EIAJ-RRM 16 B Search Results

a473

Abstract: MA020 A-473 ESAC87-009 SC-65 esac87 CC180
Contextual Info: ESAC87-009H6A i Outline Drawings SC H O TTKY B A R R IE R DIODE ^3.2±o ' 15 . 5 maj i 5iC * 13.0 , JU / r" H S f- -2.0 ! T.Zto 1 ' m CD GÌ) 0.5- ' Features JEDEC • te V F EIAJ Low VF SC-65 • x -r Super high speed sw itch in g . • R tt Connection Diagram

Schottky Diode SC-62

Abstract: SE069
Contextual Info: COLLMER SEMICONPUCTOR INC MAE J> 52307^2 S E 0 6 9 o.95A 0QD1754 5fll • C O L _ ^ P 0 3 >- 1 I Outline Drawings SCHO TTKY BA RRIER DIODE 16 MAX. r 0.44 MAX. ■ Features • Surface mount device • Low V F • Super high speed switching.

SE046

Abstract: sin wave to square 15X15 oc sc62
Contextual Info: COLLMER S E M I C O N D U C T O R INC 4flE D 52307^2 D00174fl 2flfl « C O L SE046 o .95 A 'T-oi - u Outline D raw ings SC HO TTK Y BARRIER D IO D E 16 4.6 MAX. m a :K. 18 MAX. 1 tili3» 1) 0.55 MAXJ_J_ 0.44 MAX. . • Features • Surface m ount device •

Collmer SC

Abstract: SE059 Schottky Diode SC-62 Collmer Semiconductor
Contextual Info: COLLMER SEMICONDUCTOR INC MAE ]> 2B3A715 0001751 &7B * C 0 L SE059 1 .OA _ " p 0 3 - \ 3 Outline Drawings SC H O TTK Y BARRIER D IO D E 16 MAX, 4.6 MAX. 18 MAX. PU >i 1— I 0.48 MAX. 0.55 MAXvJ-U 0.44 MAX. 15 L5 3.0 • Features • S urface m o u n t device

a473

Abstract: A472 A-473 ESAC87-009 SC-65
Contextual Info: ESAC87-009H6A i Outline Drawings SCH O TTKY BARRIER DIODE ^3.2±o ' 15 . 5 maj 13.0 , r" i 5iC * H JU -2.0 / ! T.Zto 1 ' S f- m CD GÌ) 0.5- ' Features JEDEC • te V F EIAJ Low VF SC-65 • x -r Super high speed sw itch in g . • R tt Connection Diagram

1s1892

Abstract: toshiba 1s1891 1S1890 1S1891 J120 1s188 1S1885A 1S1886A 1S1887A 251C
Contextual Info: 9 0 9 Z 2 50 T O S H I B A 39C 0222<+ <D I S C R E T E / O P T O STANDARD RECTIFIER 1S1887A T ~ à/ ' f$- D E g ì D Ì T E S D D002ES4 7 f Unii in ; 400V 1.2 A MAXIMUM RATINGS CHARACTERISTIC 1S1885A Repetitive Peak 1S1886A Reverse Voltage 1S1887A Average Forward Current

Contextual Info: TOSHIBA LOW SN UB B ERTYPE SG600GXH26 Unit in mm Inverter Application • Repetitive Peak Off-State Voltage: V DRM = 4 5 0 0 V • R.M.S. O n-State Current: h RMS = • Peak Turn-Off Current: 't g q m = 6 0 0 A • Critical Rate of Rise of O n-State Current:

1210D1

Abstract: 20FWJ2C48M U20FWJ2C48M
Contextual Info: TOSHIBA 20FWJ2C48M,U20FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2C48M, U20FWJ2C48M SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage : VjrM—0.47V • Repetitive Peak Reverse Voltage

Contextual Info: TOSHIBA 20FWJ2C48M,U20FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2C48M, U20FWJ2C48M SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage : V pM= 0.47V • Repetitive Peak Reverse Voltage

CMS04

Abstract: E80-20 C367C 367C
Contextual Info: TOSHIBA CMS04 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS04 Switching Mode Power Supply Applications Portable Equipment Battery Applications U nit.m m Forward voltage: VFM = 0.37 V max Average forward current: Ip (,\y) = 5.0 A Repetitive peak reverse voltage: V rrm = 30 V

Contextual Info: Te Tantalum Capacitor Quick Reference Dimensions mm Part No. Case size W H A case (3216) 3.2 1.6 1.6 B case (3628) 3.5 2.8 1.9 Chip Tantalum Capacitor w /b u ilt-in fuse 1 General purpose 1 L Capacitance range (/¿F; L 1.0—22 TCFG 3 .3 -4 7 Characteristics

single phase full bridge inverter

Abstract: K2-SS
Contextual Info: SILICON DIFFUSED TYPE RECTIFIER MODULE O THREE PHASE FULL W A V E BRIDGE APPLICATIONS. O INVERTER E Q U IP M EN T FOR AC M O T O R CONTROL. O O 20L6P45 Unit in mm CHOPPER EQ U IPM EN T FOR DC M O T O R CONTROL. 15.510.3 15.5jt0-3 D C SUPPLY FOR BATTERY. O

Contextual Info: TO SH IBA 20FWJ2C48M,U20FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2C48M, U20FWJ2C48M SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage : VjrM —0.47V • Repetitive Peak Reverse Voltage

Contextual Info: TO SH IBA 20FWJ2C48M,U20FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2C48M, U20FWJ2C48M SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage : VjrM —0.47V • Repetitive Peak Reverse Voltage

Contextual Info: TOSHIBA 16GWJ2C42 TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 1 6G W J 2 C 4 2 O SWITCHING TYPE PO W ER SUPPLY APPLICATION. O CONVERTER & CHOPPER APPLICATION. Unit in mm 15.9 MAX. 03.2 ±0,2 Average Output Rectified Current : Io = 16A Repetitive Peak Reverse Voltage : V r r ]y[ = 40V

T460

Abstract: ESAD25M H150 T151 T930
Contextual Info: ESAD25M C,N,D (15A) IW üH ’î i : Outline Drawings FAST RECOVERY DIODE * Features _0£ Insulated package by fully molding. JEDEC EIAJ High voltage by mesa design. High reliability Connection Diagram : Applications o ESAD25M-DDC ®o— ►! I |4 .-»a

ne 545 d

Abstract: ESAD92M-02R T1012 esaD92 20H14
Contextual Info: ESAD92M-02R 20A Outline drawings, mm 15.5 ±0.3 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 Features Insulated package by fully molding Low VF Super high speed switching 3.2 +0.3 20 Min 1.6 ±0.3 5.45 ±0.2 ±0.3 21.5 5.5 ±0.2 2.3 ±0.2 2.1±0.3 5.5 ø3.2 ±0.2 9.3 ±0.3

ne 545 d

Abstract: ESAD92M-03R PR 200 20h100
Contextual Info: ESAD92M-03R 20A Outline drawings, mm 15.5 ±0.3 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 Features Insulated package by fully molding Low VF Super high speed switching 3.2 +0.3 20 Min 1.6 ±0.3 5.45 ±0.2 ±0.3 21.5 5.5 ±0.2 2.3 ±0.2 2.1±0.3 5.5 ø3.2 ±0.2 9.3 ±0.3

HRW0202A

Abstract: SC-59A Hitachi DSA00304
Contextual Info: HRW0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-209E Z Rev 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

HRW0202B

Abstract: SC-59A ADE-208-345A
Contextual Info: HRW0202B Silicon Schottky Barrier Diode for Rectifying ADE-208-345A Z Rev 1 Oct. 1997 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

ESAE83-004

Abstract: P460 SC-65 T151 T760
Contextual Info: ESAE83-004 6oa IW H N ii : Outline Drawings » a y | > * - / < i J 7 r S r' f » - K S C H O T T K Y B A R R IE R DIODE ^ 3.2 to. I V 5 *».i 2.0 7.2«# • # £ : Features • <sv, JEDEC EIAJ Low VF SC-65 Super high speed switching. Connection Diagram High reliability by planer design

16GWJ2C42

Abstract: NE 545 TOSHIBA RECTIFIER
Contextual Info: TOSHIBA 16GWJ2C42 TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK 16GWJ2C42 Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. ?S3.2 + 0.2 / • Average Output Rectified Current : Iq = 16A • Repetitive Peak Reverse Voltage : V rrm = 40V

Contextual Info: T O SH IB A SF10G48,SF10J48,USF10G48,USF10J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10G48, SF10J48, USF10G48, USF10J48 M EDIUM PO W ER CONTROL APPLICATIONS. • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current

1600FXD25

Abstract: 1600EXD25
Contextual Info: TOSHIBA 16 0 0 E X D 2 5 J 600FXD25 TOSHIBA ALLOY-FREE RECTIFIER 1600EXD25, 1600FXD25 Unit in mm RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : V rrm —2500~3000V Average Forward Current : Ijr AV = 1600A Flat Package MAXIMUM RATINGS