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    TE Connectivity HT-SCE-1-1/2-2.0-9

    Cable Markers Printable Heat Shrink Fluoropolymer White
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    Master Electronics HT-SCE-1-1/2-2.0-9 971
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    Avnet Americas HT-SCE-1-1/2-2.0-9 Box 36 Weeks, 4 Days 2,000
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    Newark () HT-SCE-1-1/2-2.0-9 Pack 1
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    Interstate Connecting Components HT-SCE-1-1/2-2.0-9
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    Powell Electronics HT-SCE-1-1/2-2.0-9 95 10
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    FDH Electronics HT-SCE-1-1/2-2.0-9 1
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    TE Connectivity HT-SCE-1-1/2-2.0-9 249 1
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    TE Connectivity SBCHE1122RJ

    BCHE 11 W 22R 5%<br/>Ceramic Cased Power Resistors<br/>Fixed Resistor
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    Master Electronics SBCHE1122RJ 544
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    TE Connectivity SBCHE1122RJ 860 1
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    Phoenix Contact CAPAROC-E1-12-24DC/1A

    CAPAROC E1 12-24DC/1A
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    Master Electronics CAPAROC-E1-12-24DC/1A
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    TE Connectivity HT-SCE1-1/2-2-S2-0-CS7210

    MOQ Reduction
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    TE Connectivity AVH19LSFE1122604

    AVH19 FLT SS LK RNG WHT 12V26A MOQ Reduction
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    E1122 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    znr 471 varistor

    Abstract: ZNR 471 ZNR 391 znr3 varistor znr 431 znr 270 ZNR 241 varistor SEC 471 10 znr 621 varistor znr e 471
    Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.


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    erze07f331erze07f511erze08f201erze08f331+16erze08f471erze08f561erze11f201erze11f331erze11f561erze11f681znr 471 varistorznr 471znr 391znr3 varistorznr 431znr 270znr 241varistor sec 471 10znr 621 varistorznr e 471 PDF

    Contextual Info: Package Information www.vishay.com Vishay Siliconix SOIC WIDE-BODY : 28-LEADS 0.06 0.002D CAVITY NO. 0.3525 0.001 0.334 0.005 28 27 26 25 24 23 22 21 20 19 18 R0.004 17 16 15 0.010 0.1475 0.001 R0.008 0.295 0.001 R0.009 1 2 3 4 5 6 7 8 9 10 11 12 13 14 4°


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    28-leadse11-2209-rev01-aug-11 PDF

    Contextual Info: Package Information www.vishay.com Vishay Siliconix SC-75A: 3-LEADS L2 A 2 D 1 D bbb D e2 2X D 3 L1 L B1 b1 3 e1 3 E/2 1 2 E E1 1 1 bbb D 1 2 C bbb C D 4 ddd M C B 3 2X e3 B1 b1 2XB1 A– B B B 2X D C With Tin Planting c1 bbb D Section B-B 5 A A2 Base Metal


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    sc-75ae11-2210-rev08-aug-11 PDF

    Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated


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    si1012crsc-75a2002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: Si1021R Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 SC-75A (SOT-416) G 1 APPLICATIONS 3 S • Halogen-free According to IEC 61249-2-21 Definition


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    si1021rsc-75aot-4162002/95/ec+32011/65/eujs709a02-oct-12 PDF

    7133-1

    Abstract: si1022r
    Contextual Info: Si1022R Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) 60 1.25 at VGS = 10 V 1 to 2.5 330 SC-75A (SOT-416) G 1 3 S 2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


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    si1022r2002/95/ecsc-75aot-416+4si1022r-t1-ge32011/65/eu12-mar-127133-1 PDF

    thyristor CSG2001-14A04

    Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.


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    erze05ferze07ferze08ferze10f+2erze11fthyristor csg2001-14a04 PDF

    74595

    Contextual Info: Si1046R Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Qg (Typ.) 0.420 at VGS = 4.5 V ID (A)a 0.606 0.501 at VGS = 2.5 V 0.505 0.92 0.660 at VGS = 1.8 V 0.15 • Halogen-free According to IEC 61249-2-21 Definition


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    si1046r2002/95/ecsc75-3lsi1046r-t1-ge3+32011/65/eu12-mar-1274595 PDF

    Contextual Info: DG406, DG407 www.vishay.com Vishay Siliconix 16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers DESCRIPTION FEATURES The DG406 is a 16 channel single-ended analog multiplexer designed to connect one of sixteen inputs to a common output as determined by a 4-bit binary address. The DG407


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    dg406dg40716-ch/dual2002/95/ec+22011/65/eujs709a PDF

    E112260100

    Contextual Info: AX12260 AMD LX PC/104 CPU Module with VGA/ TTL, USB DoM and PC/104-Plus Expansion PCI104 USB 1/2 Ethernet Features Low power fanless AMD LX800 processor AMD CS5536AD 4 USB 2.0 ports for high speed peripherals & DoM PC/104-Plus slot for 16-bit ISA, 1 x 32-bit PCI expansion


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    ax12260pc/104pc/104-pluspci104+5lx800cs5536ad16-bit32-bite112260100 PDF

    E8471

    Abstract: E14201 E8621 E14391 E11471 ZNR E14112 E11102 E14361 E14431 znr 431
    Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.


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    e8471e14201e8621e14391+6e11471znr e14112e11102e14361e14431znr 431 PDF

    Contextual Info: Si1032R/X Vishay Siliconix N-Channel 1.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • Low-Side Switching


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    si1032r/x2002/95/ecsc-75asc-89+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: Si1021R Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 SC-75A (SOT-416) G 1 APPLICATIONS 3 S • Halogen-free According to IEC 61249-2-21 Definition


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    si1021rsc-75aot-4162002/95/ec+22011/65/eu12-mar-12 PDF

    Contextual Info: Si1046R Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.420 at VGS = 4.5 V ID (A) 0.606 Qg (Typ.) 0.501 at VGS = 2.5 V 0.505 0.92 0.660 at VGS = 1.8 V 0.150 a APPLICATIONS SC75-3L G • Drivers: Relays, Solenoids, Lamps, Hammers, Displays,


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    si1046rsc75-3lsi1046r-t1-ge32002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: Si1031R/X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 8 at VGS = - 4.5 V - 150 12 at VGS = - 2.5 V - 125 15 at VGS = - 1.8 V - 100 20 at VGS = - 1.5 V - 30 • Halogen-free According to IEC 61249-2-21


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    si1031r/x2002/95/ecsc-75asi1031r+3sc-89si1031x11-mar-11 PDF

    2031-5006-00

    Abstract: Datasheet of PCB mounted 5408 diode 1A diode 82MMCX-50-0-1 R125403 BK 1085 2052-5674-02 ASTM D-3307 82-4352 2031-5006-02 Kings Electronics RF CONNECTOR CATALOG
    Contextual Info: Emerson Network Power Connectivity Solutions is a global manufacturer of a broad line of connectivity products and services industrial applications. Connectivity Solutions delivers custom-engineered products and solutions with best-in-class service and support and customer-focused offers such as quick-turn prototyping, samples and supply chain management.


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    rfc042031-5006-00datasheet of pcb mounted 5408 diode 1a diode82mmcx-50-0-1+7r125403bk 10852052-5674-02astm d-330782-43522031-5006-02kings electronics rf connector catalog PDF

    septar socket

    Contextual Info: Tube Sockets Alphabetical Index Johnson Components, Inc. sockets are designed to provide secure retention of the tube and positive, low-resistance contact between tube pins and socket contacts. Johnson Components, Inc., one of the few companies still making


    OCR Scan
    for-423dc-200qq-b-750qq-c-533+3rk-48a5-19septar socket PDF

    Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated


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    si1012crsc-75a2002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: DG506B, DG507B Vishay Siliconix Precision 16-Channel/Dual 8-Channel CMOS Analog Multiplexers DESCRIPTION FEATURES The DG506B and DG507B are high performance analog multiplexers. Their ultra-low switch charge injection, low channel capacitance, and low leakage level allows them to


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    dg506bdg507b16-channel/dual16-channel+22011/65/eu2002/95/ec PDF

    Contextual Info: Si1031R/X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 8 at VGS = - 4.5 V - 150 12 at VGS = - 2.5 V - 125 15 at VGS = - 1.8 V - 100 20 at VGS = - 1.5 V - 30 • Halogen-free According to IEC 61249-2-21


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    si1031r/x2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3


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    si1012rsi1012xsc-75asc-89+42002/95/ec2011/65/eujs709a02-oct-12 PDF

    AN203

    Abstract: R0004 DG406DJ-E3
    Contextual Info: DG406, DG407 Vishay Siliconix 16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers DESCRIPTION FEATURES The DG406 is a 16 channel single-ended analog multiplexer designed to connect one of sixteen inputs to a common output as determined by a 4-bit binary address. The DG407


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    dg406dg40716-ch/dual2011/65/eu+52002/95/ec12-mar-12an203r0004dg406dj-e3 PDF

    SC-89-3

    Contextual Info: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


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    si1013r/x2002/95/ecsc-75asc-89+4ot-416si1013r2011/65/eusc-89-3 PDF

    SI1012X-T1-GE3

    Abstract: si1012r-t1-ge3
    Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated


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    si1012r/x2002/95/ecsc-75asc-89+42011/65/eu12-mar-12si1012x-t1-ge3si1012r-t1-ge3 PDF