EDI R DIODE Search Results

Contextual Info: HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY SILICON RECTIFIER DIODES • Up to 250 ns max. recovery • Small size • Exceptionally low leakage • Avalanche characteristics R E V E R S E R E C O V E R Y T IM E EDI PRV Type Volts 3W 2 2,000 not applicable 3W 2.5

Contextual Info: 50ns ULTRA-FAST RECOVERY HIGH-VOLTAGE RECTIFIER DIODES PRV to 5,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche chracteristics PRV 3000 4000 5000 EDI type RUSH103 R U S H 104 RUSH105 ELECT R ICAL CH ARACTERISTICS at TA = 25°C, Unless Otherwise Specified

Contextual Info: 50ns ULTRA-FAST RECOVERY HIGH-VOLTAGE RECTIFIER DIODES PRV to 5,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche chracteristics PRV 3000 EDI type R U S H 103 4000 5000 R U S H 104 R U S H 105 ELECT R ICA L CH ARACTERISTICS at TA = 25°C, Unless Otherwise Specified

edi rectifier rush 103

Contextual Info: 50ns ULTRA-FAST RECOVERY HIGH-VOLTAGE RECTIFIER DIODES ✓ PRV to 5,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche chracteristics P RV 3000 4000 5000 EDI type R U S H 103 R U S H 104 R U S H 105 ELECTRICAL CHARACTERISTICS at TA = 25°C , Unless Otherwise Specified

7 segment display sm 42056

Abstract: 7 Segment sm 42056 7 segment display sm 42056 national instrument kp series stepper motor japan servo co ru 94v0 ltc 126 sm 42056 siemens SID 801 smd marking 271 Sot helipot 7286 r10k l.25 helipot 7286 potentiometer
Contextual Info: SI technologies ' CORPORATION THIRD EDI TI ON .Ü a IV! • m ? , ,I • Passive Netw orks f it k R e s i s t o r s?Vu. Chip • ^ fs< _ ' Power L * '• ^ Resistors ^ ~ * «s» -h r ,? 7 , ^ Trim m ers „ i * M r «2 • i rP Di i ¿r1" Me ¡t f r osition

Contextual Info: A D E - 2 0 8 - 3 5 6 F Z 2SK2529 Silicon N Channel MOS FET 7th. Edi ti on HITACHI Application High speed power switching Features • Low on-resistance R D S (o n ) = 7 m ß t y p . • High speed switching • 4 V gate drive device can be driven from 5 V source

Scans-0017357

Abstract: 20DI
Contextual Info: EDI S W A N MAZDA 20DI DOUBLE DIO DE Separate Cathodes Indirectly heated— for series operation REPLACEMENT TYPE R A T IN G H eater Voltage (volts) Heater C u rre n t (amps) M axim um Mean A n o d e C u rre n t per A nod e (m A) M axim um Peak A n o d e C u rre n t

MMBTA5551

Abstract: EM401 MMBTA6520 MMBFJ174 MMBTA5401 j y w sot23 MMBTH918 smd diode 01C sot-23/BC327 SOT yo
Contextual Info: edi ELECTRONIC DEVICES, INC. 21 GRAY O AK S AVENUE • Y O NK ERS, N E W YORK 10710 3 1 4 - 9 6 5 - 4 - 4 0 0 • 1- 5 0 0 - 6"7B - O B 2 B . FA X 9 1 4 - 9 6 5 - 5 5 3 1 E -M A IL : E D I - S A L E S @ I N T E R N E T M C I .C O M SURFACE MOUNT DEVICES TRANSISTORS

edi minibridge pb20

Abstract: Rectifier edi minibridge edi minibridge PB edi pb20 6ca4 5r4wga MPI 140 120 bridge rectifier
Contextual Info: electronic devices, inc. Short Form Catalog 90 silicon bridge rectifiers low & hv diodes stock & custom hv assemblies ELECTRONIC DEVICES, INC. • 21 GRAY OAKS AVE., YONKERS, NY 10710 • 914-965-4400 • 800-678-0828 • FAX 914-965-5531 • TELEX 681-8047

Contextual Info: 50ns ULTRA-FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES PIV to 10,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche characteristics PRV 8 KV 10 KV EDI S ER IES RUST2008 RUST2010 ELECTRICAL CHARACTERISTICS at TA = 25°C Unless Otherwise Specified

100DC

Abstract: at 3rw3 1 3RW22
Contextual Info: HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY SILICON RECTIFIER DIODES • • • • Up to 250 ns max. recovery Small size Exceptionally low leakage Avalanche characteristics REVERSE RECOVERY TIME EDI Type PRV Volts Fig. 4 3W2 2,000 not applicable 3W2.5 2,500

eDI 10 rectifier

Contextual Info: 50ns ULTRA-FAST RECOVERY HIGH-VOLTAGE RECTIFIER DIODES PRV to 5,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche chracteristics PRV 3000 4000 5000 EDI type RUSH103 RUSH104 RUSH105 ELECTRICAL CHARACTERISTICS at TA = 25 °C, Unless Otherwise Specified

Contextual Info: AMERICAN/ELECTRONIC L.3E D 0b7L743 0001013 bbD « E D I MINIATURE HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR T.V. APPLICATIONS TYPE - TR 12 This miniature high voltage fast recovery diode was developed for assembly and encapsulation in a minimum of space and is intended primarily for use as a building block in the assembly of

RUST2006

Abstract: RUST2008 RUST2010
Contextual Info: AMERIC AN/ ELECTRO NIC b3E » • Qh7b743 0001007 3b7 50ns ULTRA-FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES PIV to 10,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche characteristics PRV 6000 8000 10000

Contextual Info: 50ns ULTRA-FAST RECOVERY HIGH-VOLTAGE RECTIFIER DIODES PRV to 5,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche chracteristics PRV 3000 EDI type RUSH103 4000 5000 RUSH104 RUSH105 ELECTRICAL CHARACTERISTICS at TA = 25°C, Unless Otherwise Specified

Contextual Info: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE—TVR 20 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for

edi r diode

Abstract: diode Standard Recovery diode YS 040
Contextual Info: NVD NVDX ARRAYS NIGHT VISION H.V. RECTIFIER DIODES & ARRAYS These diodes and arrays have been specifically designed for use in night vision and image intensifier equipment power supplies. They offer unusual characteristics that have not been previously available. As a result of a proprietary EDI diffusion process, they feature small size

eDI 10 rectifier

Contextual Info: 300 NANOSECOND AT 200°C HIGH TEMPERATURE— FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES • Exceptional high temperature stability up to 200°C • Exceptional low leakage • Small size • 3KV PRV Our proprietary diffusion and passivation process provides this unusual stability and

Contextual Info: HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY SILICON RECTIFIER DIODES • Up to 250 ns max. recovery • Small size • Exceptionally low leakage • Avalanche characteristics REVERSE RECOVERY TIME EDI Type PRV Volts Fig. 4 3W2 2,000 not applicable 3W2.5 2,500

RUSH

Abstract: RUSH103 RUSH104 RUSH105
Contextual Info: RUSH 50ns ULTRA-FAST RECOVERY HIGH -VOLTAGE RECTIFIER DIODES PRV to 5,000 Volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche characteristics PRV 3000 4000 5000 EDI type RUSH103 RUSH104 RUSH105 ELECTRICAL CHARACTERISTICS at TA =25 o C Unless Otherwise Specified

Contextual Info: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE— TVR30 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for

Contextual Info: 50ns ULTRA-FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES PIV to 10,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche characteristics PRV 8 KV 10 KV EDI SERIES RUST2008 RUST2010 ELECTRICAL CHARACTERISTICS at TA = 25 °C Unless Otherwise Specified

Contextual Info: 50ns ULTRA-FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES PIV to 10,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche characteristics PRV 6000 8000 10000 EDI SERIES RUST2006 RUST2008 RUST2010 ELECTRICAL CHARACTERISTICS at TA = 25 °C Unless Otherwise Specified

RUST2008

Contextual Info: 50ns ULTRA-FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES PIV to 10,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche characteristics PRV 8 KV 10 KV EDI SERIES RUST2008 RUST2010 ELECTRICAL CHARACTERISTICS at TA = 25 °C Unless Otherwise Specified