E3 SOT523 Search Results

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF215 Preliminary JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC TF215 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone.  FEATURES * Good voltage characteristics and transient characteristics.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF2123 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  DESCRIPTION The UTC TF2123 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone

CAPACITOR MICROPHONE

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF2123 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  DESCRIPTION The UTC TF2123 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS „ DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone

SOT-113S

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone

PowerDI5060-8L

Abstract: DFN1006-2 DFN1006-3 DFN1006H4-2 DFN1006H4-3 DFN1310H4-6 DFN1411-3 DFN1612-6 DFN1616-6 DFN1616-8
Contextual Info: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E

L30ESD24VC3_2

Abstract: SOT23-6L L30ESD24VC3-2
Contextual Info: LITEON-SEMI ESD Application • • • • Computing Portables Consumer Electronics. Networking & Comm. Portable Products Cellular Phone Speaker & MIC. MIC L13ESD5V0CE2 LEF01016F6-2 LEF03216F6-2 ANT. L10ESDL5V0CE2 External Memory L15ESDL5V0D6-4 LCD & Backligt

TF218

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF218 JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC TF218 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone specially.  FEATURES * Good voltage characteristics and transient characteristics.

E3 SOT523

Abstract: DMN5L06TK
Contextual Info: Green DMN5L06TK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

DMN5L06TK

Contextual Info: Green DMN5L06TK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: D5V0L1B2LP3 LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Features Mechanical Data • Ultra-Small, Low Profile Leadless Surface Mount Package 0.6 *  0.3 * 0.3mm  NEW PRODUCT  Case: X3-DFN0603-2 Case Material: Molded Plastic, “Green” Molding Compound. UL

DFN1616-8

Abstract: DFN1006-2 DFN1006-3 DFN1006H4-2 DFN1006H4-3 DFN1310H4-6 DFN1411-3 DFN1612-6 DFN1616-6 620E
Contextual Info: Package Outline Dimensions Surface Mount Packages DFN1006-2 / DFN1006H4-2 DFN1006H4-2 DFN1006-2 G H A R B C N D Dim Min Max Typ Min Max Typ A 0.95 1.075 1.00 0.95 1.075 1.00 B 0.55 0.675 0.60 0.55 0.675 0.60 C 0.45 0.55 0.50 0.45 0.55 0.50 D 0.20 0.30 0.25

DMN53D0LT

Contextual Info: DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary ID TA = +25°C • N-Channel MOSFET • Low On-Resistance 350 mA • Very Low Gate Threshold Voltage 200 mA • Low Input Capacitance • Fast Switching Speed • Low Input/ Output Leakage

DMN33D8L

Contextual Info: DMN33D8LT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ID TA = +25°C 200 mA 115 mA RDS(ON) 5 Ω @ VGS = 4V 7 Ω @ VGS = 2.5V 30V NEW PRODUCT NEW PRODUCT Features Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching

.H2 sot89

Abstract: DFN1006-2 DFN1006-3 DFN1006H4-2 DFN1006H4-3 DFN1310H4-6 DFN1411-3 DFN1612-6 DFN1616-6 DFN1616-8
Contextual Info: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E

do-201 package

Abstract: DFN2020-3 SOD 523 0.85-1.25 DP SOT523 DFN1006-3 dfn3030-8 DFN1006-2 DFN1006H4-2 GBJ 1005 DFN1310H4-6
Contextual Info: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E

AA112A

Abstract: IPC-7351A
Contextual Info: PACKAGE OUTLINE DIMENSIONS AP02002 SUGGESTED PAD LAYOUT(AP02001) (Based on IPC-7351A) Table of Contents X4-DFN0402‐2/SWP . 10

OZ8118

Abstract: ps223 SD CARD CONTROLLER CMD26 intel g31 msi G993P1UF RTL811C BGA969 5KR04 apa2057a intel g41 msi
Contextual Info: A B C D MS-1431 VER : 0.A E DC JACK & Selector Page 27 1 1 SYS POWER Penryn Page 3,4 HOST +3V +5V FSB 667/800/1066 TPS51120 Page 29 RGB CRT NORTH BRIDGE Page 15 LVDS LVDS 2 NB9M PCIE2.0 Page 15 HDMI HDMI INTEL Dual Channel DDRII 667/800 MHZ Page 31 2 DDR-SODIMM0

SOT-95

Abstract: TO-252-4L sc59 dfn3030-8 MSOP-10 powerdi 123 DFN1006-3 DFN1006H4-2 WL-CSP1010H6-4 DFN1310H4-6
Contextual Info: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E

ITE8502E

Abstract: ITE8502E-L RTM875T-606 TPS51610 IT8502E ISL6251 INVENTEC ITE8502 alc269 SOT223 w27
Contextual Info: 5 4 3 2 1 D D ACER C C BAP41/BAP51/SJM52 UMA+Discrete SW Gfx MAIN BOARD B B 2009.04.23 A A EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE Thursday, April 23, 2009 DATE CHANGE NO. 5 SIZE= FILE NAME: XXXX-XXXXXX-XX P/N XXXXXXXXXXXX X01 REV 4 3 2 TITLE INVENTEC

ite8502e

Abstract: ISL6251 ITE8502E-L IT8502E ITE8512E ITE8502 IT8305E G5693 ITE8502F INVENTEC
Contextual Info: 5 4 3 2 1 THIS DRAWING AND SPECIFICATIONS, HEREIN, ARE THE PROPERTY OF INVENTEC CORPORATION AND SHALL NOT BE REPODUCED, COPIED, OR USED IN WHOLE OR IN PART AS THE BASIS FOR THE MANUFACTURE OR SALE OF ITEMS WITHOUT WRITTEN PERMISSION, INVENTEC CORPORATION, 2009 ALL RIGHT RESERVED.