E 13009 Search Results

transistor E 13009

Abstract: transistor d 13009 D 13009 K E 13009 L transistor 13009 e 13009 f J 13009 - 2 tr 13009 transistor MJE 13009 13008 TRANSISTOR
Contextual Info: i r ^53^31 D O n iS ? 1 D E V EL O P M EN T DATA MJE 13008 E 13009 This data she« contains advance information and specifications are subject to change without notice. N AMER P H I L I P S / D I S C R E T E ESE D -r-3 3 -1 3 SILICON DIFFUSED POWER TRAN SISTO RS

transistor E 13009

Abstract: transistor d 13009 n752 E13009 E 13009 J 13009 - 2 E 13009 TRANSISTOR motorola e 13009 p D 13009 K e 13009 l
Contextual Info: MOTOROLA SC XSTRS/R 1 S E 0 I ti3ti725M 0 G Ö 5 4 0 3 F r - MOTOROLA TECHNICAL DATA e s i g n e r s 3 * - / 3 MJE13008 MJE13009 SEMICONDUCTOR D 3 | D a t a . S h e e t 12 A M P E R E NPN SILICON POWER TRANSISTORS 3 0 0 and 4 0 0 V O L T S 100 W A T T S SWITCHMODE SE R IE S

Contextual Info: 4 T H IS DRAW ING IS U N P U B L IS H E D . 3 RELEASED BY TYCO ELECTRON ICS CORPORATION. COPYRIGHT FO R PU BLICATIO N 2 LOC - A L L R IG H T S R E S E R V E D . G DIST R E V IS IO N S 02 P LTR D D E S C R IP T IO N REV PER ECR 0 5 -0 0 9 5 9 9 D WIRE S I Z E

D 13009 K

Abstract: e 13009 f E 13009 2 J 13009 - 2 13009 D 13009 j 13009 13009 H npn 13009 13009 applications
Contextual Info: TELEFUNKEN ELECTRONIC 1 ?E ]> • a^SOCHb OOO'ifc.M1} 0 TE 13008- E 13009 T m iilF ty ilfiK lK l e le c tro n ic C rut*« Technotogw* r - 35-13 Silicon NPN Power Transistors Applications: Switching mode power supply, motor control and electronic ballast Features:

Contextual Info: E l e c t r i c a l S a f e t y P ro g r a m W o r k i n g T o g e t h e r F o r A S af e r W o r k p l a c e Checklist This audit checklist is designed to help you perform an electrical safety audit of your facility. Though there Audit may be multiple Woodhead solutions to a particular non-compliant condition, only basic Woodhead part numbers are listed in this document.

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. W V COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 6 4 3 2 - LOC DIST R E V IS IO N S DE EO ALL RIGHTS RESERVED. P LTR F MILITARY PART N U M B E R , 0 0 7 7 9 , M A R K E D ON O P P O S I T E SIDE.

13005

Abstract: E 13009 L 13001 dip40 package 13001 datasheet 13005 2 SSO24 transistor 13009 D-16 D-20
Contextual Info: IC Packaging Information Package Information Ceramic DIP, 8-16 Leads E 1 E1 2 D S A1 A L L2 b e L1 C b1 Q e1 Dim Millimeters Min Max Inches Min Max A A1 b b1 C D-8 D-14 D-16 E E1 e e1 L L1 L2 S-8 S-14 S-16 4.06 5.08 1.27 2.16 1.14 1.65 0.38 0.51 0.20 0.30

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: N o t e iT h is n u m e ric a l in d e x lists all cataloged parts by base noonly. Complete part nos. with prefixes and / or suffixes are shown on the page(s) indicated. Numerical Index Part No. 31818 31902 31906 31907 32050 32051 32053 32054 32055 32060

pht 094

Abstract: IH5341EPD N5352
Contextual Info: tS-Zsht ftHi- JH. y k i y j x i / k i D u al/Q u ad R F/V kteo S w itch es G t n t r t/ DvicWptfo/i T h t IH B 3 41 t n d r « HH5 3 5 E d u l l e n d q u n d S in g le p o le a- ng-fl th ro w fSPST} aw rtclraa d ff lig n e d &p a c ific a lly fo r aiwllchJng f l F a rid v id e o s i g n a l . M a i n e 's |K £341

Contextual Info: 2 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - - R E V IS IO N S RESERVED. G - LTR K2 D D E S C R IP T IO N R EVISED PER DATE DWN 21 M AR 12 KH E C O - 12 - 0 0 5 5 0 7 A PVD DR D

MAX276

Abstract: max2758 MAX274 MAX274ACNG MAX274ACWI MAX274BCNG MAX274BCWI MAX275 MAX274BENG MAX2758CPP
Contextual Info: 19-4191; Rev 3; 10/96 w^^SS"S'anua's Æ /J X IA I 4 th - a n d 8 th -O rd e r C o n tin u o u s -T im e A c tiv e F ilte rs The MAX274 and MAX275 are continuous-time active filters consisting of independent cascadable 2nd-order sections. Each section can implement any all-pole

max2758

Abstract: MAX276 MAX2758CPP 414x cga to vga by pic MAX274 MAX274ACNG MAX274ACWI MAX274BCNG MAX274BCWI
Contextual Info: 19-4191; Rev 3; 10/96 Æ /J X IA I w ^ ^ S S " S 'anua's 4 th - a n d 8 th -O rd e r C o n tin u o u s -T im e A c tiv e F ilte rs The MAX274 and MAX275 are continuous-time active filters consisting of independent cascadable 2nd-order sections. Each section can implement any all-pole

transistor C3866

Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Contextual Info: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

transistor E 13009

Abstract: transistor d 13009 transistor 13009 D 13009 K 13009 TRANSISTOR E 13009 L p 13009 e 13009 f e13009 transistor E 13009 l
Contextual Info: KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : K S E 13008 : KSE13009 Collector Emitter Voltage: KSE13008

diode D45C

Abstract: JE 800 transistor L146 IC BD800
Contextual Info: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*

Contextual Info: 4 T H IS D R A W IN G IS 2 3 U N P U B L IS H E D . RELEASED FO R ALL P U B L IC A T IO N RIG H TS LOC REVISIO NS G RESERVED. 4 D E S C R IP T IO N K1 D RE VISED PER DWN E C O -1 1 -0 0 4 9 1 7 1 1MAR11 APVD RK HMR D BODY SLEEVE 1\ STAMP AMP 5.26 + 0.08 [.2 0 7 + .003]

130094

Abstract: B152 B545
Contextual Info: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - - R E V IS IO N S RESERVED. G - LTR D E S C R IP T IO N K1 D R EVISED PER DATE ECO-11-004820 DWN MAR1 A PVD RK HMR D BODY SLEEVE 1\ S T A M P

PHE13009

Contextual Info: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The P H E 13009 is a silicon npn pow er sw itching tra n sisto r in the T 0 2 2 0 A B envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor control system s,

E 13007

Contextual Info: F\0 WE R T E?AN S I S X O E?S rsn DEISB S.A S W IT C H IN G * Prelim inary data i >- VCE0 min. V 400 375 400 450 400 300 350 350 375 400 700 400 300 350 350 .375_ 400 450 400 450 600 300 350 400 450 600 300 350 400 450 350 375 400 400 450 300 350 375 400

Contextual Info: 12 13 10 P A R T NO. ENGINEERING NO. C A B LE RANGE T H R E A D SIZE ’A ' HEX 'L 1 LENG TH L / 2 LENG TH 1300970250 364-90 .1 9 -,2 5 / 4 .8 -6 .4 3 /8 .88 / 22.4 4 .25 / 108.0 2.13 / 5 4.0 1300970225 364-30 .2 5 -,3 1 / 6 .4 -7 .9 ISO VIEW NPT S C A LE : F U LL

54HC08

Abstract: SR 13003 E 13007-1 54hc32 J006 13003 sd 9lc marking E 13007 E 13009 z EN 13009
Contextual Info: MIL-M-38510/652A 15 Ma* 1987 5 U P L K 3 E Ü I N G -MIL-M-38510/652 31 Ma r c h 1986 M I LI TARY S PECI FI CAT I ON »„ n „ . M I C R O C I R C U I T S , D I G I T A L , HIGH SPEED, CMOS, AND GATES, OR GATES, MONOLITHIC S I L I C O N , P O S I T I V E LOGIC

bta1b

Abstract: ANI 1015 1N3064 1N916 binary multiplier
Contextual Info: f MI L - M- 3 8 5 1 0 / 3 1 8 A 9 August 1983 SUPERSEDI NG MI L - M- 3 8 5 1 0 / 3 1 8 USAF 20 A p r i l 1979 MI L I T ARY S P E C I F I C A T I O N MI C R OC I R C U I T S , D I G I T A L , LOW POWER SCHOTTKY T T L , BI NARY MU L T I P L I E R , MONOLI THI C S I L I C ON