EGN26 Search Results

EGN26A180IV

Abstract: Eudyna Devices EGN26A180
Contextual Info: Eudyna GaN-HEMT 180W Preliminary ES/EGN26A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability

EGN26C070I2D

Contextual Info: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater

EGN26C210I2D

Abstract: 60Ghz 60GHz transistor EGN26
Contextual Info: EGN26C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ Psat ・High Efficiency: 62%(typ.) @ Psat ・Power Gain : 16dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

MTTF

Abstract: 60Ghz GaN amplifier 160W JESD22-A114 EGN26C160I2D
Contextual Info: EGN26C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 52.5dBm typ. @ Psat ・High Efficiency: 65%(typ.) @ Psat ・Power Gain : 16dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

105w

Abstract: EGN26C105I2D 60Ghz 60GHz transistor
Contextual Info: EGN26C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.3dBm typ. @ Psat ・High Efficiency: 68%(typ.) @ Psat ・Power Gain : 17dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

EGN26C030MK

Abstract: 60Ghz JESD22-A114
Contextual Info: EGN26C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN26C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ Psat ・High Efficiency: 62%(typ.) @ Psat ・Power Gain : 16dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

EGN26C030MK

Contextual Info: EGN26C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

EGN26A090IV

Abstract: EUDYNA EGN26A090
Contextual Info: Eudyna GaN-HEMT 90W Preliminary ES/EGN26A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability

GaN amplifier

Abstract: EUDYNA
Contextual Info: Eudyna GaN-HEMT 30W Preliminary ES/EGN26A030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15.0dB(typ.) @ f=2.6GHz ・Proven Reliability

6-10 Ghz RF Power 100w amplifier

Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
Contextual Info: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN26C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

2S110

Abstract: GRM188B11H102KA01D
Contextual Info: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN26C070MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 60%(typ.) @ Psat Power Gain : 16.5dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN26C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 43.5dBm typ. @ Psat Power Gain : 18dB(typ.) @ f=2.60GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN26C160I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain : 16dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN26C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 52.5dBm typ. @ Psat ・High Efficiency: 65%(typ.) @ Psat ・Power Gain : 16dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

CR20EY

Abstract: CM16VE CM16VG CM16VJ CN16VC CN16VE CN16VG CN16VJ EGN24-06 EGN24-08
Contextual Info: - 66 - s 35 £ tt « vrsh V CM 16 VE CM16VG CM16VJ CN16VC C N 16VE CN16VG CN16VJ EGN24-06 EGN24-08 EGN26-08 EGP26-13A EGP26-13B CRlOCY-iO CR IO C Y — 12 CR10CY-2 CR10CY-4 C RIOCY— 6 C RIOCY— 8 C R20EY— 10 C R20EY— 12 CR20EY-14 C R20EY— 16 CR20EY-2

Contextual Info: EGN26C210I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.0dBm typ. @ Psat High Efficiency: 62%(typ.) @ Psat Power Gain : 16dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN26C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 45.0dBm typ. @ Psat Power Gain : 18dB(typ.) @ f=2.60GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

60Ghz

Abstract: JESD22-A114 egn26c020mk
Contextual Info: EGN26C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN26C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.3dBm typ. @ Psat ・High Efficiency: 68%(typ.) @ Psat ・Power Gain : 17dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

CM16VE

Abstract: CM16VG CM16VJ CN16VC CN16VE CN16VG CN16VJ EGN24-06 EGN24-08 CR20EY16
Contextual Info: - « n Vt h Vs d VST V (mA) Tc c o 1.80 1. 80 1. 80 1. 90 1. 90 25# 25# 25# 25# 25# 470 470 470 220 220 3. 0 3.0 3.0 3. 0 3.0 150.00 150.00 150.00 150.00 150.00 25 25 25 25 25 0. 0. 0. 0. 0. 1. 90 1. 90 1. 80 1. 80 1. 95 25# 25# 25 25 25 220 220 750 750

induction furnace

Abstract: high speed thyristor 2X10 EGN26 X103
Contextual Info: E G N 2 6 <4 0 0 a / * £ I O u tlin e d ra w in g s Units mm HIGH SPEED THYRISTOR Features • Short turn-off time "7 9 4 • B fi# * 7 ^J!±.h£.$ dv/dt)a,r* # i ' Large dv/dt : Applications • CVCF>f>'/<—^ • CVCF inverters High frequency induction furnace