marking code s2a SOT23
Abstract: smbt3906 MMBT3906 infineon
Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E
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smbt3906/mmbt3906smbt3904/mmbt3904+4vps05161marking code s2a sot23smbt3906mmbt3906 infineon
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SMBT3906U
Contextual Info: SMBT3906U PNP Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA 5 4 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 3 2 Complementary type: SMBT3904U (NPN)
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smbt3906u100masmbt3904uvpw09197+4eha07175ehp00773ehp00764jul-11-2001
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ic power 22E
Abstract: H12E h11E SMBT3906U 1N916 SC74 SMBT3904U EHP00768
Contextual Info: SMBT3906U PNP Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA 5 4 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 3 2 Complementary type: SMBT3904U (NPN)
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smbt3906u100masmbt3904uvpw09197+10eha07175ehp00773ehp00764nov-30-2001ic power 22eh12eh11e1n916sc74ehp00768
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SMBT3906S
Abstract: TRANSISTOR SMBT3906S 1N916 SMBT3904S VPS05604 H12E ic power 22E EHP00768
Contextual Info: SMBT3906S PNP Silicon Switching Transistor Array 4 High DC current gain: 0.1mA to 100mA 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package Complementary type: SMBT3904S (NPN)
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smbt3906s100masmbt3904svps05604+10eha07175ot363ehp00773ehp00764nov-30-2001transistor smbt3906s1n916h12eic power 22eehp00768
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Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E
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smbt3906/mmbt3906smbt3904/mmbt3904+1vps05161
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Q62702-A1202
Abstract: SMBT 3904S 1N916 3904S VPS05604
Contextual Info: SMBT 3906S PNP Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)
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3906s100ma3904svps05604+7ot-363q62702-a1202ehp00773ehp00764sep-07-1998smbt 3904s1n916
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power 22E
Abstract: TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A
Contextual Info: SMBT3906 PNP Silicon Switching Transistor 3 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings
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smbt3906smbt3904vps05161ehp00773+11ehp00768aug-20-2001ehp00769power 22etransistor s2as2a sot231n916h12esot23 transistor marking 12eic marking ns-05marking s2a
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H12E
Abstract: SMBT3906U
Contextual Info: SMBT3906U PNP Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA 5 4 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 3 2 Complementary type: SMBT3904U (NPN)
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smbt3906u100masmbt3904uvpw09197+2eha07175h12e
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power 22E
Abstract: TRANSISTOR S2A SMBT3906 1N916 SMBT3904
Contextual Info: SMBT3906 PNP Silicon Switching Transistor 3 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings
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smbt3906smbt3904vps05161ehp00773+6ehp00768nov-30-2001ehp00769power 22etransistor s2a1n916
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SMBT3906U
Contextual Info: SMBT3906U PNP Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA 5 4 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 3 2 Complementary type: SMBT3904U (NPN)
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smbt3906u100masmbt3904uvpw09197+1eha07175
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ic power 22E
Abstract: 1N916
Contextual Info: SMBT 3906U PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3904U (NPN)
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3906u100ma3904uvpw09197+7eha07175sc-74ehp00773ehp00764oct-14-1999ic power 22e1n916
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3906
Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E
Contextual Info: SMBT 3906 PNP Silicon Switching Transistor 3 High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Complementary type: SMBT 3904 NPN 2 1 Type Marking SMBT 3906 s2A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings
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100mavps05161ot-23ehp00772+11ehp00773oct-14-1999ehp00768ehp007693906transistor 3906k0300h12e1n9163906 pnpic power 22e
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ic power 22E
Abstract: SMBT 3904S 1N916 3904S VPS05604
Contextual Info: SMBT 3906S PNP Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package • Complementary type: SMBT 3904S (NPN)
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3906s100ma3904svps05604+8eha07175ot-363ehp00773ehp00764jan-26-1998ic power 22esmbt 3904s1n916
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MMBT3906
Abstract: SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904
Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E
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smbt3906/mmbt3906smbt3904/mmbt3904+9vps05161ehp00771ehp00768jul-28-2003smbt3906ehp00772transistor s2a1n916smbt3904
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