E 13005 Search Results

M22-6013005

Contextual Info: □RAWING N o ,!-M 2 2 -6 0 13005 IF IN DOUBT - A3!' S H E E T 2 OF 2 - EiLUJLl - 58,00 ± NOT TO S C A L E THIRD ANGLE PROJECTION 0,20 - A L L DIMENSIONS IN mm S P E C IF IC A T IO N , M A T E R IA L S : M O U LD IN G = H IG H T E M P E R A T U R E NYLO N U L 9 4 V -0

13005 s

Abstract: 1032G
Contextual Info: DRAWING N o .:-M 2 2 -6 0 13005 S H E E T 2 OF 2 DOUBT - ASK THIRD ANGLE PROJECTION NOT TO S C A L E A L L DIMENSIONS IN mm SP ECIFICATIO N . M A T E R IA L S : X MOULDING = HIGH T E M PERA T U RE NYLON U L 9 4 V -0 CO NTACTS = PHOSPHOR BRONZE FINISH: CO NTACTS = GOLD F L A S H OVER NICKEL

ENSP1F5

Abstract: ENSP1F5C305 RJ45 plug dimension drawing
Contextual Info: 12 13 ENGINEERING NO. E N 5P 1 F 5 C 3 0 5 E N 5P 1F 5M 0 06 EN SP1F5M 010 E N S P 1 F 5 C 3 0 5 -V E N S P 1F5 M 01 0-V M A T E R IA L NO 1300550004 1500550005 1300550003 1300550006 10 LEN G TH 30.5 CM 1.0 F T 0.6 M (1.97 F T ) 1.0 M (3.28 F T ) 30.5 CM (1.0 F T )

TH 2190

Abstract: T T 2190
Contextual Info: 10 12 13 EN G IN EER IN G NO. M A T E R IA L NO LE N G T H TO LE R A N C E EN5P1F5C305 30.5 CM 1.0 FT 1300550004 ENSP1F5M 006 0.6 1500550005 E N SP1F5M 010 1.0 1300550003 ENSP1F5C305-V 30.5 CM (1.0 FT) + 1.9 -0 CN( +.75"-0) 1300550006 E N 5P 1F 5M 010 -V

13005 2 transistor

Abstract: EB 13005 transistor 13005 E13005 EN 13005 transistor E 13005 13005 TRANSISTOR 13005 NPN Transistor PC 13005 TRANSISTOR EN 13005 2
Contextual Info: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B a s e V o lta g e : KSE13004 : K S E 13005

E13005D

Abstract: transistor 13005D transistor 3005D transistor I 3005D 13005d LO 13005D TRANSISTOR 13004D 13005D TRANSISTOR TR 13005D w 13005d
Contextual Info: TE13004D • TE13005D Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • M o n o lith ic in teg r a ted C - E -f r e e -w h e e l d io d e • H IG H S P E E D te c h n o lo g y • P la n a r p a ssiv a tio n •

VEB mikroelektronik

Abstract: Datenblattsammlung SY 625 V40511D mikroelektronik datenblattsammlung Diode KD 514 KD512A mikroelektronik Berlin "halbleiterwerk frankfurt" VEB Kombinat mikroelektronik Erfurt
Contextual Info: \ñ ñ lB rW *m X S á B Í4 ti& * 311' ill c e l e k t r o n i k - b a u e i e m e n t e ? 2/86 . Die vorliegenden Datenblätter beinhalten Listen i Infonmatic-aen ü b e r elektronischer Sie können abgeleitet beinhalten n ur z u r Information» Halbleiterbauelemente

2N5576

Abstract: MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LIN E No. T Y P E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12

Contextual Info: 10 130058 PART NUMBER OLD PART NUMBER 1 3 0 05 80 03 3 6 5-0300 n COMPONENT MATERIAL FINISH COUPLING NUT ABS BLACK CLOSURE CAP B P F 11/16 NYLON BLACK QUALITY SYMBOLS in % S <LU o . £ LU L j g d fb _ fra m e _ B _ P _ A M _ T R e v . E 2 0 0 6 /0 4 -/1 5

K155PE3

Abstract: K155TM2 k155py2 K155TM8 6e3p K155LI1 K155UE2 K155NA1 KM155TM2 K155TB1
Contextual Info: V/0 ELECTRONORGTECHNICA flflD D H ^366524 DD0DD3S 3 •USSR C E P M M M H T E rP A Jl b H b l X ' ^ M M K P O C X E M INTEGRATED M I C R O C I R C U IT S FAMILIES M H T e r p c p e A H a n b e r o H b i e m h K p o c x e r i b K155 KM155 i S b ic T p o A e iic T B iiJ i

S JE 13003

Abstract: 13003 h 6d SE 13003 13003 sd JE 13003
Contextual Info: NOT E S L MATERIALS: SHI ELD — D E E P DRAW S T E E L . HO U S I N G CONTACTS — COPPER ALLOY. M I C R O C R O S S GROU N D — C O P P E R 3 1.50 1.240 24 .1 3 R E F . DIM." B" E . C . ' .950 TAIL DIM ." A" P . C . TAIL LENGTH 2. R U A T I N G : SEE 3. P R O D U C T

transistor 13005D

Abstract: LO 13005D TRANSISTOR 13005D D13005d BR 13005d 13005D TRANSISTOR LO 13005D TR 13005D w 13005d 13004D
Contextual Info: Te m ic TD13004D • TD13005D TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • M o n o lith ic in te g ra te d C -E -fre e -w h e e l d io d e V ery low sw itch in g losses • H IG H S P E E D te c h n o lo g y V ery low d y n a m ic satu ratio n

SD-130055-016

Contextual Info: 12 13 10 DRAIN WIRE LOCATION KE T .00 14-UN-2A 1.96 .91 23.11 .208 ±.005 REF - REF A 1.020 ±.005 P A N E L CUT OUT 1.29 P A N E L THK: .125 MAX. W /G A S K E T HEX 3 Z 7 7 REF .187 MAX. W /O UT G A S K E T .33 8.3' ;REF .062 MIN. NOTES: 1 N A T E R IA L: SEE T A B L E

062 6089B

Abstract: 6089B 5733D N6089C
Contextual Info: Zener Regulator Diodes ZEN M ic r o s e m i I P a c k a g e ! O u tlin e D iv is io n Type M il D a ta Spec S h e e t ID Pow er Vz Zzk V Iz t (m A ) Zzt (W) , (n ) (n ) - I P a rt N u m b e r Microsemi VR T o i. (V ) (+/-% ) 1N 5733B S c o tts d a le D O -3 5

163n

Contextual Info: DRAWING No.: Customer Information Sheet I I SHEET 2 OF ? I M22-6013005 IF IN DOUBT - ASK | C | NOT TO SCALE THIRD ANGLE PROJECTION ALL DIMENSIONS IN mm I. ALL T O L E R A N C E S ARE ±0.20 UN LE SS O T H E R W I S E STATED. •60. 20±0. 30■58.00- - fija-

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. W V COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 6 4 3 2 - LOC DIST R E V IS IO N S DE EO ALL RIGHTS RESERVED. P LTR F MILITARY PART N U M B E R , 0 0 7 7 9 , M A R K E D ON O P P O S I T E SIDE.

Transistors 13005 D

Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K
Contextual Info: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 E 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use

2SC102 transistor

Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C

13005

Abstract: E 13009 L 13001 dip40 package 13001 datasheet 13005 2 SSO24 transistor 13009 D-16 D-20
Contextual Info: IC Packaging Information Package Information Ceramic DIP, 8-16 Leads E 1 E1 2 D S A1 A L L2 b e L1 C b1 Q e1 Dim Millimeters Min Max Inches Min Max A A1 b b1 C D-8 D-14 D-16 E E1 e e1 L L1 L2 S-8 S-14 S-16 4.06 5.08 1.27 2.16 1.14 1.65 0.38 0.51 0.20 0.30

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

ICL7661

Abstract: JCL7660 MAXI044 L7660d tcl7660 equivalent tcl7660 ICL 7660 equivalent icl 7660 ICL7660-1
Contextual Info: 79 -4 66 7: R ev 7; 7/94 > k l> J X I> k l Switched-Capacitor Voltage Converters The MAX1044/ICL7660 com bine low quiescent current and high efficiency. Oscillator control circuitry and four p o w e r M O SFET s w itc h e s are in c lu d e d o n -c h ip .

Contextual Info: Catalog 1307612 A I V I P AMPMODU .100 [2.54] Centerline Revised 7-01 Application Tooling for Wire Crimp Contacts T ooling show n on this p a g e is d e s ig n e d to te rm inate w ire c rim p co n ta c ts used in va rio u s A M P M O D U w ire -to -b o a rd

13005 2 transistor

Abstract: transistor 13005 13005 TRANSISTOR EB 13005 transistor E 13005 13005 NPN Transistor PC 13005 TRANSISTOR E13005 13005 power transistor EN 13005 2
Contextual Info: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol VcBO : K S E 13004 : KSE13005 Collector Emitter Voltage