EIA541 Search Results

AUIRF7303Q

Abstract: auirf7303
Contextual Info: PD - 97654C AUTOMOTIVE GRADE AUIRF7303Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified*

auirf7484q

Abstract: F7484Q AUIRF
Contextual Info: PD - 97757 AUTOMOTIVE GRADE AUIRF7484Q Features l Advanced Planar Technology l Low On-Resistance l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified*

TR-F47

Contextual Info: Tape & Reel Packaging TR-F47 Tape Width, mm 12 Device Cavity Pitch, mm 8 Reel Size, inches 13 Devices per Reel 2000 Mini-Circuits carrier tape materials provide protection from ESD Electro-Static Discharge during handling and transportation. Tapes are static dissipative and comply with industry standards EIA-481/EIA-541.

AN-1114

Abstract: AN1114 EIA-541 FDC37C669 FDC37N769 HSDL-3211 HSDL-3211-021 RH 321.1
Contextual Info: Agilent HSDL-3211 IrDA Data Compliant Low Power 1.15 Mbit/s Infrared Transceiver Data Sheet Features • Fully compliant to IrDA 1.4 physical layer low power specification from from 9.6 kbit/s to 1.152 Mbit/s MIR • Miniature package – Height: 2.5 mm

marking code H1a

Abstract: AUIRLR3105TR AUIRLR3105 12-00-16c
Contextual Info: PD - 97703A AUTOMOTIVE GRADE AUIRLR3105 Features HEXFET Power MOSFET Advanced Planar Technology l Logic-Level Gate Drive l Dynamic dV/dT Rating l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed

GE Refrigerator Compressor

Abstract: 400v 20A ultra fast recovery diode 2245-2
Contextual Info: PD - 97759 IRG7RC10FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 9.0A, TC = 100°C Features • • • • • Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Ultra Fast Soft Recovery Co-pak Diode

IRF7820

Abstract: N mosfet 100v 500A 20V P-Channel Power MOSFET 500A dap6
Contextual Info: IRF7820PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 10V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage

A6T Diode

Abstract: diode A6t Diode GP 641 a6t gd IRFR3710ZPBF a6t 69 marking a6t IRFU3710Z
Contextual Info: PD - 95513C AUTOMOTIVE MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Multiple Package Options Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF

IRF7410g

Abstract: L 117 309 01000
Contextual Info: PD - 96247 IRF7410GPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Halogen-Free VDSS RDS on max ID -12V 7mΩ@VGS = -4.5V -16A 9mΩ@VGS = -2.5V 13mΩ@VGS = -1.8V -13.6A -11.5A

IRFML9244

Abstract: IRLML6344 IRLML2246 irlml0030 irlml2244 IRLML2502PbF
Contextual Info: IRLML2502PbF l l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free RoHS Compliant, Halogen-Free G 1 VDSS = 20V 3 D S RDS(on) = 0.045Ω 2 Description

IRFU4620

Abstract: IRFR4620TRPBF jedec package TO-252AA
Contextual Info: PD -96207A IRFR4620PbF IRFU4620PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D VDSS RDS on typ. max. ID G

FET MARKING QG

Abstract: 10BQ040 IRF7811W
Contextual Info: PD-94031D IRF7811W HEXFET Power MOSFET for DC-DC Converters • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses 100% Tested for RG Description This new device employs advanced HEXFET Power

IRLML0060TR

Abstract: IRLML0060TRPBF
Contextual Info: PD - 97439A IRLML0060TRPbF HEXFET Power MOSFET VDS 60 V VGS Max ± 16 V RDS on max 92 m 116 m (@VGS = 10V) RDS(on) max (@VGS = 4.5V) *   ' 6  Micro3TM (SOT-23) IRLML0060TRPbF Application(s) •Load/ System Switch Features and Benefits Benefits

IRLML5103PBF

Abstract: IRLML2246 irlml2030
Contextual Info: IRLML5103PbF l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free RoHS Compliant, Halogen-Free HEXFET Power MOSFET G 1 VDSS = -30V 3 D

314P

Abstract: EIA-541 FL014 IRFL014
Contextual Info: PD - 95316 IRFL1006PbF HEXFET Power MOSFET Surface Mount Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 60V RDS on = 0.22Ω G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 96058 IRLR7843CPbF IRLU7843CPbF HEXFET Power MOSFET Applications l l l High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free

2CJQJ

Abstract: sot223 device Marking 20CJQ100 40HF EIA-541 P460
Contextual Info: Bulletin PD-20480 rev. H 07/06 20CJQ100 SCHOTTKY RECTIFIER 2 Amp IF AV = 2 Amp VR = 100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 2.0 A VRRM 100 V IFSM @ tp = 5 s sine 380 A VF 0.67 V waveform

EIA-541

Abstract: IRFR120 IRFU120 U120 rectifier diode assembly irf p channel
Contextual Info: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free Document Number: 91268 12/9/04 www.vishay.com 1 IRFR/U210PbF Document Number: 91268 www.vishay.com 2 IRFR/U210PbF Document Number: 91268 www.vishay.com 3 IRFR/U210PbF Document Number: 91268 www.vishay.com 4 IRFR/U210PbF

EIA-541

Abstract: IRF7702 4.5v to 100v input regulator
Contextual Info: PD-96016 IRF7752PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel Lead-Free VDSS 30V RDS(on) max ID 0.030@VGS = 10V 4.6A 0.036@VGS = 4.5V 3.9A Description

AN-994

Abstract: IRFR120 IRFU120 IRLR024N IRLU024N U120 U014
Contextual Info: PD - 95551A IRLR/U014NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A S Description

U8113

Abstract: ir*811 IRFR120 IRFU120 IRLR8113 IRLU8113
Contextual Info: PD - 94621 IRLR8113 IRLU8113 HEXFET Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use VDSS RDS on max

20cjq030

Abstract: EIA-541
Contextual Info: Bulletin PD - 20477 rev. C 06/01 20CJQ030 SCHOTTKY RECTIFIER 2 Amp Major Ratings and Characteristics Characteristics IF AV Rectangular waveform Desciption / Features 20CJQ030 Units 2.0 A V RRM 30 V IFSM @ tp = 5 µs sine 400 A VF @ 1.0Apk, TJ = 125°C ( Per Leg )

IRFR120

Abstract: IRFR3707Z IRFU120 IRFU3707Z
Contextual Info: PD - 94648 IRFR3707Z IRFU3707Z Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use HEXFET Power MOSFET VDSS RDS on max

smd fl014

Abstract: FL014 FL014 Example transistor SMD FL014 EIA-541 IRFL014 IRFL4310 838 infra red i*l014 MARKING 93 SOT-223
Contextual Info: PD - 91368B IRFL4310 HEXFET Power MOSFET D l l l l l l Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance VDSS = 100V RDS on = 0.20W G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier