EEPROM RETENTION TESTING Search Results

Contextual Info: Philips Semiconductors Product specification 8-bit microcontrollers with DTMF generator and 256 bytes EEPROM 7 EEPROM AND TIMER 2 ORGANIZATION The PCA3354C; PCD3354A has 256 bytes of Electrically Erasable Programmable Read Only Memory EEPROM . Such non-volatile storage provides data retention without

EEPROM 28C256

Abstract: 7b9729 1C0302 28C040 28C256 82307 28C256 atmel 4b23 6D9708 6C9638
Contextual Info: PAGE 1 OF 10 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C256 CMOS EEPROM RELIABILITY DATA -150°C DYNAMIC OPERATING LIFE TEST -CYCLE TEST -200°C RETENTION BAKE -125°C DYNAMIC OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC)

tsop 338

Abstract: 28c010 28C010 Atmel 4C016 4b23 4h5229 4A05 MIL-M-38535 2D93 6F9630
Contextual Info: PAGE 1 OF 10 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C010 CMOS EEPROM RELIABILITY DATA* - 150°C DYNAMIC OPERATING LIFE TEST - CYCLE TEST - 200°C RETENTION BAKE - 125°C OPERATING LIFE TEST (PLASTIC) - 150°C RETENTION BAKE (PLASTIC) - 15 PSIG PRESSURE POT

AN-1009

Abstract: C1995 CS100 CS160 NM93C46 NM93C46N
Contextual Info: ENDURANCE The number of write erase cycles an EEPROM can withstand before a bit in the memory fails RETENTION The length of time an EEPROM can reliably retain data after programming There are no formal industry standards for determining the techniques or the parameters of endurance claims found in

CS160

Abstract: AN-1009 C1996 CS100 NM93C46 NM93C46N AN-1009 national
Contextual Info: ENDURANCE The number of write erase cycles an EEPROM can withstand before a bit in the memory fails RETENTION The length of time an EEPROM can reliably retain data after programming There are no formal industry standards for determining the techniques or the parameters of endurance claims found in

stmicroelectronics "serial eeprom"

Abstract: M93S46 M93S56 M93S66 M93SXX-R
Contextual Info: M93S66, M93S56, M93S46 4K/2K/1K x16 Serial Microwire Bus EEPROM with Block Protection INDUSTRY STANDARD MICROWIRE BUS 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SINGLE ORGANIZATION by WORD (x16) WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS

M93S46

Abstract: M93S56 M93S66
Contextual Info: M93S66, M93S56, M93S46 4K/2K/1K x16 Serial Microwire Bus EEPROM with Block Protection INDUSTRY STANDARD MICROWIRE BUS 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SINGLE ORGANIZATION by WORD (x16) WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS

M24C16

Contextual Info: SGS-THOMSON . llIlMJilLIlMWDÊi M24C16, M24C08 M24C04, M24C02, M24C01 16K/8K/4K/2K/1K SERIAL l2C BUS EEPROM PRODUCT PREVIEW TWO WIRE l2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 2ms TYPICAL PROGRAMMING TIME

ST24FC21

Abstract: ST24FW21 ST24LC21B ST24LW21
Contextual Info: ST24LC21B, ST24LW21 ST24FC21, ST24FW21 1Kb x8 DUAL MODE SERIAL EEPROM for VESA PLUG & PLAY 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 3.6V to 5.5V SINGLE SUPPLY VOLTAGE HARDWARE WRITE CONTROL (ST24LW21 and ST24FW21) TTL SCHMITT-TRIGGER on VCLK INPUT

Contextual Info: ST24E32 ST25E32 SERIAL EXTENDED ADDRESSING COMPATIBLE WITH I2C BUS 32K 4K x 8 EEPROM COMPATIBLE with I2C EXTENDED ADDRESSING TWO WIRE SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES, OVER the FULL SUPPLY VOLTAGE RANGE 40 YEARS DATA RETENTION

FM18L08-70-SG

Abstract: FM18L08 FM18L08-70-P FM18L08-70-S FM18L08-70-TG FM18L08-70 FM18L08-70-PG
Contextual Info: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 45 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process SRAM & EEPROM Compatible

AN404

Abstract: ST24E16 ST25E16
Contextual Info: ST24E16 ST25E16 16 Kbit Serial I2C EEPROM with Extended Addressing COMPATIBLE with I2C EXTENDED ADDRESSING TWO WIRE SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES, OVER the FULL SUPPLY VOLTAGE RANGE 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE

AN404

Abstract: ST24E16 ST25E16
Contextual Info: ST24E16 ST25E16 16 Kbit Serial I2C EEPROM with Extended Addressing COMPATIBLE with I2C EXTENDED ADDRESSING TWO WIRE SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES, OVER the FULL SUPPLY VOLTAGE RANGE 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE

VGA Cable pin

Abstract: 4fc21 ST24FC21 ST24FC21B ST24FW21 ST24LC21B ST24LW21
Contextual Info: ST24LC21B, ST24LW21 ST24FC21, ST24FC21B, ST24FW21 1 Kbit x8 Dual Mode Serial EEPROM for VESA PLUG & PLAY 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 3.6V to 5.5V or 2.5V to 5.5V SINGLE SUPPLY VOLTAGE HARDWARE WRITE CONTROL (ST24LW21 and ST24FW21)

PM 438 BL

Contextual Info: X1288 Data Sheet PRELIMINARY July 29, 2005 2-Wire RTC Real Time Clock/Calendar/CPU Supervisor with EEPROM FN8102.0 • High Reliability —Data Retention: 100 years —Endurance: 100,000 cycles per byte • 2-Wire™ Interface interoperable with I2C*

FM18L08-70-S

Abstract: TCA 700 FM18L08 FM18L08-70-P FM18L08-70-SG
Contextual Info: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process SRAM & EEPROM Compatible

Contextual Info: SGS-THOMSON M34C02 llllMJilLliMWIiei 2K SERIAL EEPROM for DIMM SERIAL PRESENCE DETECT PRELIMINARY DATA TW O WIRE l2C SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for M34C02

Contextual Info: SGS"THOMSON ST93CS66 ST93CS67 "*J m. IffltMilUIWMDIgS SERIAL ACCESS MICROWIRE BUS 4K 256 x 16 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING

M24128

Abstract: M24128-W M24256 M24256-W TSSOP14 a2cb
Contextual Info: M24256 M24128 256 Kbit/128 Kbit Serial I2C Bus EEPROM without Chip Enable Lines PRELIMINARY DATA COMPATIBLE with I2C EXTENDED ADDRESSING TWO WIRE I2C SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 100,000 ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE

AN404

Abstract: ST24E32 ST25E32
Contextual Info: ST24E32 ST25E32 SERIAL EXTENDED ADDRESSING COMPATIBLE WITH I2C BUS 32K 4K x 8 EEPROM COMPATIBLE with I2C EXTENDED ADDRESSING TWO WIRE SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 100,000 ERASE/WRITE CYCLES, OVER the FULL SUPPLY VOLTAGE RANGE 40 YEARS DATA RETENTION

93S66

Abstract: L02025
Contextual Info: SGS-THOMSON M93S66, M93S56, M93S46 4K/2K/1K x16 SERIAL MICROWIRE BUS EEPROM _ with BLOCK PROTECTION PRELIMINARY DATA • INDUSTRY STANDARD MICROWIRE BUS ■ 1 MILLION ERASE/WRrTE CYCLES, with 40 YEARS DATA RETENTION ■ SINGLE ORGANIZATION by WORD (x16)

M93S46

Abstract: M93S56 M93S66
Contextual Info: M93S66, M93S56, M93S46 4K/2K/1K x16 SERIAL MICROWIRE BUS EEPROM with BLOCK PROTECTION PRELIMINARY DATA INDUSTRY STANDARD MICROWIRE BUS 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SINGLE ORGANIZATION by WORD (x16) WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS

M93S46

Abstract: M93S56 M93S66
Contextual Info: M93S66, M93S56, M93S46 4K/2K/1K x16 SERIAL MICROWIRE BUS EEPROM with BLOCK PROTECTION PRELIMINARY DATA INDUSTRY STANDARD MICROWIRE BUS 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SINGLE ORGANIZATION by WORD (x16) WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS

Contextual Info: SGS-THOMSON . llIlMJilLIlMWDÊi M24C16, M24C08 M24C04, M24C02, M24C01 16K/8K/4K/2K/1K SERIAL l2C BUS EEPROM PRELIMINARY DATA TWO WIRE l2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 2ms TYPICAL PROGRAMMING TIME