EEPROM RETENTION TESTING Search Results

EEPROM 28C256

Abstract: 7b9729 1C0302 28C040 28C256 82307 28C256 atmel 4b23 6D9708 6C9638
Contextual Info: PAGE 1 OF 10 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C256 CMOS EEPROM RELIABILITY DATA -150°C DYNAMIC OPERATING LIFE TEST -CYCLE TEST -200°C RETENTION BAKE -125°C DYNAMIC OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC)

AN-1009

Abstract: C1995 CS100 CS160 NM93C46 NM93C46N
Contextual Info: ENDURANCE The number of write erase cycles an EEPROM can withstand before a bit in the memory fails RETENTION The length of time an EEPROM can reliably retain data after programming There are no formal industry standards for determining the techniques or the parameters of endurance claims found in

CS160

Abstract: AN-1009 C1996 CS100 NM93C46 NM93C46N AN-1009 national
Contextual Info: ENDURANCE The number of write erase cycles an EEPROM can withstand before a bit in the memory fails RETENTION The length of time an EEPROM can reliably retain data after programming There are no formal industry standards for determining the techniques or the parameters of endurance claims found in

M24C16

Contextual Info: SGS-THOMSON . llIlMJilLIlMWDÊi M24C16, M24C08 M24C04, M24C02, M24C01 16K/8K/4K/2K/1K SERIAL l2C BUS EEPROM PRODUCT PREVIEW TWO WIRE l2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 2ms TYPICAL PROGRAMMING TIME

ST24FC21

Abstract: ST24FW21 ST24LC21B ST24LW21
Contextual Info: ST24LC21B, ST24LW21 ST24FC21, ST24FW21 1Kb x8 DUAL MODE SERIAL EEPROM for VESA PLUG & PLAY 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 3.6V to 5.5V SINGLE SUPPLY VOLTAGE HARDWARE WRITE CONTROL (ST24LW21 and ST24FW21) TTL SCHMITT-TRIGGER on VCLK INPUT

Contextual Info: ST24E32 ST25E32 SERIAL EXTENDED ADDRESSING COMPATIBLE WITH I2C BUS 32K 4K x 8 EEPROM COMPATIBLE with I2C EXTENDED ADDRESSING TWO WIRE SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES, OVER the FULL SUPPLY VOLTAGE RANGE 40 YEARS DATA RETENTION

FM18L08-70-SG

Abstract: FM18L08 FM18L08-70-P FM18L08-70-S FM18L08-70-TG FM18L08-70 FM18L08-70-PG
Contextual Info: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 45 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process SRAM & EEPROM Compatible

AN404

Abstract: ST24E16 ST25E16
Contextual Info: ST24E16 ST25E16 16 Kbit Serial I2C EEPROM with Extended Addressing COMPATIBLE with I2C EXTENDED ADDRESSING TWO WIRE SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES, OVER the FULL SUPPLY VOLTAGE RANGE 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE

VGA Cable pin

Abstract: 4fc21 ST24FC21 ST24FC21B ST24FW21 ST24LC21B ST24LW21
Contextual Info: ST24LC21B, ST24LW21 ST24FC21, ST24FC21B, ST24FW21 1 Kbit x8 Dual Mode Serial EEPROM for VESA PLUG & PLAY 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 3.6V to 5.5V or 2.5V to 5.5V SINGLE SUPPLY VOLTAGE HARDWARE WRITE CONTROL (ST24LW21 and ST24FW21)

4FC21

Abstract: ST24FC21 ST24FC21B ST24FW21 ST24LC21B ST24LW21
Contextual Info: ST24LC21B, ST24LW21 ST24FC21, ST24FC21B, ST24FW21 1 Kbit x8 Dual Mode Serial EEPROM for VESA PLUG & PLAY 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 3.6V to 5.5V or 2.5V to 5.5V SINGLE SUPPLY VOLTAGE HARDWARE WRITE CONTROL (ST24LW21 and ST24FW21)

PM 438 BL

Contextual Info: X1288 Data Sheet PRELIMINARY July 29, 2005 2-Wire RTC Real Time Clock/Calendar/CPU Supervisor with EEPROM FN8102.0 • High Reliability —Data Retention: 100 years —Endurance: 100,000 cycles per byte • 2-Wire™ Interface interoperable with I2C*

FM18L08-70-S

Abstract: TCA 700 FM18L08 FM18L08-70-P FM18L08-70-SG
Contextual Info: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process SRAM & EEPROM Compatible

Contextual Info: SGS-THOMSON M34C02 llllMJilLliMWIiei 2K SERIAL EEPROM for DIMM SERIAL PRESENCE DETECT PRELIMINARY DATA TW O WIRE l2C SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for M34C02

Contextual Info: SGS"THOMSON ST93CS66 ST93CS67 "*J m. IffltMilUIWMDIgS SERIAL ACCESS MICROWIRE BUS 4K 256 x 16 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING

AN404

Abstract: ST24E32 ST25E32
Contextual Info: ST24E32 ST25E32 SERIAL EXTENDED ADDRESSING COMPATIBLE WITH I2C BUS 32K 4K x 8 EEPROM COMPATIBLE with I2C EXTENDED ADDRESSING TWO WIRE SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 100,000 ERASE/WRITE CYCLES, OVER the FULL SUPPLY VOLTAGE RANGE 40 YEARS DATA RETENTION

M93S46

Abstract: M93S56 M93S66
Contextual Info: M93S66, M93S56, M93S46 4K/2K/1K x16 SERIAL MICROWIRE BUS EEPROM with BLOCK PROTECTION PRELIMINARY DATA INDUSTRY STANDARD MICROWIRE BUS 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SINGLE ORGANIZATION by WORD (x16) WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS

M93S46

Abstract: M93S56 M93S66
Contextual Info: M93S66, M93S56, M93S46 4K/2K/1K x16 SERIAL MICROWIRE BUS EEPROM with BLOCK PROTECTION PRELIMINARY DATA INDUSTRY STANDARD MICROWIRE BUS 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SINGLE ORGANIZATION by WORD (x16) WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS

Contextual Info: SGS-THOMSON . llIlMJilLIlMWDÊi M24C16, M24C08 M24C04, M24C02, M24C01 16K/8K/4K/2K/1K SERIAL l2C BUS EEPROM PRELIMINARY DATA TWO WIRE l2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 2ms TYPICAL PROGRAMMING TIME

AN404

Abstract: ST24E16 ST25E16
Contextual Info: ST24E16 ST25E16 SERIAL EXTENDED ADDRESSING COMPATIBLE WITH I2C BUS 16K 2K x 8 EEPROM COMPATIBLE with I2C EXTENDED ADDRESSING TWO WIRE SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES, OVER the FULL SUPPLY VOLTAGE RANGE 40 YEARS DATA RETENTION

ST95022

Contextual Info: ST95022 2Kbit SERIAL SPI EEPROM with HIGH SPEED CLOCK HIGH SPEED CLOCK RATE: – 2.1 MHz Max 1,000,000 ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE 4.5V to 5.5V SUPPLY VOLTAGE SPI BUS COMPATIBLE SERIAL INTERFACE BLOCK WRITE PROTECTION STATUS REGISTER

an404

Abstract: ST24E16 ST25E16
Contextual Info: ST24E16 ST25E16 SERIAL EXTENDED ADDRESSING COMPATIBLE WITH I2C BUS 16K 2K x 8 EEPROM COMPATIBLE with I2C EXTENDED ADDRESSING TWO WIRE SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES, with OVER 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE

25C04

Contextual Info: ST24C04, ST25C04 ST24W04, ST25W04 4 Kbit Serial l2C Bus EEPROM with User-Defined Block Write Protection • 1 MILLION ERASE/WRITE CYCLES with 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x04 versions - 2.5V to 5.5V for ST25x04 versions

M-2425

Abstract: M24128 M24128-W M24256 M24256-W TSSOP14 200mil so8b
Contextual Info: M24256 M24128 256K/128K SERIAL I2C BUS EEPROM PRELIMINARY DATA COMPATIBLE with I2C EXTENDED ADDRESSING TWO WIRE I2C SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 100,000 ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE – 4.5V to 5.5V for M24256 and M24128

ST24C02

Abstract: ST24W02 ST25C02 ST25W02
Contextual Info: ST24C02, ST25C02 ST24W02, ST25W02 SERIAL ACCESS 2K 256 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES with 10 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 3V to 5.5V for ST24x02 versions – 2.5V to 5.5V for ST25x02 versions HARDWARE WRITE CONTROL VERSIONS: