EI CORE 105 Search Results

pc40 core

Abstract: PC40 ferrite Ferrite Core PC40 ferrite pc40 PC40 EI70-Z EC120-Z Ee70 core pc40 "EI CORE" EE 20 bobbin
Contextual Info: Ferrite Cores T, UU, EC, EIC, PQ, EE, EI, DT, SP Series For High Power High Power Cores FEATURES • Large size ferrite cores developed for reactors and transformers used in high power units. • Please contact us for machinability of non-standard special

Pulse JW0A1P01R-E

Abstract: LU82540EP H5007 JW0A2P019D GHW Connectors 82540EP JW0A1P01R-E GD82541GI 82541EI 82541 Pulse bob smith termination
Contextual Info: 82540EP/82541 PI/GI/EI & 82562EZ(EX) Dual Footprint Design Guide Application Note Networking Silicon 317506-001 Revision 2.9 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

2N3904 TRANSISTOR using darlington amplifier

Abstract: tuned amplifier ML1490 T376 mc1490 ML1350 2N3904 2N3906 MC1490P ML1490PP
Contextual Info: ML1490 RF/IF/Audio Amplifier Wideband Amplifier With AGC Legacy Device: Motorola MC1490 The ML1490 is an integrated circuit featuring wide–range AGC for use in RF/IF amplifiers and audio amplifiers. 8 • High Power Gain: 50 dB Typ at 10 MHz 45 dB Typ at 60 MHz

910kHz

Abstract: MC1490P ML1490 ML1350 2N3904 2N3906 MC1490 ML1490PP MC14-9
Contextual Info: ML1490 RF/IF/Audio Amplifier Wideband Amplifier With AGC Legacy Device: Motorola MC1490 The ML1490 is an integrated circuit featuring wide–range AGC for use in RF/IF amplifiers and audio amplifiers. 8 • High Power Gain: 50 dB Typ at 10 MHz 45 dB Typ at 60 MHz

Contextual Info: ML1490 RF/IF/Audio Amplifier Wideband Amplifier With AGC Legacy Device: Motorola MC1490 The ML1490 is an integrated circuit featuring wide–range AGC for use in RF/IF amplifiers and audio amplifiers. 8 • High Power Gain: 50 dB Typ at 10 MHz 45 dB Typ at 60 MHz

PowerPC 970

Abstract: powerpc 750 dhrystone ppc970 PowerPC 750 DMIPS powerpc dhrystone dmips ibm PPC 750 ppc 750fx PPC750CXe powerpc dhrystone PowerPC 750FX
Contextual Info: TM PowerPC 970: First in a new family of 64-bit high performance PowerPC processors Peter Sandon Senior PowerPC Processor Architect IBM Microelectronics All information in these materials is subject to change without notice. All information is provided on an “as is” basis, without any warranty of any kind.

T44A

Contextual Info: Order this document by MC1490/D MC1490 RF/IF/Audio Amplifier The MC1490 is an integrated circuit featuring wide–range AGC for use in RF/IF amplifiers and audio amplifiers over the temperature range, –40° to +85°C. • High Power Gain: 50 dB Typ at 10 MHz

Contextual Info: EE14/7, EE18/8, EE22/11, EE32/13, EE38/16, EE43/19, EE64/21 EI 14/5, EI 18/6, EI 22/7, EI 32/10, E 64/15 ER9.5, ER11, ER14.5 Planar EE and EI cores, with their low profile are suitable for board level installation allowing assembly without the need for plastic coilformers and can also allow windings integrated into multi-level PCBs. Planar ER cores with their low mass and

RADOX CABLE 125

Abstract: RADOX 125 1.5 MM2 siemens standard bogie RADOX 125 1.5 MM SMA-50-3-55/199 11_SMA-50-3-55/199_NE RADOX CABLE
Contextual Info: Railway products Edition 2014 Bridging our technologies Interdisciplinary knowledge The HUBER+SUHNER Group is a leading international manufacturer of electrical and optical interconnectivity components and systems. Our main markets are communication, transport and industry. Under one roof, we combine

ups transformer winding formula

Abstract: ferrite ei core n27 Epcos E core N87 20/10/6 N30 transformer core Epcos N87 ei 28 Epcos N30 toroids pulse transformer Epcos N87 ferrite N27 transformer core ETD ferrite core push-pull transformer construction ferrite n41
Contextual Info: Ferrites and accessories Application notes Date: September 2006 Data Sheet  EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited. Application notes

transformer EI lamination

Contextual Info: Monterrey, Mexico Houston, Texas Salem, India Ningbo, China Shanghai, China AIC AMVECO. Making a World of Difference in Toroidal Transformers. AMVECO Magnetics, Inc. • 11222 Richmond Ave. • Suite 120 • Houston, TX 77082 • (800) 527-7042 • (713) 977-2500 • Fax: (713) 977-5031

Fair-Rite

Contextual Info: Fair-Rite Products Corp. Your Signal Solution Power/Inductive Materials and Components Fair-Rite Products Corp. www.fair-rite.com Phone: 888-FAIRRITE 324-7748 /845-895-2055 • Fax: 888-FERRITE (337-7483)/845-895-2629 P.O. Box 288, One Commercial Row, Wallkill, NY 12589-0288 • E-mail: ferrites@fair-rite.com

RADOX POWER CABLE

Abstract: RADOX 125 1.5 MM2 radox 125 current
Contextual Info: Railway products Edition 2013 Bridging our technologies Interdisciplinary knowledge The HUBER+SUHNER Group is a leading international manufacturer of electrical and optical interconnectivity components and systems. Our main markets are communication, transport and industry. Under one roof, we combine

DDR2-533

Abstract: DDR2-667
Contextual Info: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AHFD Specifications Features • Density: 512MB • Organization  64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line

DDR2-533

Abstract: DDR2-667 E0931E20
Contextual Info: PRELIMINARY DATA SHEET 4GB Fully Buffered DIMM EBE41FE4ABHD Specifications Features • Density: 4GB • Organization  512M words x 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM with sFBGA • Package  240-pin fully buffered, socket type dual in line

SSC E 81

Abstract: DDR2-533 DDR2-667 EBE21FD4AHFD
Contextual Info: PRELIMINARY DATA SHEET 2GB Fully Buffered DIMM EBE21FD4AHFD Specifications Features • Density: 2GB • Organization  256M words x 72 bits, 2 ranks • Mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line

DDR2-667

Abstract: EDE5104AJSE EBE21FD4AJFT-6E-E
Contextual Info: PRELIMINARY DATA SHEET 2GB Fully Buffered DIMM EBE21FD4AJFT Specifications Features • Density: 2GB • Organization ⎯ 256M words x 72 bits, 2 ranks • Mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package ⎯ 240-pin fully buffered, socket type dual in line

Contextual Info: Product Specifications PART NO: REV: 1.2 VL395T2953-E6/D5 General Information 1GB 128Mx72 DDR2 SDRAM FULLY BUFFERED ECC 240 PIN DIMM FBDIMM Description: The VL395T2953 is a 128M X 72 DDR2 SDRAM high density Fully Buffered DIMM(FBDIMM). This memory module consists of eighteen CMOS 64MX8 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages,

Contextual Info: 3URGXFW 6SHFLILFDWLRQV PART NO: 5 9  9/7$(' *HQHUDO ,QIRUPDWLRQ *% 0[ ''5 6'5$0 8//< %8)(5(' ',00 )%',00 (&&  3,1 'HVFULSWLRQ The VL395T5160A is a 512M X 72 DDR2 SDRAM high density Fully Buffered DIMM(FBDIMM). This memory module consists of thirty-six CMOS 256MX4 bit with 8 banks DDR2 Synchronous DRAMs in BGA packages,

DDR2-667

Contextual Info: PRELIMINARY DATA SHEET 4GB Fully Buffered DIMM EBE41FE4ACFT Specifications Features • Density: 4GB • Organization ⎯ 512M words x 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package ⎯ 240-pin fully buffered, socket type dual in line

DDR2-667

Abstract: EDE5108AJSE-6E-E E1088E20
Contextual Info: PRELIMINARY DATA SHEET 1GB Fully Buffered DIMM EBE11FD8AJFT Specifications Features • Density: 1GB • Organization  128M words x 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line

e1007

Abstract: EBE11FD8AHFD-6E-E DDR2-533 DDR2-667
Contextual Info: PRELIMINARY DATA SHEET 1GB Fully Buffered DIMM EBE11FD8AHFD Specifications Features • Density: 1GB • Organization  128M words x 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line

EE 16 bobbin v

Abstract: EE 13 type bobbin EI 16 bobbin TYCO PBT 124LMH2
Contextual Info: 3 4 1 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST HB R E V IS IO N S P LTR 01 A B D NOTES: 1 .LOT NO.SYSTEM AS FOLLOWING: DESCRIPTION ADD P/N MODIFY VENT HOLE&ADD NOTE CHANGE TE LOGO&DATE CODE

PC2-5300J-555-10-C

Abstract: trace code micron label
Contextual Info: Preliminary‡ 240-Pin 4GB DDR2 SDRAM FBDIMM DR, FB, x72 Features DDR2 SDRAM FBDIMM MT36HTS51272F – 4GB For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • 240-pin DDR2 fully buffered, dual in-line memory module (FBDIMM) with ECC to detect and report