E3 SOT363 Search Results

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

Contextual Info: GMF05LC Vishay Semiconductors ESD Protection Diode Array 6 5 4 1 2 3 VY Features CW • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 5 A (tp = 8/20 s) • Small package for use in portable electronics

GMF05C

Abstract: GMF05C-GS08
Contextual Info: GMF05C Vishay Semiconductors ESD Protection Diode Array Features 6 5 4 1 2 3 VY • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 12 A (tp = 8/20 µs) • Small package for use in portable electronics

GMF05C

Abstract: GMF05C-GS08
Contextual Info: GMF05C Vishay Semiconductors ESD Protection Diode Array Features 6 5 4 1 2 3 VY • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 12 A (tp = 8/20 s) • Small package for use in portable electronics

GMF05LC

Abstract: GMF05LC-GS08
Contextual Info: GMF05LC Vishay Semiconductors ESD Protection Diode Array 6 5 4 1 2 3 VY Features CW • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 5 A (tp = 8/20 s) • Small package for use in portable electronics

Contextual Info: GMF05LC Vishay Semiconductors ESD Protection Diode Array 6 5 4 1 2 3 VY Features • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 5 A (tp = 8/20 µs) • Small package for use in portable electronics

GMF05C

Abstract: GMF05C-GS08
Contextual Info: GMF05C Vishay Semiconductors ESD Protection Diode Array Features 6 5 4 1 2 3 VY • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 12 A (tp = 8/20 s) • Small package for use in portable electronics

Contextual Info: GMF05MC Vishay Semiconductors Low Capacitance ESD Protection Diode Array 6 5 4 1 2 3 VY Features CW • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 7 A (tp = 8/20 s) • Small package for use in portable electronics

GMF05MC

Abstract: GMF05MC-GS08
Contextual Info: GMF05MC Vishay Semiconductors Low Capacitance ESD Protection Diode Array 6 5 4 1 2 3 VY Features CW • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 7 A (tp = 8/20 µs) • Small package for use in portable electronics

Contextual Info: MMBD4148TW / BAS16TW SURFACE MOUNT FAST SWITCHING DIODE ARRAY Features Mechanical Data • Fast Switching Speed • • Ultra-Small Surface Mount Package • • For General Purpose Switching Applications Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound.

Contextual Info: MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Planar Die Construction   Ideal for Medium Power Amplification and Switching  Case Material: Molded Plastic, “Green” Molding Compound,  Ultra-Small Surface Mount Package

Contextual Info: MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • • • • • • • • • • Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020

Contextual Info: DMN66D0LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS RDS(ON) 60V 6Ω @ VGS = 5V 5Ω @ VGS = 10V Features and Benefits ID TA = +25°C 90mA 115mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching

Contextual Info: DMMT3906W 40V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • BVCEO > -40V • • IC = -200mA High Collector Current • • • Pair of PNP Transistors That Are Intrinsically Matched Note 1 2% Matching on Current Gain (hFE)

Contextual Info: DMMT3904W 40V MATCHED PAIR NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • BVceo > 40V IC = 200mA high Collector Current • • • Pair of NPN transistors that are intrinsically matched Note 1 2% Matching on Current Gain (hFE) •

Contextual Info: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the

Contextual Info: DSS8110Y 100V NPN LOW SATURATION TRANSISTOR IN SOT363 Features Mechanical Data • BVCEO > 100V  Case: SOT363  IC = 1A high Continuous Collector Current   ICM = 3A Peak Pulse Current Case Material: Molded Plastic, “Green” Molding Compound.

Contextual Info: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the

BC847PN

Contextual Info: BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction   Two Internally Isolated NPN/PNP Transistors in One Package   Ideal for Medium Power Amplification and Switching Case: SOT363

BC847B

Contextual Info: BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction   Two Internally Isolated NPN/PNP Transistors in One Package   Ideal for Medium Power Amplification and Switching Case: SOT363

DMN65D

Abstract: DMN65D8LDW DMN65D8LDW-7
Contextual Info: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the

Transistor 3904 Datasheet

Contextual Info: MMDT3946 40V COMPLEMENTARY NPN-PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • • • • • • • • Complementary Pair One 3904-Type NPN One 3906-Type PNP Ultra-Small Surface Mount Package Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching

Contextual Info: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) Package 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching