E 13005 L Search Results

EB 13005

Abstract: Transistors 13005 D MJE13004
Contextual Info: 7 ^ 5 ^ 5 3 7 0 0 5 ^ 1 0 5 1 13004 13005 • SGS-THOMSON ¡ILIOTa «! S G S-TH0MS0N MJE MJ E 3DE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon muitiepitaxial me­ sa NPN transistors in JedecTO -220 plastic package particularly intended for switch-mode applications.

BR 13005

Abstract: 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 E 13005 s BR 13005 A 13004 TE13004
Contextual Info: A E G CORP 1 ?E D O O a 'ì ' 4 2 b 0 0 0 1 1 .3 5 4 • TE 13004 ■TE 13005 1T11SFKKS1S ele ctro n ic Creat«TechnoJogies T - 3 3 MI Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

Transistors 13005 D

Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K
Contextual Info: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 MJE 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use

13005 equivalent

Abstract: 13005 mosfet 13005 equivalent internal L5988 74477 L5983 fsw25 C3225 CDRH8D28 L5988D
Contextual Info: L5983 1.5 A step-down switching regulator Features • 1.5 A DC output current ■ 2.9 V to 18 V input voltage ■ Output voltage adjustable from 0.6 V ■ 250 kHz switching frequency, programmable up to 1 MHz ■ Internal soft-start and inhibit ■ Low dropout operation: 100 % duty cycle

CDL13005

Abstract: transistor 13005 13005 13005 TRANSISTOR 13005 2 transistor CDIL 13005 transistor E 13005 13005a 13005 equivalent 13005 A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13005 TO-220 Plastic Package Used in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

13005 2 transistor

Abstract: D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT
Contextual Info: TD13004 • TD13005 Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology Very low dynam ic saturation • G lass passivation Very low operating tem perature • Very short sw itching times High reverse voltage

13005 A

Abstract: transistor 13005 transistor 13005 CIRCUIT 13005 s 13005 13005 TRANSISTOR 13005a 13005 2 transistor CDL13005 13005 power transistor
Contextual Info: CDL13005 TO-220 PLASTIC PACKAGE NPN PLASTIC POWER TRANSISTOR Used in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation upto Ta=25ºC

13005 2 transistor

Abstract: EB 13005 e13005 2 13005 TRANSISTOR npn transistor 13005 transistor E 13005 E13005 TRANSISTOR npn e13005 Transistor 13005- 2 transistor d 13005
Contextual Info: NPN SILICON TRANSISTOR KSE13004/13005 HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable lor Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : KSE13004 : KSE13005 Collector Emitter Voltage: KSE13004

13005 2 transistor

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13005 TO-220 Plastic Package Used in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

transistor 13005

Abstract: 13005 transistor d 13005 13005 2 transistor CD13005 13005f 13005 applications CDA marking IC
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION

13005 2 transistor

Abstract: transistor sr 13005 transistor d 13005 13005 A transistor
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION

D13005

Abstract: C13005 on 5262 e13005f 13005 ballast E13005 13005 st ballast with 13005 d13005e transistor E 13005
Contextual Info: ST13005 High voltage fast-switching NPN power transistor Datasheet − production data Features • Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting

transistor Electronic ballast 13005

Abstract: TD13005 transistor E 13005 SMD 13005 transistor transistor d 13005 13005 ballast 13005 TO-252 transistor 13005 CIRCUIT BR 13005 transistor 13005
Contextual Info: T e m ic TD13004 • TD13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • Very low dynamic saturation • Glass passivation • Very low operating temperature • Very short switching times

E13005

Abstract: LO 13005 e13005t E 13005 transistor Electronic ballast 13005 transistor E 13005 13004 TRANSISTOR TR 13005 transistor tr 13005 E 13005 TRANSISTOR
Contextual Info: Te m ic TE13004 • TE13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Pow er dissipation P,ot = 57 W • Glass passivation • Short sw itching tim es Applications

mje13005-1

Abstract: 13005 ballast 13007 transistor 13007 ic st24c02 13007 applications 13007 TRANSISTOR TS93C46 ballast with 13005 MJE-13007
Contextual Info: {ZT SGS-THOMSON CONSUMER Ä 7 # MD K I[LiOT©liî!IDËi RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA

in 3003 TRANSISTOR

Abstract: acrian RF POWER TRANSISTOR 3003 transistor hn10 transistor m 3003 g acrian inc
Contextual Info: 0182998 A C R I AN INC T? DE | D l f l E T T f l 0GDm ?S 7 |~D ^ - ^ - 0 7 W p i ti ü B S G E N ER A L isssbss 3003 D ESC R IPT IO N 3 W ATTS - 28 V O LTS 3000 MHz The 3003 is a common base transistor capable of providing 3 watts of C W R F output power at 3000

Contextual Info: SGS-THOMSON M G iœ iL IO T M ie S M JD 13005 HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR . . . . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. W V COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 6 4 3 2 - LOC DIST R E V IS IO N S DE EO ALL RIGHTS RESERVED. P LTR F MILITARY PART N U M B E R , 0 0 7 7 9 , M A R K E D ON O P P O S I T E SIDE.

me 13003

Abstract: ar 13003 HN62412P TU F 13003
Contextual Info: H I T A C H I / L O G I C / A R R A Y S / M E M DM DËJ 0013003 0 04E 13003 4496203 HITACHI/ L OG IC / A R R A Y S/ M E M HN62412P- -P V Ó -/ J -/ 3 " 131072-word x 16-bit/262144-word x 8-bit CM O S Mask Programmable Read Only Memory The HN62412P is a 2-Mbit CMOS mask-programmable ROM

IRF 850

Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Contextual Info: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400

BL8305A en

Abstract: 13005 ld1 13005 ballast ballast with 13005 sd 13005 power supply IRF830 APPLICATION 13005 mosfet transistor 13005 Window Discriminator SEC 13005
Contextual Info: BL8305A BALLAST CONTROL IC The ballast control IC BL8305A is an improved version of the BL8301. The BL8305A provides more functionality and is easier to use than previous IC BL8301. The BL8305A optimizes the compatibility of driving MOSFET half-bridge MHF

STD13005

Abstract: transistor E 13005 STD13005I 13005 power transistor pin diagram STD13005IS
Contextual Info: STD13005IS NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features • High speed switching • VCEO sus =400V • Suitable for Switching Regulator and Motor Control PIN Connection C B Ordering Information Type NO. Marking Package Code STD13005IS

Contextual Info: MJE13004 MJE13005 S G S -T H O M S O N ^□ gytemKgir^MOOs HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon multiepitaxial me­ sa NPN transistors in JedecTO-220 plastic package particularly intended for switch-mode applications. TO-220

NJM2930L-05

Contextual Info: LO W DROPOUT VOLTAGE REGULATOR NJM2930 The NJM2930 3-terminal positive voltage regulator features an ability to source 150mA of output current 100mA: LType with an input-output differential of 0.6V or less. Efficient use of low input voltages obtained, for example, from an