DAP6 Search Results

BI10R-W30-DAP6X-H1141

Abstract: inductive proximity sensor pot core BN 54-01
Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor ring sensor Bi10R-W30-DAP6X-H1141

Contextual Info: Inductive sensor ring sensor BI20R-W30-DAP6X-H1141 • Rectangular, height 30 mm ■ Plastic, PA12-GF30 ■ Pulse duration 100 ms ■ Sensitivity adjusted via potentiometer ■ DC 3-wire, 10…30 VDC ■ Dynamic output performance ■ NO contact, PNP output

BI20R-W30-DAP6X-H1141

Abstract: DIN 5401 W3060 DIN 912
Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor ring sensor Bi20R-W30-DAP6X-H1141

10A30VDC

Contextual Info: Inductive sensor ring sensor BI6R-W30-DAP6X-H1141 • Rectangular, height 30 mm ■ Plastic, PA12-GF30 ■ Pulse duration 100 ms ■ Sensitivity adjusted via potentiometer ■ DC 3-wire, 10…30 VDC ■ Dynamic output performance ■ NO contact, PNP output

dap6

Abstract: BI6R-W30-DAP6X-H1141 DIN 5401
Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor ring sensor Bi6R-W30-DAP6X-H1141

Contextual Info: Inductive sensor ring sensor BI30R-W30-DAP6X-H1141 • Rectangular, height 30 mm ■ Plastic, PA12-GF30 ■ Pulse duration 100 ms ■ Sensitivity adjusted via potentiometer ■ DC 3-wire, 10…30 VDC ■ Dynamic output performance ■ NO contact, PNP output

DAN601

Abstract: DAP601
Contextual Info: DAN601 / DAP601 200 mW DAN601 / DAP601 (200 mW) Small Signal Diode Arrays Diodensätze mit Allzweckdioden Version 2008-04-15 Nominal power dissipation Nenn-Verlustleistung 3.5±0.2 18±0.2 Repetitive peak reverse voltage Periodische Spitzensperrspannung

DAN803

Abstract: DAN403 DAP801 DAN401 DAP8 DAP401 DAN801
Contextual Info: $ -f DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 K/'Diodes DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 X hf i l *• > 7 Jls -f \S- i-M v 'J à > ? -f * - K 7 K Epitaxial Planar Silicon Diode Arrays iìiliìlU f

Contextual Info: Inductive sensor ring sensor BI15R-W30-DAP6X-H1141 • Rectangular, height 30 mm ■ Plastic, PA12-GF30 ■ Pulse duration 100 ms ■ Sensitivity adjusted via potentiometer ■ DC 3-wire, 10…30 VDC ■ Dynamic output performance ■ NO contact, PNP output

Contextual Info: DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 K /D iod es DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 v V =i > 1 $ 3- V T ; u7 °U - j- M M & JS* < "J 3- > ? 2 '< * - KT7 K Silicon Epitaxial Planar Ultra-High Speed Switching Diode Arrays

DAN801

Abstract: AP401 DAN403 rohm dan403
Contextual Info: DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 $ -4 ^ — K /D io d es DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 t — K 7 K Epitaxial Planar Silicon Diode Arrays ilS ilS jiy x ^ 'i "J •^■>‘^ffl/Ultra-High-Speed Switching

DAN601

Abstract: dap401
Contextual Info: DAN401 DAN403 DAN601 DAN801 DAN803 DAP401 DAP601 DAP801 DAP803 Diode, array, high-speed switching, leaded Dimensions Units : mm In these single chips, there are multiple diodes as shown in the circuit diagrams. All diodes are in multi-pin molded packages.

Contextual Info: DAN601 / DAP601 200 mW Small Signal Diode Arrays Dioden Sätze mit Allzweckdioden Version 2004-10-01 Nominal power dissipation Nenn-Verlustleistung 6.6 ±0.2 18±0.2 3.5±0.2 Repetitive peak reverse voltage Periodische Spitzensperrspannung Type Typ 7 Pin-Plastic case

BI30R-W30-DAP6X-H1141

Abstract: dap6 DIN 5401 3 wire PNP inductive proximity sensor
Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor ring sensor Bi30R-W30-DAP6X-H1141

DAP801

Abstract: DAN401 DAN403 DAN801 DAN803 DAN601 DAP401 DAP601 DAP803
Contextual Info: DAN401 DAN403 DAN601 DAN801 DAN803 DAP401 DAP601 DAP801 DAP803 Diode, array, high-speed switching, leaded Dimensions Units : mm In these single chips, there are multiple diodes as shown in the circuit diagrams. All diodes are in multi-pin molded packages.

sony sub woofer circuits diagrams

Abstract: RBS 6500 product sony sub woofer CIRCUIT diagram
Contextual Info: TM TAS5028 8 Channel Digital Audio PWM Processor Data Manual 2004 DAV-Digital Audio/Speaker SLES112 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

FSA2510

Abstract: FSA2619 FSA2620 tnd903
Contextual Info: DIODE ARRAYS PACKAGES AND CIRCUITS 14 6 1 7 D IP1-7 D IP 1-8 1 2 3 1 2 DAN215 4 - 8 700 - ^ < 4— 0.400 — ^ 0.400 — ^ A A ♦ 0.295 m ax A A 0.295 DAN401 YYYm t' 0055 _14 Places N ote 1 T T _ o 100 0.020 Dia n 0.300 Typ ' Note 1: DIP sockets have 0.020” diameter solder tail. Brass

DAP11

Contextual Info: 19-0517; Rev 0; 6/06 KIT ATION EVALU E L B AVAILA 12-Bit, 2.3Gsps, Multi-Nyquist DAC with Selectable Frequency Response Applications Radar Waveform and LO Signal Synthesis Digital IF Generation in X-Band Transmitters Arbitrary Waveform Generators Direct Digital Synthesis

Contextual Info: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E 3 TM (Emulated EEPROM)

1SS309

Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
Contextual Info: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)

S3H-02

Abstract: S19C s3vc0 S2LA20 s3h 02 S1K20H S1K40 S6K20 S2K20H S2K40
Contextual Info: -71 S1K20H S1K40 S2K20 S2K20H S2K40 S2L20U S2L40 S2L40 S2L60 S2LA20 S2V20 S2V60 S3H-02 S3K40 S3L20U S3L40 S3L60 S3LA20 S3V20 S3V60 S6K20 S6K20H S6K20R S6K40 S6K40R S16L60 S19C S19D S19E S19G S19J S19L S20C S20D S20E S20G S20J S20L S20L60 S30L40 S3QL60 S51A

DHA20

Abstract: DHB08 DHB12 DHB14 DHB16 506G
Contextual Info: — 329 — [21442 -4.30 M A X - — 3 .2 0M A X - 3.00_ N o .3 - 4 8 -U N C -2 A 1.57 0 d: 0.1 — 2 .0 4 0 -0 .1 — i @ 446 121445 0447 2 .8 + 0 .2 -1 7 .0 1 0 .2 - 1 2 3 4 5 6 7 fîflîî! fîïTfï} 1.2 5 2.54 1 (2) (3) (4) (5) (6) (7)

1SS309

Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 DA6PC
Contextual Info: 17 4 - - nï m it « s fe aï V r rm Vr V (V) (fliA) 80 80 300 300 Io ,If* I fm <°C) (nA) I fsm cc> (A) 1SS308 1SS309 DA-3N DA-3P DA-4N * ') *s y * y -y y 85 85 35 35 35 DA-4P DA-6NC DA-6PC DA-8N DA-8P * * * * * y y y •) ') V y y * y î? y & y 35 35 35

628B

Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
Contextual Info: - 1 74 - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)