E23FL7 Search Results

511s

Contextual Info: Ratings and c h arac te ristic s of Fuji I G B T M B T 2 M B I T 5 J — 0 6 O Module (TENTATIVE) 1. Outline Drawing Unit : a* * Isolation Voltage : AC 2500 V 1 limite ìli .l i- 2 : ’ el1li 111 lìti 1|S- 5* sÏ S i r M141* Ww Tab type terminals ¡Ê iïlll

TS808C04

Abstract: ts808c WAAI
Contextual Info: T S 808C 04 3 oa ' > 3 'y h + — V T ¥ 4 si'i'tjm-F K SCHOTTKY BARRIER DIODE l Features • "JS6 Surface m ount device. • te V F Low V f • m m m m Wy? F *< *1=# t i & i . ' C on nection D iagram Super high speed sw itching. • 7 V -*'-a w e « *« utt

Contextual Info: I- 2 COLLMER SEIUCONÏUCTOR INC S K 1 5 1 2 4flE D • 52307=12 0D01fl22 C1S2 Scope This specifies Fuji power MOSFET 2 S K 1 5 1 2 2. Outline I Construction I! ) Application HI) Outview N-channel enhanceaent mode power MOSFET for switching

Contextual Info: FU JI 2SK2638-01MR N-channel MOS-FET FAP-IIS Series 0,65ß 450V > Features 10A 50W > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Repetitive Avalanche Rated

Contextual Info: 2 2 3 a ? “Ì2 0004M01 27b -* - S P E C I F I C A T I O N 1G B T DEVICE NAME : TYPE NAME : SPEC. No. : MS 5 F 3 5 1 4 DATE : Jun.-25-1996 1M B H 1 5 D - 1 2 0 Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME