ED MARKING CODE DIODE Search Results

Contextual Info: ERB83-006 2a : Outline Drawings SCHOTTKY BARRIER DIODE : Features : Marking Low VF • X -f y ^ ^ f c r - K ^ t t l c a v . ' * 7 - 3 - K Hi Color code : Super high speed switching. High reliability by planer design. A bridg ed typ e name S E ? 5 7. : Applications

Contextual Info: T O SH IB A TVR4J,TVR4N TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR4J, TVR4N HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • • • Unit in mm Repetitive Peak Reverse Voltage : Vrrm = 600, 1000V Average Forward Current : Ip(AV) = 1-2A (Ta = 55°C)

ED 69 SOD

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR ZENER DIODES MMSZ4685 - MMSZ4717 SOD-123 PLASTIC PCAKAGE ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION Power Dissipation at TL=75ºC Junction Temperature

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ZD1.8 THRU ZD36 ZENER DIODE ZD1.8 THRU ZD36 ZENER DIODES „ FEATURES * Compact, 2-pin SOD-323&SOD-123 and 3-pin(SOT-23) mini-mold types for high-density mounting. * High demand voltage range (1.8V~36V) is manufactured on high-efficient non-wire bonding production line.

ED marking code diode

Contextual Info: CM1204 4-Channel ESD Array in CSP Product Description The CM1204 is a quad ESD transient voltage suppression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge

VISHAY diode MARKING ED

Abstract: VISHAY MARKING ED ED MARKING Vishay K77 diode VISHAY MARKING EA BAT750 BAT750-GS08 BAT750-GS18
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case

PD3S160

Contextual Info: PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: Alert Type: April 18, 2007 August 23, 2006 Discrete Part Marking DCS/PCN-1071 PCN #: PCN #: 1071 TITLE PD3S Family Marking Change IMPACT Device Marking Code Only DESCRIPTION OF CHANGE

diode marking H2

Abstract: 4060BE h2 marking d 1354 Es600
Contextual Info: SC311 0.5A ( 400V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HC Applications

ED marking code diode

Abstract: IRF530S
Contextual Info: PD- 95985 IRF624SPbF • Lead-Free www.irf.com 1 12/21/04 IRF624SPbF 2 www.irf.com IRF624SPbF www.irf.com 3 IRF624SPbF 4 www.irf.com IRF624SPbF www.irf.com 5 IRF624SPbF 6 www.irf.com IRF624SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

Contextual Info: T O SH IB A TFR4N,TFR4T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR4N, TFR4T STROBO FLASHER APPLICATIONS. FAST RECOVERY Unit in mm • Average Forward Current : Ijr (AV) = 0.3A • Repetitive Peak Reverse Voltage : Vr rm = 1000, 1500V • Reverse Recovery Time

Contextual Info: T O SH IB A TVR2B,TVR2G,TVR2J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR2B, TVR2G, TVR2J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current : If (AV) =0.5A (Ta = 50°C) Repetitive Peak Reverse Voltage : V t?:r m = 100V~600V

Contextual Info: T O SH IB A TFR2N,TFR2T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR2N, TFR2T Unit in STROBO FLASHER APPLICATIONS. FAST RECOVERY : Ip (AV)= 0.5A : V rrjv[ = 1000, 1500V : trr = 4/«s 0 2 -6 5 Average Forward Current Repetitive Peak Reverse Voltage

diode 1000V 10a

Contextual Info: ERB44 1.0A ( 200 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability Voltage class Applications Maximum ratings and characteristics Cathode mark

ED marking code diode

Contextual Info: PD- 95748 IRF620SPbF • Lead-Free www.irf.com 1 8/23/04 IRF620SPbF 2 www.irf.com IRF620SPbF www.irf.com 3 IRF620SPbF 4 www.irf.com IRF620SPbF www.irf.com 5 IRF620SPbF 6 www.irf.com IRF620SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ZD1.8 THRU ZD36 ZENER DIODE ZD1.8 THRU ZD36 ZENER DIODES „ FEATURES * Compact, 2-pin SOD-323&SOD-123 and 3-pin(SOT-23) mini-mold types for high-density mounting. * High demand voltage range (1.8V~36V) is manufactured on high-efficient non-wire bonding production line.

ZD12 C

Abstract: diode zd33 zener diode zd16 ZD7.5 marKing CA2 sot-23 zd22 ZD75 ZD62 ZD24 ZD6.2
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ZD1.8 THRU ZD36 ZENER DIODE ZD1.8 THRU ZD36 ZENER DIODES „ FEATURES * Compact, 2-pin SOD-323&SOD-123 and 3-pin(SOT-23) mini-mold types for high-density mounting. * High demand voltage range (1.8V~36V) is manufactured on high-efficient non-wire bonding production line.

VISHAY diode MARKING ED

Abstract: VISHAY MARKING ED diode k77 K77 diode
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case

Contextual Info: SC802-09 1A (90V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design

1N5908 diode

Abstract: 1N5908 CB429 SM5908 STMicroelectronics DIODE marking code smc diode marking ed STMicroelectronics smc marking code
Contextual Info: 1N5908 SM5908 TRANSILTM FEATURES UNIDIRECTIONAL TRANSIL DIODE PEAK PULSE POWER : 1500 W 10/1000µs REVERSE STAND OFF VOLTAGE : 5 V LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION The 1N5908 and SM5908 are dedicated to the 5 V logic circuit protection (TTL and CMOS technologies).

MA3J745E

Abstract: MA745WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745E (MA745WK) Silicon epitaxial planar type For switching • Package  Two elements are contained in one package, allowing highdensity mounting  Low forward voltage VF , optimum for low voltage rectification

diode zd33

Abstract: ZD8.2 zener diode zd16 zd22 diode ZD22 ZD33 zener diode marking ES code ZD6,8 ZD12 diode zd12
Contextual Info: UTC ZD3.3 THRU ZD36 ZENER DIODE ZD3.3 THRU ZD36 ZENER DIODES 1 2 3 SOT-23 1 2 SOD-323 SOT-23: 1. NC 2. Anode 3. Cathode SOD-323: 1. Anode 2. Cathode *Pb-free plating product number: ZD3.3L THRU ZD36L THERMAL CHARACTERISTICS PARAMETER Total Device Dissipation

STM CL-80

Contextual Info: 1N5908 SM5908 TRANSIL FEATURES • . ■ ■ ■ ■ UNIDIRECTIONAL TRANSIL DIODE PEAK PULSE POWER: 1500 W 10/100(*is REVERSE STANDOFF VOLTAGE: 5 V LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION The 1N5908 and SM5908 are dedicated to the 5 V

EH EB EC ZENER

Abstract: cz 245 zener diodes zener de 3.5 volts DM marking code EK 110 MARKING CODE DH SOT 23 marking code dk ZENER DIODES DZ 12.5 BZX84B6V8 ez 724
Contextual Info: BZX84B…Series SILICON PLANAR ZENER DIODES This series of Zener diodes is offered in the 3 convenient, surface mount plastic SOT-23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are 1 well suited for applications such as cellular phones,

IEC1000-4-2

Abstract: MAZW068H MAZW082H
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZWxxxH Series Silicon planar type M Di ain sc te on na tin nc ue e/ d For surge absorption circuit • Features ■ Package • Two elements anode-common type • SSSMini type 3-pin package