EIAJ-RRM 16 B Search Results

a473

Abstract: MA020 A-473 ESAC87-009 SC-65 esac87 CC180
Contextual Info: ESAC87-009H6A i Outline Drawings SC H O TTKY B A R R IE R DIODE ^3.2±o ' 15 . 5 maj i 5iC * 13.0 , JU / r" H S f- -2.0 ! T.Zto 1 ' m CD GÌ) 0.5- ' Features JEDEC • te V F EIAJ Low VF SC-65 • x -r Super high speed sw itch in g . • R tt Connection Diagram

Schottky Diode SC-62

Abstract: SE069
Contextual Info: COLLMER SEMICONPUCTOR INC MAE J> 52307^2 S E 0 6 9 o.95A 0QD1754 5fll • C O L _ ^ P 0 3 >- 1 I Outline Drawings SCHO TTKY BA RRIER DIODE 16 MAX. r 0.44 MAX. ■ Features • Surface mount device • Low V F • Super high speed switching.

SE046

Abstract: sin wave to square 15X15 oc sc62
Contextual Info: COLLMER S E M I C O N D U C T O R INC 4flE D 52307^2 D00174fl 2flfl « C O L SE046 o .95 A 'T-oi - u Outline D raw ings SC HO TTK Y BARRIER D IO D E 16 4.6 MAX. m a :K. 18 MAX. 1 tili3» 1) 0.55 MAXJ_J_ 0.44 MAX. . • Features • Surface m ount device •

Collmer SC

Abstract: SE059 Schottky Diode SC-62 Collmer Semiconductor
Contextual Info: COLLMER SEMICONDUCTOR INC MAE ]> 2B3A715 0001751 &7B * C 0 L SE059 1 .OA _ " p 0 3 - \ 3 Outline Drawings SC H O TTK Y BARRIER D IO D E 16 MAX, 4.6 MAX. 18 MAX. PU >i 1— I 0.48 MAX. 0.55 MAXvJ-U 0.44 MAX. 15 L5 3.0 • Features • S urface m o u n t device

1210D1

Abstract: 20FWJ2C48M U20FWJ2C48M
Contextual Info: TOSHIBA 20FWJ2C48M,U20FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2C48M, U20FWJ2C48M SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage : VjrM—0.47V • Repetitive Peak Reverse Voltage

Contextual Info: TOSHIBA 20FWJ2C48M,U20FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2C48M, U20FWJ2C48M SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage : V pM= 0.47V • Repetitive Peak Reverse Voltage

single phase full bridge inverter

Abstract: K2-SS
Contextual Info: SILICON DIFFUSED TYPE RECTIFIER MODULE O THREE PHASE FULL W A V E BRIDGE APPLICATIONS. O INVERTER E Q U IP M EN T FOR AC M O T O R CONTROL. O O 20L6P45 Unit in mm CHOPPER EQ U IPM EN T FOR DC M O T O R CONTROL. 15.510.3 15.5jt0-3 D C SUPPLY FOR BATTERY. O

Contextual Info: TO SH IBA 20FWJ2C48M,U20FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2C48M, U20FWJ2C48M SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage : VjrM —0.47V • Repetitive Peak Reverse Voltage

Contextual Info: TO SH IBA 20FWJ2C48M,U20FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2C48M, U20FWJ2C48M SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage : VjrM —0.47V • Repetitive Peak Reverse Voltage

Contextual Info: ESAD25 C,N,D (15A) (200V to 400V / 15A) Outline drawings, mm FAST RECOVERY DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 1.6 14.5 ±0.2 1 3.0±0.2 15±0.2 1.1 0.5 1.5 5.45 5.45 JEDEC EIAJ Features High voltage by mesa design

T460

Abstract: ESAD25M H150 T151 T930
Contextual Info: ESAD25M C,N,D (15A) IW üH ’î i : Outline Drawings FAST RECOVERY DIODE * Features _0£ Insulated package by fully molding. JEDEC EIAJ High voltage by mesa design. High reliability Connection Diagram : Applications o ESAD25M-DDC ®o— ►! I |4 .-»a

ESAE83-004

Abstract: P460 SC-65 T151 T760
Contextual Info: ESAE83-004 6oa IW H N ii : Outline Drawings » a y | > * - / < i J 7 r S r' f » - K S C H O T T K Y B A R R IE R DIODE ^ 3.2 to. I V 5 *».i 2.0 7.2«# • # £ : Features • <sv, JEDEC EIAJ Low VF SC-65 Super high speed switching. Connection Diagram High reliability by planer design

Contextual Info: T O SH IB A SF10G48,SF10J48,USF10G48,USF10J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10G48, SF10J48, USF10G48, USF10J48 M EDIUM PO W ER CONTROL APPLICATIONS. • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current

Contextual Info: TO SH IB A 20DL2CZ47A,20FL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ47A, 20FL2CZ47A SWITCHING TYPE POWER SUPPLY APPLICATION Unit in mm CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage : V rrm = 200, 300V

Hitachi DSA002748

Contextual Info: HRC0103A Silicon Schottky Barrier Diode for Rectifying ADE-208-624 Z Rev 0 May. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information

MIG20J951H

Contextual Info: TOSHIBA INTEGRATED GTR MODULE MIG20J951H Unit in mm High Power Switching Applications 1S.3Í1.0 15.3 Í 1.0 Motor Control Applications • Integrates Inverter, Converter and Brake Power Circuits in One Package. • Output Inverter Stage : 302OA/6OOV High Speed Type IGBT

DIODE 20FL2C

Contextual Info: TOSHIBA 20DL2C48A,U20DL2C48A,20FL2C48A,U20FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2C48A, U20DL2C48A, 20FL2C48A, U20FL2C48A SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage : V r r m = 200, 300V

Contextual Info: TOSHIBA SG1000GXH26 Unit in mm Inverter Application • Repetitive Peak Off-State Voltage: VDRM = 4500V • R.M.S. On-State Current: h RMS = -<2! 500A • Peak Turn-Off Current: 't g q m = 1 0 0 0 A • Critical Rate of Rise of On-State Current: d i/d t = 600A/JIS

Hitachi DSA0045

Abstract: HRW0702A SC-59A
Contextual Info: HRW0702A Silicon Schottky Barrier Diode for Rectifying ADE-208-109E Z Rev 5 Oct. 1997 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

tlp508

Abstract: JIS-C-5020 JIS C7021 B10 TLP645 JIS-C-5003 JISC5700 TLP573 TLP546G SCR 7704
Contextual Info: 9. Reliability 9.1 General In recent years, as the application fields for photo couplers expand, more discussions are being made on reliability. For reliability improvement, it is insufficient to perform strinct process management and to have reliability tests such as life test and environmental tests. It is necessary to

Hitachi DSA002748

Contextual Info: HRW0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-209E Z Rev 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA001653

Contextual Info: HRC0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-210E Z Rev 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • CMPAK Package is suitable for high density surface mounting and high speed assembly.

hitachi S17

Abstract: HRW0202A SC-59A DSA003641
Contextual Info: HRW0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-209E Z Rev. 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

HRF32

Abstract: Hitachi DSA00358 Hitachi DSA0035
Contextual Info: HRF32 Silicon Schottky Barrier Diode for Rectifying ADE-208-164D Z Rev 4 Jul. 1997 Features • • Good for high-frequency rectify. LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF32 32 LRP Outline 1 32