E47F010 Search Results

Contextual Info: E/M47F010 1024K Bit CMOS Flash EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • 128K Byte Flash Erasable Non• Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225 ps max rn -5 5 °C to +125°C Temp Read M47F010

Contextual Info: E /M 4 7 F 0 1 0 1024KBit CMOS Flash EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • 128K Byte Rash Erasable Non-Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225fjs max rn -5 5 °C to +125°C Temp Read M47F010

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Abstract: 48F010-200 47F010-200 47F010-250 47F010-300 48F010-250 48F010-300 AT29C010-12 AT29C010-20 AT29C010-25
Contextual Info: - 158 — 28 F O 1O ¥ 7. 'f 7 f* > VDD as -h /m %. % «i ns 0-71) 200 200 75 50 4. 5-5. 5 40/5 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 47F010-250 SEEQ 0-70 250 250 100 60 4. 5-5. 5 40/5 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 (*C> TOD •ax (ns) 1 A SEEQ 45 TOH US 47F01Q-200

AOI32

Contextual Info: SEEÚ TECHNOL OGY INC 11E I> • flina33 Q0027M4 0 E/M47F512 512K Bit CMOS FLASH EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features ■ 64K Byte FLASH Erasable Non-Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225ps max

Contextual Info: SEE<3 TECHNOLOGY INC HE D ainsaa q o q s 7ö 7 ? E/M48F010 PRELIMINARY DATA SHEET T -4 6 -1 3 -2 7 Ordering Information D M 48F010 ~ r Pickag» Typ* ~ T Temperatur« Rang« 1 D*vlc* D » Ceramic Dip E - - 4 0 to +85°C 128KX8FLASH EEPROM L « Ceramic Leadess Chip