E2 MARKING SOT Search Results

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A

DIN 6784 c1

Abstract: BCR108S BFS17S E6327 VPS05604
Contextual Info: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

VPS05604

Abstract: bfs 11
Contextual Info: BFS 17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363

ic7001

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

183S

Abstract: Q62702-C2377
Contextual Info: BCR 183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1 = 10kΩ, R2 = 10kΩ Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363

6c2 transistor

Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Contextual Info: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor

marking JC

Abstract: BAV23S marking sot23 marking JB sot23 jb SOT23 MARKING JC BAV23S JB SOT23 E2- marking marking JB sot23
Contextual Info: SEMICONDUCTOR BAV23S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking JC 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark JC BAV23S - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

sot23 marking JB

Abstract: marking 12 PG12GCS23 marking 5B marking EA SOT23 marking EA 22 SOT23 marking 5b sot23
Contextual Info: SEMICONDUCTOR PG12GCS23 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 12 1 0 A 2. Marking 2 No. Item Marking Description ① Device Mark 12 PG12GCS23 ② * Lot No. 0A 2007. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

H8 SOT-23 bav99

Abstract: BAV99 H8 marking H8 H8 SOT-23 SOT23 H8 H8 marking marking H8 SOT-23 bav99 marking BAV99 JB SOT23
Contextual Info: SEMICONDUCTOR BAV99 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking H8 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark H8 BAV99 - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

marking m1

Abstract: KTK919S SOT23 MARKING M1 M1 MARKING sot-23 Marking m1 sot23 marking JB
Contextual Info: SEMICONDUCTOR KTK919S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. M1 0 1 2. Marking 2 Item Marking Description Device Mark M1 KTK919S * Lot No. 01 2006. 1st Week Note * Lot No. marking method Lot No. Description 01, 02 .51, 52

KMB4D0N30SA

Abstract: JB Sot23 H8 SOT-23
Contextual Info: SEMICONDUCTOR KMB4D0N30SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. ① ② KNA 5 1 2. Marking 2 Item Marking Description Device Mark KNA KMB4D0N30SA - - - * Lot No. 51 2006. 51 Week [0:1st Character, 8:2nd Character] Note * Lot No. marking method

2N7002K

Abstract: E5 marking sot23 6 wc sot23 marking EA SOT23 E2- marking h8 marking sot23 marking JB E5 Marking Marking E5 JA MARKING SOT23
Contextual Info: SEMICONDUCTOR 2N7002K MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. WC 0 1 2. Marking 2 Item Marking Description Device Mark WC 2N7002K * Lot No. 01 Manufacturing date Year/Week Note) * Lot No. marking method * : Lot No. marking method

KMA2D4P20SA

Contextual Info: SEMICONDUCTOR KMA2D4P20SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. ① ② KB2 0 1 2. Marking 2 Item Marking Description Device Mark KB2 KMA2D4P20SA - - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KMA3D0N20SA

Abstract: SOT23 marking j1 marking A1 6 H8 SOT-23
Contextual Info: SEMICONDUCTOR KMA3D0N20SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. KNC 0 6 2. Marking 2 Item Marking Description Device Mark KNC KMA3D0N20SA - - - * Lot No. 06 2006. 06 Week [0:1st Character, 6:2nd Character] Note * Lot No. marking method

KMA3D6N20SA

Abstract: NO1A
Contextual Info: SEMICONDUCTOR KMA3D6N20SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. KNC 1 A 2. Marking 2 Item Marking Description Device Mark KNC KMA3D6N20SA * Lot No. 1A 2007. 11 Week [1:1st Character, A:2nd Character] Note * Lot No. marking method

KMB3D0P30SA

Contextual Info: SEMICONDUCTOR KMB3D0P30SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking KPA 1 No. 0 8 2. Marking 2 Item Marking Description Device Mark KPA KMB3D0P30SA - - - * Lot No. 08 2006. 08 Week [0:1st Character, 8:2nd Character] Note * Lot No. marking method

PG05BUS23

Abstract: MARKING JB SOT-23
Contextual Info: SEMICONDUCTOR PG05BUS23 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. 5BU 0 1 2. Marking 2 Item Marking Description Device Mark 5BU PG05BUS23 * Lot No. 0A 2007. 1st Week [0:1st Character, A:2nd Character] Note * Lot No. marking method

sot-23 MARK KND

Abstract: marking 5B KMB2D0N60SA marking H8 SOT-23 SOT23 MARKING 5B sot-23 MARK e5 marking 5b sot23
Contextual Info: SEMICONDUCTOR KMB2D0N60SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. KND 0 6 2. Marking 2 Item Marking Description Device Mark KND KMB2D0N60SA - - - * Lot No. 06 2006. 06 Week [0:1st Character, 6:2nd Character] Note * Lot No. marking method

transistor marking JB

Abstract: MMBTA44 JB SOT23 SOT23 MARKING 5B marking H8 SOT-23
Contextual Info: SEMICONDUCTOR MMBTA44 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. APX 0 1 2. Marking 2 Item Marking Description Device Mark APX MMBTA44 hFE Grade - - * Lot No. 01 2002. 1st Week Note * Lot No. marking method Lot No. Description

marking H6 sot 23

Abstract: marking H6 BAW56 marking EA SOT23 SOT23-5 marking H6
Contextual Info: SEMICONDUCTOR BAW56 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking H6 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark H6 BAW56 - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: Transistors IC SMD Type Product specification BC847PN • Features SOT-363 ● Two internal isolated NPN/PNP Transistors in one package Unit: mm +0.1 -0.1 1.3 4 2 3 E2 +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.05 0.95-0.05 B2 0.1max 1 C1 0.36 +0.15 2.3-0.15

transistor 2222a

Abstract: K27 npn TRANSISTOR 2222A NPN K27 pnp k27 transistor MARKING K27 tr 2222a
Contextual Info: MMDT2227M Lead-free Green COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · A Complementary Pair Epitaxial Planar Die Construction C2 B1 SOT-26 E1 One 2222A Type NPN , One 2907A Type (PNP) · · · B C Ideal for Low Power Amplification and Switching

marking TRANSISTOR SMD nf c1

Contextual Info: Transistors SMD Type NPN/PNP Complementary Silicon Transistor Array BC847PN • Features SOT-363 ● Two internal isolated NPN/PNP Transistors in one package Unit: mm +0.1 -0.1 1.3 4 2 3 E2 +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.05 0.95-0.05 B2 0.1max