EAD 104 Search Results

Contextual Info: S crews * Round Head PART NO. SIZE Flat Head MATERIAL FINISH TYPE PART N O . Binder Head Oval Head “iiiiEZ; mm., r u r ir 1 Y r fc 1173 2 - 5 6 x 1 /4 STEEL Z IN C R ound H ead 1361 1 0 - 3 2 x 3 /4 STEEL Z IN C R ound H ead 1174 2 -5 6 x 1/2 STEEL Z IN C

2SC2712 equivalent

Abstract: Equivalent 2SC3074 2SC2873 equivalent Transistor 78 L 05 2SC2712
Contextual Info: 7. Maximum Ratings & Electrical Characteristics 7. Maximum Ratings & Electrical Characteristics 7.1 Maximum Ratings Maximum ratings are equal to those of conventional packages or equivalent with the exception of power dissipation and safe operating area. L ead Type

10415AF

Abstract: 10415BF 10415F
Contextual Info: BIPOLAR M E M O R Y DIVISION_ _ M AY 1982 1024-BIT ECL RAM 1024 X 1j 1 044 5/10415A/10415B DESCRIPTION PIN CONFIGURATION The 10415 d evice Is a 1024-word by l-b it, fu lly encoded ECL R ead/W rite Random

Contextual Info: Ordering number : EN%5086A CMOS LSI LC371000SP, SM-10/LC371000SP, SM-20LV SMSYO 1 MEG 131072 words x 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC371000SP, SM-10 and LC371000SP, SM-20LV are 1048576-bit M ask Program m able R ead Only

10150-8000EE

Abstract: ts-02 3505-28
Contextual Info: 3M Interconnection System Connectors .050" Unshieldeded Systems — Tripolarized, mini systems — half-pitch solutions Sockets, Headers, and MDR Connectors. W irem ount H ead ers, T ripolarized M DR > WÊÊÊÊÊÊ L ow P rofile * Contact Quantity Optional Metal

288P22494H101

Contextual Info: Type 288P Vishay Sprague R-C Arc Suppressors ORANGE DROP , R adial L ead Contact Arc Suppression reduces field maintenance, premature equipment failure and RFI. A capacitor connected across the contacts helps in the solution of these problems but can cause contact welding

philips ferrite core 4b1

Abstract: philips hybrid
Contextual Info: Philips Semiconductors Preliminary specification Hybrid wideband amplifier QM2083/87 DESCRIPTION APPLICATIONS A th ree -sta g e w ideband am plifier in hybrid integrated Intended for use in m ast-h ead booster am plifiers, as an circuit technology on a thin-film substrate.

TOLD387S-EAD

Abstract: told387s toshiba VF S11 TOLD387S-EAD1
Contextual Info: March 2002 Optical Communication Devices 10 Gb/s Optical Transmitter TOLD387S-EAD Series 011025 X cs Asia, Ltd. ce Century ward Road West, Kong -0969 Building, Lu, Chao Yang District, (010)6590-8791 cs Korea gjae-dong, 2)589-4302 gy Development d. dong New Area, Shanghai,

Long

Abstract: pk43 header
Contextual Info: VERTICAL H EAD ER ASSEMBLY ITEM NO. PART CHARACTERISTICS FOR VERTICAL HEADER P A CKAGING SPECIFICATIONS 43160-0102 PK-43 160-00 10 V ERTICAL H EADER ASSEMBLY ITEM NO. PA R T CHARACTERISTICS FOR VERTICAL HEADER PACKAGING SPECIFICATIONS 43160-0104 PK-43 160-00 10

Contextual Info: SMD Film Capacitors LDB series - pps dielectric rohs 6 ree F ead L Standard version Rated capacitance 16 VDC 50 VDC Size code Pcs per reel Hmax [mm] Part number Rated capacitance 3300 pF 12.06 3000 1.1 LDBCA1330 - C5 - - 3300 pF 3900 pF 12.06 3000 1.1 LDBCA1390 - C5 - -

Contextual Info: SMD Film Capacitors ree LDB Series - PPS dielectric RoHS 6 F ead L Standard version Rated capacitance 16 VDC 50 VDC Size code Pcs per reel Hmax [mm] Part number Rated capacitance 3300 pF 12.06 3000 1.1 LDBCA1330 - C5 - - 3300 pF 3900 pF 12.06 3000 1.1 LDBCA1390 - C5 - -

Contextual Info: SMD Film Capacitors LDE series - PEN dielectric RoHS 6 ree F ead L LOW VOLTAGE capacitance range: 1000 pF to 0.047 µF Standard and miniature versions 50 VDC / 40 VAC Rated cap. Size code Pcs per reel Hmax [mm] Part number 63 VDC / 40 VAC Size code Pcs per

Contextual Info: SMD Film Capacitors ree LDB Series - PPS dielectric RoHS 6 F ead L Standard version Rated capacitance 16 VDC 50 VDC Size code Pcs per reel Hmax [mm] Part number Rated capacitance 3300 pF 12.06 3000 1.1 LDBCA1330 - C5 - - 3300 pF 3900 pF 12.06 3000 1.1 LDBCA1390 - C5 - -

Contextual Info: SMD Film Capacitors LDE Series - PEN dielectric RoHS 6 ree F ead L LOW VOLTAGE capacitance range: 1000 pF to 0.047 µF Standard and miniature versions Rated cap. 50 VDC / 40 VAC Size code Pcs per reel Hmax [mm] 1000 pF 12.06 3000 1200 pF 12.06 3000 18.12

2SC2655Y

Abstract: 2SC2655-Y Toshiba 2SK147 2sc2655 y 2SK147 toshiba 2SK442 2SKxxxx 2SC2655YTPE6
Contextual Info: Tapin g Package Form .U nit:m m 9.1 TPS The data below list the TPS-type taping package specifications. 1 Dimensions Taping is conducted under the dim en­ sions listed in Table 1 and Fig. 1. N am e L ead clin c h height Symbol Dimensions HO I6 .0 ± 0 .5

a1232

Abstract: delco 23566 STR 6458 P193D
Contextual Info: -fa Sales Offices, Distributors & Representatives J u n e 1996 Altera Regional Offices NO RTH ERN CALIFORNIA C O R P O R A TE H EAD Q U AR TER S Altera Corporation 2610 Orchard Parkway San Jose, C A 95134-2020 TEL: (408)894-7000 FAX: (408)433-3943 (408) 894-7755

Contextual Info: IBM0164165B IBM0164165P P re lim in a ry 4M X 16 13/9 E D O DRAM Features • 4 ,194,304 word by 16 bit organization Dual C A S Byte R ead/W rite • Single 3.3 ± 0.3V pow er supply Perform ance: • Extended Data O ut H yper Page Mode • CAS before RAS Refresh

Marvell 88e6065

Abstract: 88e6065 88e6035 link street marvell 88e6065 MARVELL CONFIDENTIAL, under NDA 88E6035 Marvell 88E6031 88E6061 Marvell+88e6065 Marvell PHY register map
Contextual Info: gh t, pa ct t, Im pa ct 1k3md8dxmnckz-etgax43r * Memec Headquarters - Unique Tech, Insight, Impact * UNDER NDA# 12101050 Doc. No. MV-S102922-00, Rev. -March 21, 2006 Im nc kz M -et AR ga VE x4 LL 3r * CO Me NF me ID c ( EN H TI ead AL q , U uar ND ter ER s)

diode s6 6d

Abstract: MARKING 6B diode b86g s4si marking EB diode DIODE 4d gv marking 6B 6H MARKING diode IPP023N04N marking a6b
Contextual Info: IPP023N04N G Ie]R IPB023N04N G "%&$!"# 3 Power-Transistor Product Summary Features Q & ,  - 7@B( + :? 8 2 ? 5 . ? :? D6BB EAD:3 = 6 @G6B, EAA= I Q * E2 = :7:65 2 44@B5:? 8 D@ $     )# 7@BD2 B86D2 AA= :42 D:@? C V 9H ,( K R  , @? >2 H *&+ Z"

F10410

Abstract: 10410 V/DS-0025-11
Contextual Info: _ F U J IT S U / ECL 256-BIT BIPOLAR RANDOM ACCESS MEMORY MBM 10410 S eptem ber 1978 256-BIT BIPOLAR ECL RANDOM ACCESS MEMORY T he M BM 10 41 0 is an E C L 2 5 6 -B it R ead/W rite R andom Access M e m o ry R A M }, organized 25 6 w o rd s x 1 b it.

Contextual Info: Preliminary information •■ AS4C1M 16F5 A 5V 1M x 16 C M O S DRAM fast page mode Features • 1024 refresh cycles, 16 m s refresh interval • O rganization: 1,048 ,5 7 6 w ords x 16 bits • H igh speed - KAS-only or CAS-before-KAS refresh • R ead-m odify-w rite

Contextual Info: J U V Ifr * Catalog 1307612 AMPMODU System 50 Connectors Revised 7-01 T h ru -H o le H ead ers— U n sh ro u d ed , .050 x .100 [1.2 7 x 2.54] C enterline, B o ard-to-B oard Single Row, Vertical .125 [3 . 18] Material and Finish: .096 Housing— Black thermoplaslic,

ru 94v0

Contextual Info: Catalog 1307612 AMP AMPMODU System 50 Connectors Revised 7-01 T h ru -H o le H ead ers— S h ro uded, .050 x .100 [1.27 x 2.54] C enterline, B o ard-to-B oard Double Row, Vertical With Card Slots .015 Material and Finish: PCB and Wire Connectors Housing— Black thermoplastic.

Contextual Info: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • • 1 K x 36, 2 K x 18, 4 K x 9 O rganizations Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 j^m Process (Leff = 0.65|am) OTHER • R ead/W rite Cycle Tim es <35 ns (-55° to 125°C)