E3 SOT523 Search Results

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF215 Preliminary JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC TF215 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone.  FEATURES * Good voltage characteristics and transient characteristics.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF215 Preliminary JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC TF215 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone.  FEATURES * Good voltage characteristics and transient characteristics.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF2123 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  DESCRIPTION The UTC TF2123 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone

CAPACITOR MICROPHONE

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF2123 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  DESCRIPTION The UTC TF2123 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS „ DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone

SOT-113S

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone

PowerDI5060-8L

Abstract: DFN1006-2 DFN1006-3 DFN1006H4-2 DFN1006H4-3 DFN1310H4-6 DFN1411-3 DFN1612-6 DFN1616-6 DFN1616-8
Contextual Info: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E

L30ESD24VC3_2

Abstract: SOT23-6L L30ESD24VC3-2
Contextual Info: LITEON-SEMI ESD Application • • • • Computing Portables Consumer Electronics. Networking & Comm. Portable Products Cellular Phone Speaker & MIC. MIC L13ESD5V0CE2 LEF01016F6-2 LEF03216F6-2 ANT. L10ESDL5V0CE2 External Memory L15ESDL5V0D6-4 LCD & Backligt

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF218 JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC TF218 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone specially.  FEATURES * Good voltage characteristics and transient characteristics.

TF218

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF218 JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC TF218 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone specially.  FEATURES * Good voltage characteristics and transient characteristics.

E3 SOT523

Abstract: DMN5L06TK
Contextual Info: Green DMN5L06TK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: D5V0L1B2LP3 LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Features Mechanical Data • Ultra-Small, Low Profile Leadless Surface Mount Package 0.6 *  0.3 * 0.3mm  NEW PRODUCT  Case: X3-DFN0603-2 Case Material: Molded Plastic, “Green” Molding Compound. UL

Contextual Info: D5V0L1B2S9 LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Product Summary Features NEW PRODUCT VBR min 6V Ipp max 6A • Cin typ 15pF Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV  Description This new generation TVS is designed to protect sensitive electronics

DFN1616-8

Abstract: DFN1006-2 DFN1006-3 DFN1006H4-2 DFN1006H4-3 DFN1310H4-6 DFN1411-3 DFN1612-6 DFN1616-6 620E
Contextual Info: Package Outline Dimensions Surface Mount Packages DFN1006-2 / DFN1006H4-2 DFN1006H4-2 DFN1006-2 G H A R B C N D Dim Min Max Typ Min Max Typ A 0.95 1.075 1.00 0.95 1.075 1.00 B 0.55 0.675 0.60 0.55 0.675 0.60 C 0.45 0.55 0.50 0.45 0.55 0.50 D 0.20 0.30 0.25

DMN53D0LT

Contextual Info: DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary ID TA = +25°C • N-Channel MOSFET • Low On-Resistance 350 mA • Very Low Gate Threshold Voltage 200 mA • Low Input Capacitance • Fast Switching Speed • Low Input/ Output Leakage

DMN33D8L

Contextual Info: DMN33D8LT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ID TA = +25°C 200 mA 115 mA RDS(ON) 5 Ω @ VGS = 4V 7 Ω @ VGS = 2.5V 30V NEW PRODUCT NEW PRODUCT Features Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching

.H2 sot89

Abstract: DFN1006-2 DFN1006-3 DFN1006H4-2 DFN1006H4-3 DFN1310H4-6 DFN1411-3 DFN1612-6 DFN1616-6 DFN1616-8
Contextual Info: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E

do-201 package

Abstract: DFN2020-3 SOD 523 0.85-1.25 DP SOT523 DFN1006-3 dfn3030-8 DFN1006-2 DFN1006H4-2 GBJ 1005 DFN1310H4-6
Contextual Info: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E

AA112A

Abstract: IPC-7351A
Contextual Info: PACKAGE OUTLINE DIMENSIONS AP02002 SUGGESTED PAD LAYOUT(AP02001) (Based on IPC-7351A) Table of Contents X4-DFN0402‐2/SWP . 10

OZ8118

Abstract: ps223 SD CARD CONTROLLER CMD26 intel g31 msi G993P1UF RTL811C BGA969 5KR04 apa2057a intel g41 msi
Contextual Info: A B C D MS-1431 VER : 0.A E DC JACK & Selector Page 27 1 1 SYS POWER Penryn Page 3,4 HOST +3V +5V FSB 667/800/1066 TPS51120 Page 29 RGB CRT NORTH BRIDGE Page 15 LVDS LVDS 2 NB9M PCIE2.0 Page 15 HDMI HDMI INTEL Dual Channel DDRII 667/800 MHZ Page 31 2 DDR-SODIMM0

SOT-95

Abstract: TO-252-4L sc59 dfn3030-8 MSOP-10 powerdi 123 DFN1006-3 DFN1006H4-2 WL-CSP1010H6-4 DFN1310H4-6
Contextual Info: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E