transistor marking BMs
Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1 Noise figure NF = 2.2 dB at 1.8 GHz
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bga42725-technologievps05605eha07378+2ot343transistor marking bms
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INFINEON marking BGA
Abstract: BGA427 TRANSISTOR BI 185 BGA420
Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable • 2 4 Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S 21| 2 = 22 dB at 1.8 GHz (Appl.2) 1 IP 3out = +7 dBm at 1.8 GHz (V D=3V, I D=9.4mA)
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bga42725-technologieeha07378ot343+3infineon marking bgatransistor bi 185bga420
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T 427 transistor
Abstract: Q62702-G0067 transistor K 1352 marking r4 SOT343 95M-A BMS 13-81
Contextual Info: BGA 427 Si-MMIC-Amplifier in SIEGET 25-Technologie Preliminary data 3 • Cascadable 50 Ω-gain block 4 • Unconditionally stable • Gain |S21 |2 = 18,5 dB at 1.8 GHz appl.1 gain |S21 |2 = 22 dB at 1.8 GHz (appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID=9.4mA)
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25-technologievps05605eha07378q62702-g0067+6ot-343t 427 transistortransistor k 1352marking r4 sot34395m-abms 13-81
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marking r4 SOT343
Abstract: BGA427
Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1 Noise figure NF = 2.2 dB at 1.8 GHz
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bga42725-technologievps05605eha07378+3ot343aug-02-2001marking r4 sot343
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marking r4 SOT343
Abstract: marking bms
Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable • 2 4 Gain |S 21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 1 IP 3out = +7 dBm at 1.8 GHz (V D=3V, I D=9.4mA)
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bga42725-technologieeha07378marking r4 sot343+1marking bms
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BGA427
Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable • 2 4 Gain |S 21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 1 IP 3out = +7 dBm at 1.8 GHz (V D=3V, I D=9.4mA)
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marking r4 SOT343
Abstract: bo 139 INFINEON marking BGA BGA420 BGA427 E6327 nf 948
Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1 Noise figure NF = 2.2 dB at 1.8 GHz
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bga42725-technologievps05605eha07378+7ot343marking r4 sot343bo 139infineon marking bgabga420e6327nf 948
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transistor marking BMs
Abstract: nf 948 95M-A
Contextual Info: BGA 427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Preliminary data Cascadable 50 -gain block 4 Unconditionally stable Gain |S21 |2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21 |2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID=9.4mA)
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25-technologievps05605eha07378ot-343+4nov-05-1999transistor marking bmsnf 94895m-a
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