EC 401 TRANSISTOR Search Results

b20100

Abstract: ptc 205 ir 520 T0-204MA
Contextual Info: Series PTC 401, PTC 402 High Voltage NPN Transistors 3 Amperes * 700 Volts FEATURES • High Voltage Rating - 7 0 0 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue APPLICATIONS • Switching Regulators • PWM Inverters

2N4007

Abstract: 2N4011 2N401 2N4006 2N400 N4010 2N4009
Contextual Info: TELEDYNE COMPONENTS . 5ûE D • r«-/7 flT17tiDE OQGt.S'iD b ■ PREMIUM PERFORMANCE U LTRA LOWrec sat 2N4006 THRU 2N4011 SILICON EPITAXIAL JUNCTION PNP SWITCHING TRANSISTORS G E O M E T R Y 292 »EC t*"*) 3 Ohms Typical LOW C^b LOW LEAKAGE H IG H B V ebo

PS2815-1-F3

Abstract: diode marking 100-10 n2 PS2815-4-A EN60747-5-2 PS2815-1 PS2815-1-F4 PS2815-4 PS2815-4-F3 VDE0884 PS2815-1-F3-A
Contextual Info: PHOTOCOUPLER PS2815-1,PS2815-4 LOW AC INPUT CURRENT, HIGH CTR 4, 16-PIN SSOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2815-1 and PS2815-4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor in a plastic SSOP for high density applications.

tab ic

Abstract: GE d44q3 D40N1 D40N2 D40N3 D40N4 D40N5 D40P1 D40P3 D40P5
Contextual Info: SILICON POWER TRANSISTORS NPN HIGH VOLTAGE Pt GE Type r c = 25°C Max. W D40N1 D 40N 2 D 40N 3 D40N4 6.25 6.25 6.25 6.25 Min. •c Cont. (V) (A) v CEO 60 250 30 300 60 300 6.25 375 D40P1 6.25 120 D 40P3 6.25 180 S l i i t l D42RI D 42R2 D 42R3 D42R4 6.25

PTC411

Contextual Info: \ ' Y 61 1 5 9 5 0 ' M IC R O S E M I ’ C O R P / P Ó W E R OS y 02E 0 0 4 0 8 D —- _? 3 —/ j DE i h l l S T S D DDDD4DÖ D r " • p T C 41 o PTC 411 Power Technology Components HÎGH VOLTAGE NPN TRANSISTORS ? 3.5 AMPERES 300 VOLTS Switch Time and

K1461

Abstract: BD180 transistor with gain 10 BD176 BD179 BD176 motorola
Contextual Info: MOTO RO LA SC XSTRS/R 1EE D § F MOTOROLA 0004715 b | BD176,-6,-10,-16 BD180,-6,-10 SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 3.0 AMPERES POWER TRANSISTOR PNP SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers

t2221

Abstract: 50J301 pt5088
Contextual Info: NPN TRANSISTORS ELECTRICAL CHARACTERISTICS a t Tt = 25 C A M a rk in g T ype 3 1 O D e vice V T BB CEO V LBfljESO M ax. @ VCB (V> (V) v CE(aat) DC C u rre n t G ain ^CBO <nA) (V) h FE h FE @ i c @ v CE Max. @ lc M in. M ax. (m A ) (V) (V) (m A ) lr M in. @ lc

MA4T64400

Abstract: low noise transistors MA4T645 MA4T644
Contextual Info: Silicon Low Noise Transistors Silicon Bipolar High fT Low IVoise Microwave Transistors M A4T64400 Series Features MA4T64435 - fT to 11 G H z Micro-X L o w N o ise F igu re at Low B ias V o lta g e H igh A sso cia te d G ain • H e rm e tic and S u rfa c e M o u n t

bux85

Contextual Info: N AI1ER PHILIPS/DISCRETE b'lE D bb53T31 0026577 H22 BUX84 BUX85 APX SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in TO-220 envelopes, intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain •

2SK929

Abstract: PS7K 2 fy
Contextual Info: M O S Field Effect Pow er Transistor 2SK929 MOS F E T Itffl 2SK929 l ì , T N MOS F E T 6 < , t •Vf- > r m , X ' i y f y tS > , K W m T O : mm) ¡ S l t l 'i S - X 'i 10.5 M A X . DC-D C 3 > /< - ? 4.7 M A X . 3 .0 M A X . # i t ° V d ss = 500 V, I dcdc) =

41ba

Abstract: BUW13AF BUW13F UBC098 sot199
Contextual Info: Product specification Philips Semiconductors BUW13F; BUW13AF Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, motor control systems, etc.

transistor marking bh ra

Abstract: 2SA1641
Contextual Info: S A N Y O S E M I C O N D U C T O R CORP SHE D 7 eJ‘ì707b 000-7140 4 2SA1641 T- 31-IS PNP Epitaxial Planar Silicon Transistor 2044 High-Current Switching Applications I2326A F eatures . Adoption of FBET, MBIT processes. • Low saturation voltage. • F ast switching speed.

FST 460 transistor

Abstract: DIODE 3LU TC-7600 Bt460 PS7K Transistor FST 460 IEF620 2SK1288
Contextual Info: ^ — S> • S ' — h NEC MOS — h= 7 > i> ^ M O S Field Effect Pow er Transistor 2SK1288 y<r7— M O S FET m m x i f f l 2 S K 1 2 8 8 i , mm M O S FET T", 5 v ic <r>frtsizu X -i -yf >?"T"' s'-i X t ’to fS^t >ffiÎÆT”, X ^ 7 f > ?, v u # i t /-f.iir &

TC-7606

Abstract: 2SK1283
Contextual Info: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to

transistor tt 2222

Abstract: TT 2222 npn vp10lp BLW87 sot 123 transistor L6
Contextual Info: PHILIPS INTERNATIONAL bSE J> • 711DÖ2ti DGb3371 1 ^ 3 ■I P H I N BLW87 J V _ V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is

SMD transistor A1

Abstract: IC 2003 E001 G003 CHIP COIL siemens matsua smd transistor A1 4 PIN
Contextual Info: iC-WD SWITCH-MODE DUAL 5 V REGULATOR Rev A1, Page 1/12 FEATURES Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë APPLICATIONS Input voltage 8 to 36 Vdc Highly efficient step-down regulator Switching transistor and free-wheeling diode integrated Adjustment of the regulator cut-off current with external

Contextual Info: CS-5203A Features Description The CS-5203A series of linear regu­ lators provides 3A at adjustable and fixed voltages of 1.5V, 3.3V, and 5V with an accuracy of + / - 1%. The adjustable version uses two external resistors to set the output voltage within a 1.25V to 18V

PS2801-1-F3-A

Abstract: PS2801-4-F3-A PS2801-1-F3 PS2801-4-A PS2801-1-A PS2801-1-V-F3-A PS2801-4 PS2801-1-F4-A ps2801-1-v-f3 DSA0014808.txt
Contextual Info: PHOTOCOUPLER PS2801-1,PS2801-4 HIGH ISOLATION VOLTAGE SSOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2801-1 and PS2801-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SSOP for high density applications.

TRANSISTOR si 6822

Abstract: SI 6822 PA2981C uPA2981 transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR UPA2982 TRANSISTOR NPN 6822
Contextual Info: M 'ê ' h =7 C o m p o u n d Transistor MP x t° ^ M > ' □ > h ^ ^ LED, A 2 9 8 1 , 2 9 8 2 ^ V 7 °, ^ T U"f «H— -T ¿¿PA2981, 2982ÌÌ, P N P , N PN F 7 y VsX i 7 t H B Î f f i i ' 1 4* Z>, Hiïl V - X f t i 8 ¡ M f à M f à r - >) > h > h 9 > P X ÿ T ^ 4 T to

diode in 5401

Abstract: transistor 5401
Contextual Info: PHOTOCOUPLER PS2805-1,PS2805-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SSOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2805-1 and PS2805-4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor in a plastic SSOP for high density applications.

Contextual Info: COS/MOS -401 I B - 4 o [ 2-5 IN T E G R A T E D CIRCUITS NAND GATES: QUAD DUAL TRIPLE CTHGF/4023 B 2INPUT HCC/HCF 4011B 4INPUT HCC/HCF 4012B 3INPUT HCC/HCF 4023B • P R O P AG ATIO N D E L A Y T IM E = 60 ns TYP. A T CL = 50 pF, V DD= 10V • • B U F F E R E D INPUTS A N D O UTPUTS

Halbleiterbauelemente DDR

Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Contextual Info: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der

Contextual Info: bb53^31 Philips Semiconductors QQgMflgg 335 WAPX Product specification NPN 4 GHz wideband transistor ^ BFG35 M APIER PHILIPS/DISCRETE b7E D DESCRIPTION PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features