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    PD45128163

    Abstract: uPD45128163G5-A10I-9JF uPD45128163G5-A10LI-9JF uPD45128163G5-A75I-9JF uPD45128163G5-A75LI-9JF uPD45128163G5-A80I-9JF uPD45128163G5-A80LI-9JF PD45128163-I
    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163-I 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description EO The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 (word × bit × bank).


    Original     		PD45128163-I 128M-bit PD45128163 728-bit 54-pin E0346N10 uPD45128163G5-A10I-9JF uPD45128163G5-A10LI-9JF uPD45128163G5-A75I-9JF uPD45128163G5-A75LI-9JF uPD45128163G5-A80I-9JF uPD45128163G5-A80LI-9JF PD45128163-I PDF

    PD45128163

    Abstract: uPD45128163G5-A10I-9JF uPD45128163G5-A10LI-9JF uPD45128163G5-A75I-9JF uPD45128163G5-A75LI-9JF uPD45128163G5-A80I-9JF uPD45128163G5-A80LI-9JF PD45128163-I
    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163-I 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 (word × bit × bank).


    Original     		PD45128163-I 128M-bit PD45128163 728-bit 54-pin M01E0107 E0346N10 uPD45128163G5-A10I-9JF uPD45128163G5-A10LI-9JF uPD45128163G5-A75I-9JF uPD45128163G5-A75LI-9JF uPD45128163G5-A80I-9JF uPD45128163G5-A80LI-9JF PD45128163-I PDF