PD45128163
Abstract: uPD45128163G5-A10I-9JF uPD45128163G5-A10LI-9JF uPD45128163G5-A75I-9JF uPD45128163G5-A75LI-9JF uPD45128163G5-A80I-9JF uPD45128163G5-A80LI-9JF PD45128163-I
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163-I 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description EO The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 (word × bit × bank).
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pd45128163-i128m-bitpd45128163728-bit+854-pine0346n10upd45128163g5-a10i-9jfupd45128163g5-a10li-9jfupd45128163g5-a75i-9jfupd45128163g5-a75li-9jfupd45128163g5-a80i-9jfupd45128163g5-a80li-9jf
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PD45128163
Abstract: uPD45128163G5-A10I-9JF uPD45128163G5-A10LI-9JF uPD45128163G5-A75I-9JF uPD45128163G5-A75LI-9JF uPD45128163G5-A80I-9JF uPD45128163G5-A80LI-9JF PD45128163-I
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163-I 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 (word × bit × bank).
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Original
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pd45128163-i128m-bitpd45128163728-bit+954-pinm01e0107e0346n10upd45128163g5-a10i-9jfupd45128163g5-a10li-9jfupd45128163g5-a75i-9jfupd45128163g5-a75li-9jfupd45128163g5-a80i-9jfupd45128163g5-a80li-9jf
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