E 430 JFET Search Results

U1897

Abstract: 2N4091-93 2N4391-93 2N4856-61 2N4856A-61A U200 U200-02 U201 U202 pn4302-18
Contextual Info: U202 U201 U200 n-channel JFETs designed for a . S ilic o n ix Performance Curves NC See Section 5 Analog Switches B E N E F IT S • Low Insertion Loss ^DS on < 5 0 S2 (U202) • Good Off-Isolation Commutators Choppers •D(off) < 1 nA TO-18 See Section 7

j108 EQUIVALENT

Contextual Info: J108 SE R IE S N-Channel JFETs o n ix Jf3J Tt Sinilic c o rp o ra te d The J108 Series is designed with high-performance analog switching applications in mind. It features low on-resistance, good off-isolation, and fast switching. The TO-92 package affords low-cost and a wide range

2N5115

Contextual Info: P-Channel JFET Switch calocfic CORPORATION V 2N5114-2N5116 GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS Ta » 25°C unless otherwise noted Ideal for Inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and ±10VAC

Contextual Info: APT30M70BVR A dvanced P o w er Te c h n o l o g y 300V 48A 0.070Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

BO 615 DIODE

Abstract: E 212 JFET
Contextual Info: A d v a n c ed P o w er Tec h n o lo g y ' APT30M70BVR 300V 48A 0.070Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channe! enhancement mode power MOSFETs, This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

P-37515

Abstract: jan,tx series semiconductors
Contextual Info: T E M IC 2N5114JAN/JANTX/JANTXV Series Semiconductors P-Channel JFETs 2N5114JAN/JANTX/JANTXV 2N5115JAN/JANTX/JANTXV 2N5116JAN/JANTX/JANTXV Product Summary Part Number VGS 0fF (V) rps(on) Max (Ö) IdìoH) Typ (pA) 2N5114 5 to Î0 75 -10 16 2N5115 3 to 6 100

Contextual Info: 2N5114J AN/J ANTX/JANTXV Series Vishay Siliconix P-Channel JFETs 2N 5114 J AN/J ANTX/JANTXV 2N 5115J AN/J ANTX/JANTXV 2N 5116 J AN/JANTX/J ANTXV PRODUCT SUMMARY Part Number VGS off (V) r D S(on) Max (£2) Id (off) TVp (pA) toN Max (ns) 2N5114 5 to 10 75 -1 0

2N5116

Abstract: 2N4856A 2N5114 2N5115 P-Channel JFETs
Contextual Info: 2N5114JAN/JANTX/JANTXV Series Vishay Siliconix P-Channel JFETs 2N5114JAN/JANTX/JANTXV 2N5115JAN/JANTX/JANTXV 2N5116JAN/JANTX/JANTXV PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Max (ns) 2N5114 2N5115 5 to 10 75 –10 16 3 to 6

R/CHN 745 diode

Abstract: diode 745
Contextual Info: A PT50 M50 PV R A dvanced W.\A p o w e r Te c h n o lo g y “ • R soov 74.5A o.osow POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also

Contextual Info: • R A dvanced W .\A A PT40 M35 PV R pow er Te c h n o lo g y " 400v 89a o.o35w POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also

cadstar pcb

Abstract: cadstar shape synario cadstar ALLEGRO PART NUMBER INDEX
Contextual Info: Synario ECS and Board Entry Index A Allegro Add symbol attributes . 3-38 Adding a netlister to a menu . 3-28, 3-41, 3-42 Allegro ECO Changes . 3-49

Contextual Info: A PT60 M75 PV R • R A dvanced W .\A p o w e r Te c h n o lo g y " 600v 60.sa 0.075w POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also

2n5114

Contextual Info: 2N5114/5115/5116 Vishay Siliconix P-Channel JFETs PRODUCT SUMMARY Part Number v GS off (V) r DS(on) Max (Q ) 'o(otf) Typ (PA) toN Max(ns) 2N5114 5 to 10 75 -10 16 2N5115 3 to 6 100 -10 30 2N5116 1 to 4 150 -10 42 FEATURES BENEFITS APPLICATIONS • Low On-Resistance: 2N 5 1 1 4 <7 5 Q

Contextual Info: T e m ic sMiconix_ 2N5114/5115/5116 P-Channel JFETs Product Summary Part Number 2N5114 2N5115 2N5116 Vg S oB (V) 5 to 10 3 to 6 1 to 4 Max (Q> 75 100 150 r DS(<m> toN Max (ns) 16 30 42 Id (oB) Typ (pA) -1 0 -10 -10 2N5116, For applications information see AN104, page 12-21.

APT10050LVR

Contextual Info: APT10050LVR • R A dvanced W .\A pow er Te c h n o lo g y " 1000v 21 a o.sooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

u1897

Abstract: u1898 U1899 RU430
Contextual Info: SILICONIX INC l&E ]> • 0254735 QG13TÖS Ì ■ fn rS ilic o n ix U1897 SERIES JLw in c o rp o ra te d ~T’-3 £ p ’- Z .éT N-Channel JFET The U1897 Series is a multi-purpose n-channel JFET designed to economically enhance circuit performance. These devices are especially well

Contextual Info: APT10050LVR A dvanced P o w er Te c h n o l o g y 1000V 21A 0.500Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: 2N5114JAN/JANTX/JANTXV Series Vishay Siliconix P-Channel JFETs 2N5114JAN/JANTX/JANTXV 2N5115JAN/JANTX/JANTXV 2N5116JAN/JANTX/JANTXV PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Max (ns) 2N5114 2N5115 5 to 10 75 –10 16 3 to 6

SM 96 diode

Contextual Info: A dvanced PO W ER Te c h n o lo g y A PT10050JVFR iooov POWER MOS V 19 A o.sooq FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: ADVANCED POW ER Te c h n o lo g y A P T 1000V 10050 J V R 19A 0.5000 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT10050LVFR A D V A N CED PO W ER Te c h n o l o g y 1000V POWER MOS V 21A 0.500Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

dual fet U235

Abstract: 2N5566 "cross reference" FET 2N5459 2N3824 2N4393 2N3B19 2N5566 U235 jfet 133 2n5452
Contextual Info: N-Channel Dual JFETs 2.5 2.5 2.5 50 50 50 0.5 0.5 0.5 2N5564 N N N N N N N 71 71 71 78 78 78 99 0.1 0.1 0.1 0.1 0.1 0.1 0.15 3.0 3.0 3.0 5.0 5.0 5.0 4.0 40 40 40 25 2000 2000 2000 - 5.0 5.0 5.0 7.0 7.0 5.0 12 24 30 30 30 40 40 40 30 7500 7500 7500 5000 5000

P-Channel JFETs

Abstract: "P-Channel JFETs"
Contextual Info: Temic 2N5114/5115/5116 S e m i c o n d u c t o r s P-Channel JFETs Product Summary Part Number Imoff T y p pA) 5 to 10 75 -10 16 2N5115 3 to 6 100 -10 30 2N5U6 1 to 4 150 -10 42 VGS(off) (V) Features • • • • • Ion Max (ns) n>s<oii) Ma* (Q) 2N5114

DN5565

Abstract: DN5564 2N5047 2N5566 2N5911 DN5567 U412 2N5045 2N5564 2N5912
Contextual Info: N-Channel Dual JFETs 2.5 2.5 2.5 50 50 50 0.5 0.5 0.5 2N5564 N N N N N N N 71 71 71 78 78 78 99 0.1 0.1 0.1 0.1 0.1 0.1 0.15 3.0 3.0 3.0 5.0 5.0 5.0 4.0 40 40 40 25 2000 2000 2000 - 5.0 5.0 5.0 7.0 7.0 5.0 12 24 30 30 30 40 40 40 30 7500 7500 7500 5000 5000