EAS CODE Search Results

arcotronics

Abstract: arcotronics capacitors Arcotronics aluminium electrolytic capacitors 200 EAS107M050AL3AA arcotronics 12,5 arcotronics 12.5 arcotronics 1,4 ac capacitors ARCOTRONICS 12.5 capacitor
Contextual Info: ARCOTRONICS EAS Aluminium Electrolytic Capacitors SINGLE-ENDED LEADS – High temperature 125°C / 3000- 5000 h Description Long life 3000-5000 hours and high reliability. Marking Arcotronics’logo series EAS , operating temperature (125°C), capacitance (µF),

SMB MARKING mj

Abstract: tt110c B140B B140BT-01
Contextual Info: SPECIAL CUSTOMER PARTS SPECIFICATION SHEET 1. Part information Part Number: Description: Outline: Marking: Package: Issue date: Series No.: Cust. code.: Cust. dwg#: Rev. Level: B140BT-01 Special IFSM, VF, IR, EAS, IAR, Cj, Dim. A, H SMB Cathode band + LT logo + D/C + B140B

Contextual Info: Ceramic Substrate Trimmer Potentiometers/EVME२ 6 mm Square Dustproof Ceramic Trimmer Potentiometers Cermet, Radial Taping, with Knob Protection Type: EVMEAS/EVMEGS/EVMEES EAS EES • Features EGS ■ Recommended Applications ● High reliability due to cermet element

AN97080

Abstract: ISO7816-3 ISO7816-4 TDA8006 apdu
Contextual Info: APPLICATION NOTE EASY SOFTWARE DEVELOPMENT FOR TDA8006 Preliminary Library Reference Releas e 1. 3 AN/97080 C51 KEIL Compiler Philips Semiconductors EAS Y S OFTWARE DEVELOPMENT FOR TDA8006 Preli mi nary Li brary Reference APPLICATION NOTE EASY SOFTWARE DEVELOPMENT

Contextual Info: STGB20N40LZ, STGD20N40LZ Automotive 390 V internally clamped IGBT EAS 300 mJ Datasheet - preliminary data Features • Designed for automotive applications • ESD gate-emitter protection TAB • Gate-collector high voltage clamping TAB • Logic level gate drive

Contextual Info: STGB20N40LZ, STGD20N40LZ Automotive-grade 390 V internally clamped IGBT EAS 300 mJ Datasheet - production data Features • Designed for automotive applications and AEQ-Q101 qualified TAB • ESD gate-emitter protection TAB • Gate-collector high voltage clamping

ss2ph10

Contextual Info: SS2PH9 & SS2PH10 New Product Vishay General Semiconductor High-Voltage Surface Mount Schottky Barrier Rectifiers High Barrier Technology for improved high temperature performance Major Ratings and Characteristics IF AV VRRM IFSM EAS VF IR Tj max. 2.0 A 90 V, 100 V

Contextual Info: STGB35N35LZ STGP35N35LZ Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ Datasheet - production data Features TAB • Designed for automotive applications and AEC-Q101 qualified TAB • Low threshold voltage 3 1 D²PAK • Low on-voltage drop TAB

Contextual Info: Ceramic Substrate Trimmer Potentiometers/EVME 6 mm Square Dustproof Ceramic Trimmer Potentiometers Cermet, Radial Taping, with Knob Protection Type: EVMEAS/EVMEGS/EVMEES EAS EES n Features l High reliability realized by cermet element l No readjustment needed through knob protected

Contextual Info: POW ER Y TO US EAS E BL E Advanced Multi-GNSS Simulator FUTURE PROOF L FU GSG-6 Series AFF O R D A Upgradable to all constellations and signals • Multi-GNSS, Multi-Frequency Simulator • GPS standard, new L2C, L5 GLONASS, Galileo, and BeiDou • Simultaneous multi-frequency P-code

SS2P6E3

Contextual Info: SS2P5 & SS2P6 New Product Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier Major Ratings and Characteristics IF AV 2A VRRM 50 V, 60 V IFSM 50 A EAS 11.25 mJ VF 0.54 V Tj max. 150 °C DO-220AA (SMP) Features Mechanical Data

ss3p4

Abstract: SS3P4-E3/84A
Contextual Info: SS3P4 New Product Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier Major Ratings and Characteristics IF AV 3A VRRM 40 V IFSM 50 A EAS 11.25 mJ VF 0.50 V Tj max. 150 °C DO-220AA (SMP) Features Mechanical Data • • •

035H

Abstract: IRFPE30 diode code ae
Contextual Info: PD- 95502 IRFP048RPbF • Lead-Free Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V Max. ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 52 IDM 290 Pulsed Drain Current PD @TC = 25°C Power Dissipation VGS EAS Units

B1 6 zener

Abstract: GP35N35LZ 624 Marking Code ST IGBT code marking IC120 STGB35N35LZ STGB35N35LZ-1 STGB35N35LZT4
Contextual Info: STGB35N35LZ STGP35N35LZ EAS 450 mJ, 345 V internally clamped IGBT Features TAB • Low threshold voltage ■ Low on-voltage drop ■ High current capability ■ High voltage clamping feature ■ Gate and gate-emitter integrated resistor TAB 3 1 D²PAK 3 12

STGB35N35LZ-1

Abstract: STGP35N35LZ GP35N35LZ STGB35N35LZ STGB35N35LZT4
Contextual Info: STGB35N35LZ STGP35N35LZ EAS 450 mJ, 345 V, internally clamped IGBT Features TAB • Low threshold voltage ■ Low on-voltage drop ■ High voltage clamping feature ■ Gate and gate-emitter integrated resistors TAB 3 1 D²PAK TAB 3 12 Application ■ I²PAK

GB18N40LZ

Abstract: GD18N40LZ automotive pencil ignition coil STGP18N40LZ GP18N40LZ STGD18N40LZ STGB18N40LZ stgp18n40 STGB18N40LZ-1 STGB18N40LZT4
Contextual Info: STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive

2SK4174

Abstract: K4174 k417 2SK41 216mJ
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4174 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±25 V guaranteed  Avalanche energy capability guaranteed: EAS > 216 mJ

K4208

Abstract: 2SK4208 2SK420 2SK42
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±30 V guaranteed  Avalanche energy capability guaranteed: EAS > 801 mJ

IC120

Abstract: STGB35N35LZ STGB35N35LZ-1 STGB35N35LZT4 GE 019-4
Contextual Info: STGB35N35LZ EAS 450 mJ, 345 V internally clamped IGBT Features • Low threshold voltage ■ Low on-voltage drop TAB TAB ■ High current capability ■ High voltage clamping feature ■ Gate and gate-emitter integrated resistor 3 I²PAK D²PAK Application

GB18N40LZ

Abstract: GD18N40LZ GD18N GB18N40 GD18N40 gb18n40l STGD18N40LZ-1 STGD18N40LZT4 STGB18N40LZ STGB18N40LZT4
Contextual Info: STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive

GD18N40LZ

Abstract: GB18N40LZ GD18N GB18N40 SCHEMATIC IGNITION iGBT STGD18N40LZT4 ignition coil IGBT gb18n40l
Contextual Info: STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive

GD18N40LZ

Abstract: GB18N40LZ GB18N40 GD18N GD18N40 STGB18N40LZ STGB18N40LZ-1 STGB18N40LZT4 STGD18N40LZ STGD18N40LZ-1
Contextual Info: STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive

STGB35N35LZT4

Abstract: STGB35N35LZ STGB35N35LZ-1 GB35N35LZ Igbt high voltage low current
Contextual Info: STGB35N35LZ EAS 350 mJ, 350 V internally clamped IGBT Features • Low threshold voltage ■ Low on-voltage drop ■ High current capability ■ High voltage clamping feature ■ Gate and gate-emitter integrated resistor 3 I²PAK D²PAK Applications ■ 3

DO-220AA

Abstract: J-STD-002 VISHAY DO220AA
Contextual Info: New Product SS2P2, SS2P3 & SS2P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP TM Series DO-220AA SMP PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 20 V, 30 V, 40 V IFSM 50 A EAS 11.25 mJ VF 0.50 V