ED 5840 Search Results

VEE25

Abstract: UCN5840A UCN5840LW UCN5841A UCN5842LW UCN5843A allegro 5841 UCN5841ALW
Contextual Info: ALLEGRO MICROSYSTEMS INC blE J> Mt 050433Û QQQbQSl 5841 5S43 • ALGR THRU BiM O S I I 8 -B IT SEBIAL-INPU T, LATC H ED D B IV EB S U C N 5841A - UCN5843A vEE CLO CK S E R IA L DATA IN LOGIC GROUND LOGIC SUPPLY S E R IA L DATA OUT STR O B E O U TP U T E N A B LE

A1266

Abstract: laf 001 UCN5840A UCN5840LW UCN5841 UCN5841A UCN5842LW UCN5843A a1266-1 3215s
Contextual Info: ; B iM O S II 8 -B IT SE R IA L -IN P U T LATCH ED D RIVERS U C N 5841A - U C N 5843A V ee CLOCK S E R IA L D A T A IN L O G IC G R O U N D LO G IC SUPP LY S E R IA L D A T A O U T STROBE O UTPUT ENABLE V ee Dwg. No. A-12,659 A BSO L U TE MAXIMUM RA TING S

5840 TUBE

Abstract: 6205 tube 5840 tube EF 76 RL 1962 I960 rs tube 5840 electronic tube 6205 subminiature
Contextual Info: 5840 TUNO-SOL PENTODE S U B M IN IA T U R E T Y P E .400 MAX. 1.070' C O A T E D U N IP O T E N T IA L C A T H O D E + 060 T 1.375" MAX. HEATER 6 .3 ± 0 .3 V O L T S 0 .1 5 A M P . A C OR DC 1.5 MIN. A N Y M O U N T IN G P O S IT IO N Il L GLASS BULB S UB MI N I ATURE

ISPGAL22V10AV-23LSN

Abstract: 5LSI GAL22LV10 GAL22V10 LVCMOS25 LVCMOS33 5807 sp ispGAL22V10AV-5LSNI
Contextual Info: ispGAL 22V10AV/B/C Device Datasheet June 2010 All Devices Discontinued! Product Change Notification PCN #09-10 has been issued to discontinue all devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes.

m6258

Abstract: transistor fst 239 MSM6258 ym22 SC2305 SC4M MSM6258VGSK B2N transistor
Contextual Info: O K I Semiconductor M SM 6258/M SM 6258V ADPCM SPEECH PROCESSOR FOR SOLID STATE RECORDER GENERAL DESCRIPTION T h e M S M 6258 is a com p lex and high ly in te­ g rated A D P C M sp e ech p ro ce sso r, im p le ­ m en ted in C M O S tech n o log y for low pow er

Contextual Info: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

KMM584000A7

Contextual Info: KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tRC 70ns 20ns 130ns KM M 584000A- 8 80ns 20ns 150ns K M M 584000A -10 100ns 25ns 180ns KM M 584000A- 7 • • • • • • •

chn 702

Abstract: chn 090 LMSW43LA-215 VC-2R diode fr 207
Contextual Info: Microwave Modules RF Diode Switches RF Diode SW with Integrated LPF 1.8+0 2 0 . 7 t0 2 r o l 2 (3) U U U - □ n r \ M a n ufa ctu re r's N am e Code (1 ) : R x (2)(4)(8) . GN D (3) : Tx (5) : Vc1 (6) : ANT (7) : Vc2 i r a 0 351:0.2 1 .2 7 *0 1 LMSW43LA-215

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC584000P/F/FT/TR TENTATIVE 4 M E G A BIT 524,288 W O R D x 8 BIT C M O S N AN D E2PROM DESCRIPTION The TC584000P / F / FT / TR is a 4M bits electrically erasable and programmable nonvolatile memory equipped with a 512K X 8 nonvolatile memory array and a 512K X 8 data register , which can operate with

1N6749

Abstract: 24185 5KPS 5A/54A18
Contextual Info: Transient Voltage Suppressors Microsemj Part Number Microsemi i | Division Package Outline Type Mil Data I Ppp Pulse Vwm Spec Sheet ID ' (W l Type (V) Ipp (A) VBR (V) Ve (V) 36 36 40 40 43 43 45 45 48 48 48 48 51 51 54 54 58 58 60 60 64 64 64 64 70 70 75

UCN-5840A

Abstract: 5841a UCN5840A
Contextual Info: SERIES UCN-5840A BiMOS II 8-BIT SERIAL-INPUT, LATCHED DRIVERS SERIES UCN-5840A BIMOS II 8-BIT SERIAL-INPUT, LATCHED DRIVERS FEATURES • • • • • • • • 3 .3 MHz M inim um D ata-Inp ut Rate CMOS, PMOS, NMOS, TTL Com patible Internal Pull-Up/Pull-D ow n R esisto rs

stk 412 -410

Abstract: stk 5315 STK 419 150 IRF CANAL P stk 412 -420 STK 412 150 equivalent stk 412 750 LTM 4620 component data D965 equivalent
Contextual Info: Microprocessor Assembly Language Programming Manual National Semiconductor Publication Number 4200130A Order Number IPC-16S/969Y January 1977 PACE Processing And Control Element Assembly Language Programming Manual National Semiconductor Corporation 2900 Semiconductor Drive

68B40

Abstract: MC6840P mc6840 R36W MC6840CL MC68B40 MC68B40P 68B40p mc68a40cl MC68A40C
Contextual Info: M OTOROLA P ROGRAM MABLE TIMER MODULE PTM> The M C6840 is a program m ab le subsystem co m p o n e n t o f the M6800 fam ily designed to provide variable system tim e intervals. T he M C6840 has three 16-bit binary c oun ters, three c orre spondin g c o n tro l registers, and a status register. These co u n te rs are under s o ft­

Contextual Info: TH I S DRAW I NG IS UNPUBLI SHED. C O P Y R I G HT 2 0 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR ALL 20 PUBLICATION R 1G H T S LOC D I ST R E V 00 RESERVED. LTR I S I O N S DESCRIPTION R E D WN , R E V; R EV ; DWN DATE EC 0 B 4 0 - 0 2 9 8 - 0 2 EC 0 B 4 0 - 0 0 3 8 -

5840 TUBE

Abstract: RCA-5840 5840 accelerationat60 GAT4 subminiature tubes
Contextual Info: 5840 SHARP-CUTOFF PENTODE "Premium" S u b m i n ia t u r e Type For RF and IF Broad-Band A p p l i c a t i o n s TENTATIVE DATA RCA-5840 is a s h a r p - c u t o f f s u b m i n i a t u r e pentode of the h e a te r - c a th o d e ty p e d e sig n e d p r i m a r i l y f o r u s e a s an r f o r i f a m p l i f i e r i n

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

led 7 segment LDS 5161 AK

Abstract: led 7 segment LDS 5161 AH 7-segment 4 digit LFD 5522 AKO 701 434 tdso 5160 k lds 7 segment LDS 5161 AK led 7 segment LDS 5161 As manual LG VARIABLE FREQUENCY DRIVE is3 -20/led 7 segment LDS 5161 AH ako 544 126
Contextual Info: NAM E; C O M P A N Y :. ADDRESS; . . C IT Y ; S TA TE: Z IP : C O U N T R Y :. P H O N E N O .; . .I — ;.-,. ' - V- ORDER NO. QTY. TITLE fTTT ±j . • . n i i lU . . II 11 1 i i 1111 1-T 2 .-.

IN5844

Abstract: IN5844 diode diode in5844 Diode "IN5844" IN5843 1N5837 diode 1N5841 zener diode 1N5847 1N5859 1N5838
Contextual Info: SPRAGUE Econoline' Plastic-M olded Silicon Diodes 1N5837 thru 1N5881 ZENER REGULATOR DIODES FEATURES • 2 .4 V th ru 62 V Ratings • 500 m W Pow er Dissipation • ± 5 % , ± 1 0 % , ± 2 0 % Zene r Tolerances • Low -Cost T 0 -9 2 Package • • Silicon-Oxide Passivated Ju n ctio n

WT 7520

Abstract: diode lt 8220 SAC 1630 L saa 1070 tic125 tsumu T920 thyristor GE 1780 scr 3f scr thyristor power diode 1000 volt 700 amper
Contextual Info: POWER SEMICONDUCTORS IN C 1TE D • 72^14^0 D0003b4 1 ■ POS "T-Ol-01 T'-ZS-C>| D PACK THYRISTOR POWER PACK TH YR ISTO R S 28mm. <25 mm.) RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature

jrm a55

Abstract: tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45
Contextual Info: PR E FA C E T he IBM P erson al C o m p u te r T ech n ical R eferen ce M anual is designed to pro v id e h ard w are design an d in terfa ce in fo rm atio n . T h is p u b licatio n also provides B asic In p u t O u tp u t S y stem B IO S in fo rm atio n as w ell as p ro g ram m ing su p p o rt m a tter.

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

1N5844

Abstract: 1n5844 diode 1N5882 1N5851 1N5837 1N5849 1n5874 diode 1N5841 1N5921 1N5221
Contextual Info: Zener Type No. Zener Voltage at I zt Vo Its @ mA Max. Zener Impedance @ I zt Ohms Zener Voltage Tolerance Device Package Recommended Substitute 2 0 .0 2 0 .0 2 0 .0 2 0 .0 2 0 .0 2 0 .0 2 0 .0 2 0 .0 2 0 .0 2 0 .0 5 0 .0 5 0 .0 5 0 .0 5 0 .0 5 0 .0 5 0 .0

sm5818ap

Contextual Info: Single Supply Dual 16-Bit Audio DAC AD1866 a FEATURES Dual Serial Input, Voltage Output DACs Single +5 Volt Supply 0.005% THD+N Low Pow er –50 mW 115 dB Channel Separation Operates at 8؋ Oversampling 16-Pin Plastic DIP or SOIC Package APPLICATIONS M ultimedia Workstations

ZETEX T 1049

Abstract: ZETEX 1049 zener diode reliability fit 54760 853e 5614 supersot Application Note 19 switch NPN SOT 201 zener diode sot23 e-line 113
Contextual Info: Application Note 19 Issue 2 November 1995 Application Note 19 Issue 2 November 1995 Calculation of Failure Rate Component Reliability Numerous concepts and mathematical models have been proposed to assess t h e r e l i a b i l i ty p e r f o r m a n c e o f