESTCODE Date:- 26 Jul, 2005 Absolute Maximum Ratings VOLTAGE RATINGS   High Power Sonic FRD Type E2500VF200 & E2500VF250 MAXIMUM LIMITS UNITS Repetitive peak reverse voltage, note 1 2000 - 2500 V

E2502

Abstract: e2500 E2505 E2505H54 E2505H55 E2505H56 E2505H57 E2505H58 E2505H59 266-Type
Contextual Info: Data Sheet, Rev. 1 February 2003 TriQuint Optoelectronics E2500-Type 2.5 Gb/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultralong-Reach Applications Applications TriQu S EM ICON int D UC T OR 2.5 G E b/s L 2500 aser Mod ule • SONET/SDH extended-reach applications

E2566

Abstract: *1H46 lucent comcode
Contextual Info: Advance Data Sheet March 2000 E2560/E2580-Type 10 Gbits/s EML Modules for 2 km—80 km Transmission Features • Integrated electroabsorptive modulator ■ 1.5 µm wavelength ■ Characterized for 10 Gbits/s operation ■ For use up to 80 km at 10 Gbits/s

E2500

Abstract: EM2500 LG1626DXC LM4040 lucent modulator
Contextual Info: Data Sheet February 1999 LG1626DXC Modulator Driver Features Functional Description • High data-rate optical modulator driver ■ Adjustable output voltage up to 3 Vp-p RL = 50 Ω ■ Adjustable modulator dc offset ■ Operation up to 3 Gbits/s ■ Single ended or differential inputs

1365c

Contextual Info: B U R R -B R O W N I INA126 INA2126 1 M/croPOWER INSTRUMENTATION AMPLIFIER Single and Dual Versions FEATURES DESCRIPTION • LOW QUIESCENT CURRENT: 175^A/chan. The INA126 and INA2126 are precision instrumentation amplifiers for accurate, low noise differential signal acquisi­

E4561S

Abstract: E4561 E4561H55 E4561H56 E4561H57 E4561H58 E4561H59 IEC60825-1 10 gb laser diode laser diode 6 GHz
Contextual Info: Data Sheet July 2004 E4561-Type 10 Gb/s EML Modules for up to 80 km 1600 ps/nm Applications Description Tri Qu int OP TO EL CT 10 RO N Gb /s L E456 ICS, IN C. ase 1 rM od u le Features Q Integrated electroabsorptive modulator Q 1.5 µm wavelength Q High output power

chn 720

Abstract: features of ic 7495 pin diagram of ic 7495 E2500 lucent E2500
Contextual Info: Advance Data Sheet January 1999 group Lucent Technologies Bell Labs Innovations E2560/E2580-Type 10 Gbits/s EML Modules Features • Integrated electroabsorptive modulator ■ 1.5 |xm wavelength ■ Characterized for 10 Gbits/s operation ■ For use up to 80 km at 10 Gbits/s

IGCT 4.5kv

Abstract: E2000NC140 E2000NC170 snubber IGCT E1500VF400 IGCT kv 1340 WESTCODE
Contextual Info: HP Sonic-FRDs - EXPANDED PRODUCT BRIEF EXPANDED PRODUCT BRIEF IFAV High Power Sonic-FRDs Fast Recovery Diodes May 2006 Issue 2 Introducing a new class of ultra fast, ultra soft recovery diodes The devices are available from 1.7 kV to 4.5kV in current ratings from 300 A to 2500 A

Contextual Info: DIAMOND F ib er Optic C om ponents E-2000 PS BACKPLANE The E-2000™ PS backplane is a solution fo r backplane systems suitable fo r high pow er applications. It com bines all the advantages of the E-2000™ PS std. connectors, and an optim al guiding mechanism fo r secure backplane connection. When

Contextual Info: Transponder RX antenna< SMD Type: CAS Series> Type: CAS11D21 Product Description 11.6x3.3mm Max. L×W ,2.3mm Max. Height. Operating temperature: 40 85 . Encapsulated core and winding for high mechanical performance Feature LF transponder receiver antenna.

EML Cyoptics

Contextual Info: E2560-Type 10 Gb/s EML Modules for 40 km DWDM Transmission Product Brief Description Features The E2560 EML is designed for 10 Gb/s DWDM transmission applications. It integrates a CW laser with an electroabsorptive modulator in the same semiconductor chip

lucent laser 1550

Abstract: etalon locker GEM 88 DIODE lucent tunable laser diode GEM laser wavelength locker E2532 eml dfb laser diode 1550 lucent 1550 nm
Contextual Info: Advance Data Sheet August 1999 E2530-Type Stabilized, Tunable EML Modules Applications • ■ SONET/SDH extended-reach applications Very dense WDM ≤50 GHz channel spacing extra long-haul and metropolitan applications ■ High-speed data communications

L2322

Contextual Info: m i c r o e l e c t r o n i c s group Data Sheet February 1999 Lucent Technologies Bell Labs Innovations LG1626DXC Modulator Driver Features Functional Description • High data-rate optical modulator driver The LG1626DXC is a gallium-arsenide GaAs inter­

07K300

Abstract: 05K250 lucent technologies Erbium-Doped Fiber Amplifier lucent microelectronics pump laser 980 for APD bias high-voltage DS98-423LWP 1319PC photodiode pin 1319PA Lucent 1319
Contextual Info: Datasheet January 1999 m icr o e le ctro n ic s group Lucent Technologies Bell Labs Innovations 1319-Type High-Speed Lightwave Receiver Features l j|S B • High data rate capability: 2.5 Gbits/s ■ APD or PIN photodetector ■ Fully operational through the 1.3 pm to 1.55 pm

E4560

Abstract: E4560H55 E4560H57 E4560H58 E4560H59 IEC60825-1 10 gb laser diode TriQuint Optoelectronics E4560H49 E4560S
Contextual Info: Data Sheet July 2004 E4560-Type 10 Gb/s EML Modules for up to 40 km 800 ps/nm Applications Description Tri Qu int OP TO EL CT 10 RO N Gb /s L E456 ICS, IN C. ase 0 rM od u le Features Q Integrated electroabsorptive modulator Q 1.5 µm wavelength Q High output power

Contextual Info: DIAMOND F ib er Optic C om ponents E-2000 BACKPLANE Enthusiastic custom ers using the E-2000™ connector system on their equipm ent encouraged the developm ent of the E-2000™ BACKPLANE. It com bines the advantages of the E-2000™ SYSTEM and an optim ale

10 gb laser diode

Abstract: IEC60825-1 wdm laser wavelength drift E3560D195 5161 common anode laser wavelength locker
Contextual Info: Draft Data Sheet March 2005 E3560-Type 10 Gb/s EML Module with a Locker for up to 40 km 800 ps/nm Applications Description Tri Qu int OP TO EL CT 10 RO N Gb /s L E356 ICS, IN C. as 0 er Mo du le Features • Integrated electroabsorptive modulator ■