EE 3201 Search Results

DSP56300

Abstract: MSC8101 SC140
Contextual Info: Order Number: AN2073/D Rev. 0, 11/2000 MOTOROLA Semiconductor Products Sector Application Note Contents Differences Between the EOnCE and OnCE Ports 1 External Pins. 2 Barbara Johnson 1.1 1.2 EE Signals Control Register . 3

0x80c0

Abstract: DSP MSC8100 DSP56300 MSC8101 SC140 MSC140CORE
Contextual Info: Freescale Semiconductor, Inc. Order Number: AN2073/D Rev. 0, 11/2000 MOTOROLA Contents Differences Between the EOnCE and OnCE Ports 1 External Pins. 2 Barbara Johnson 1.1 1.2 EE Signals Control Register . 3 Example: EE0 As an Output to

IC mcp 3201

Abstract: MPC740 MPC740A MPC750 MPC750A XPC750P SE0111 B10H
Contextual Info: Freescale Semiconductor, Inc. Order Number: MPC750EC/D Rev. 2.3, 9/2001 Freescale Semiconductor, Inc. Semiconductor Products Sector O IC EM R, O CT U ND C IN . S E L CA MPC750A RISC Microprocessor S EE R Hardware Specifications F BY This document is primarily concerned

transistor b528

Abstract: M68HC11 M68HC12 M68HC12A4EVB MC68HC12 MC68HC812A4 F26FB mdw 45 mc68hc908 32 dip pin assignment
Contextual Info: Freescale Semiconductor, Inc. M68HC12A4EVBUM/D October 1999 Freescale Semiconductor, Inc. M68HC12A4EVB EVALUATION BOARD OR, USER’S MANUAL UCT CH R A ED V I BY EE R F LE A SC S N O IC M E D For More Information On This Product, Go to: www.freescale.com

Y08SV-312B

Abstract: Y08SV312B y08sv capacitancia resistencia SE 135 E165829 circuitos y08s vus3
Contextual Info: SANKOSHA U.S.A., INC. 406 Amapola Avenue, Suite 135, Torrance, CA 90501, EE. UU. •www.sankosha-usa.com Sin cargo: 888 711-2436 · Teléfono: (310) 320-1661 · Fax: (310) 618-6869 · Correo electrónico: sales@sankosha-usa.com Y08SV-312B Protección de fuentes de alimentación de CA

1167-01

Abstract: transistor 1167-01 XPC603 LOCTITE 263 MPC603E MPC603R AAVID THERMALLOY COMPOUND 250
Contextual Info: Freescale Semiconductor, Inc. Order Number: MPC603E7TEC/D Rev. 4, 5/2000 ,I R TO C U N D Technical Data IC O PowerPCª 603e RISC Microprocessor Family: LE SE M PID7t-603e Hardware SpeciÞcations FR EE SC A The PowerPC 603eª microprocessor is an implementation of the PowerPC family of reduced instruction

Contextual Info: Single wires TYPE EE xxxx SPC or SPCA -90C°/ +200°C PTFE 1000 Volts AC Standard colours See page III SPECIFICATIONS Conductor : ASTM-B-224 ASTM-B-298 Insulation : ASTM-D-4895 Insulated wire : NF-C-93523/6 NEMA-HP3 ASTM-B-624 PRIMARY WIRE B C D E F G H J

descargar

Abstract: Y08SV-272B norma DECODIFICADOR decodificador digital datasheet decodificador digital Y08SV312B conexion la 6500 Y08SV-312B
Contextual Info: SANKOSHA U.S.A., INC. 406 Amapola Avenue, Suite 135, Torrance, CA 90501, EE. UU.• Teléfono: 310 320-1661 · Fax: (310) 618-6869 Protección de fuentes de energía reconocida por UL para decodificadores Modelo Y08SV-312B En general, los decodificadores para aplicaciones de cable y de satélite se clasifican dentro de

HY1906

Abstract: erl-35c HY 1906 ERL-35-2 HY1506 EE-19 N Erl-39 HY3506 HY1001 ERL-35
Contextual Info: it «e m t ra. & 5] -f • o HY 0401 í-4 tr era 6P LO) t * 1 HY 0402 -4-1 (6P) UU10. 5—2(4P) HY 1003 A5034 (5P) « * HY 0602 HY 0601 Í-6 <-6-1 (6P) (6P) * * HY 0801 EE-8.3 (6P) HY 0802 (12P) HY 0803 HY 0901 RM-8-1 (12P) UU-9.8 (4P) HY 1007 HY 1201

Contextual Info: 2014-01-14 Silicon NPN Phototransistor in SMT Package NPN-Silizium-Fototransistor im SMT-Gehäuse Version 1.2 SFH 3201 Features: Besondere Merkmale: • Spectral range of sensitivity: typ 460 . 1080 nm • Package: Reflective Interrupter • Special: High linearity

Contextual Info: 2013-08-20 Silicon NPN Phototransistor in SMT Package NPN-Silizium-Fototransistor im SMT-Gehäuse Version 1.1 SFH 3201 Features: Besondere Merkmale: • Spectral range of sensitivity: typ 460 . 1080 nm • Package: Reflective Interrupter • Special: High linearity

Contextual Info: 2007-03-30 Silicon NPN Phototransistor in SMT Package NPN-Silizium-Fototransistor im SMT-Gehäuse Version 1.0 SFH 3201 Features: Besondere Merkmale: • Spectral range of sensitivity: 460 . 1080 nm • Package: Reflective Interrupter • Special: High linearity

pdso6

Abstract: phototransistor 500-600 nm GEO06982
Contextual Info: NPN-Silizium-Fototransistor im SMT-Gehäuse Silicon NPN Phototransistor in SMT Package SFH 3201 Vorläufige Daten / Preliminary Data 6.2 5.8 3.4 3.0 A B 2.45 spacing 2.1 1.7 0.0.1 Active area 0.55 6 1 2 3 5 4 0.7 0.4 0.5 0.3 4.2 3.8 1.27 spacing 0.15 0.13

Q62702-P5209

Contextual Info: NPN-Silizium-Fototransistor im SMT-Gehäuse Silicon NPN Phototransistor in SMT Package SFH 3201 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität • SMT-Bauform ohne Basisanschluß, geeignet

Contextual Info: NPN-Silizium-Fototransistor im SMT-Gehäuse Silicon NPN Phototransistor in SMT Package SFH 3201 Vorläufige Daten / Preliminary Data 6.2 5.8 3.4 3.0 A B 2.45 spacing 2.1 1.7 0.0.1 Active area 0.55 6 1 2 3 5 4 0.7 0.4 0.5 0.3 4.2 3.8 1.27 spacing 0.15 0.13

Q62702-P5043

Contextual Info: NPN-Silizium-Fototransistor im SMT-Gehäuse Silicon NPN Phototransistor in SMT Package SFH 3201 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität

Q62702-P5043

Abstract: ee 3201 IC 3201 Q62702-P5209
Contextual Info: NPN-Silizium-Fototransistor im SMT-Gehäuse Silicon NPN Phototransistor in SMT Package SFH 3201 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität

Contextual Info: SIEMENS NPN-Silizium-Fototransistor im SMT-Gehäuse Silicon NPN Phototransistor in SMT Package SFH 3201 Vorläufige Daten / Preliminary Data 5 GE006982 1 2 - - 3 4 5 6 Emitter Collector - - Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

IC 3201

Abstract: Q65110A2479
Contextual Info: NPN-Silizium-Fototransistor im SMT-Gehäuse Silicon NPN Phototransistor in SMT Package Lead Pb Free Product - RoHS Compliant SFH 3201 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität

Q65110A2479

Contextual Info: NPN-Silizium-Fototransistor im SMT-Gehäuse Silicon NPN Phototransistor in SMT Package Lead Pb Free Product - RoHS Compliant SFH 3201 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität

Contextual Info: SIEMENS NPN-Silizium-Fototransistor im SMT-Gehäuse Silicon NPN Phototransistor in SMT Package SFH 3201 Vorläufige Daten / Preliminary Data GE006982 1 2 3 4 5 6 - - Emitter Collector - - Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

HP 2601

Abstract: EQ-eE-01 EE-2219 512xx2019 et 3007 512xx2419 ET2407 ET2807 habia EE-3201
Contextual Info: Data provided indicates nominal values unless stated otherwise and is only valid for reference purposes at the time of publication and is subject to change without prior notice. Stranding 250 Volt Dia. mm DC-Res @ 20oC W / km OD mm Nom Tol. Habia Wt Description:

NF C 93-523

Abstract: ASTM-B-355 AXON 3007 AXON CABLE 3207 A-2RS1TN9/MT33
Contextual Info: Extruded single wires 1 to 11 12 to 15 16 to 18 PTFE insulation FEP insulation ETFE insulation 1992 axon' cable - equipment wires and cables for high temperatures released 03/2010 Ultra miniature single wires TYPE UT xxxx SPC or SPCA -90°C / +200°C

HC12 CPU12

Abstract: 8D-13 00FF HC12 HCS12 M68HC12 MC68HC812A4 hcs12 index registers
Contextual Info: Freescale Semiconductor, Inc. Reference Guide CPU12RG/D Rev. 2, 11/2001 Freescale Semiconductor, Inc. CPU12 Reference Guide for HCS12 and original M68HC12 7 A 0 7 B 15 D 8-BIT ACCUMULATORS A AND B OR 16-BIT DOUBLE ACCUMULATOR D 15 X INDEX REGISTER X 15