E 1024 Search Results

NEC 28PIN DIP

Abstract: nec A2C JJPB100476LL PPB100476LL 100476LL
Contextual Info: N E C ELECTRONICS INC SEC blE » NEC Electronics Inc. b427525 0035302 377 « N E C E ÍJPB100476LL 1024 X 4-Bit 100K ECL Synchronous RAM T - H Prelim inary Information Description Pin Configurations T h e juPB 100476LL is a v e ry -h ig h -sp e e d 100K inte rface

mm5013

Abstract: MM5013N ST 1042 drum ic
Contextual Info: Sem iconductor MOS - Dynamic Shift C O N N E C T IO N D I A G R A M MM5013 1024 Bit Dynam ic Shift Register/Accumulator Write Control R E FE R E N C E T A B L E r — Read Control Data In Code S tock No. MM5013N 34521X G E N E R A L D E S C R IP T IO N T h e MM5013 1024-blt dynam ic shift register/

1024x1 static ram

Abstract: L15A L25A MCM2125A mcm2115a-45 2115A 530ns
Contextual Info: MCM2115A MCM21L15A MCM2125A MCM21L25A MOTOROLA 1024x1 STATIC RAM M O S T h e M C M 2 1 1 5 A a n d M C M 2 1 2 5 A f a m ili e s a r e h i g h - s p e e d , 1 0 2 4 w o r d s b y o n e - b it , ra n d o m -a c c e s s m e m o r ie s fa b r ic a te d p e r f o r m a n c e N - c h a n n e l s i li c o n - g a t e t e c h n o lo g y .

Contextual Info: DS1 745Y /Y LPM DALLAS SEMICONDUCTOR DS1745Y/YLPM 3 Volt e 1024K NV SRAM FEA TU R E S PIN A S S IG N M E N T • D a t a r e t e n t i o n in t h e a b s e n c e o f V c c NC • D a t a is a u t o m a t i c a l l y p r o t e c t e d d u r i n g p o w e r l os s

Fairchild 93415

Abstract: 93415DC 1024-words 93415-DC
Contextual Info: Fairchild Semiconductors Semiconductors Integrated Circuits - Bipolar Memories 934151024-Bit Full D e c o d e d R a n d o m A c c e s s M em ory c o n n e c t io n d ia g r a m G E N E R A L D E S C R IP T IO N The 93415 is a 1024-Bit Read/Write Random A c c e s s

d5101l

Abstract: PD5101L upd5101 5101L-4 mpD5101 5101L
Contextual Info: MPD5101L SEC N E C E le c tr o n ic s U S A In c . m PD51o i h Microcomputer Division 1024 BIT 256x4 STATIC CMOS RAM DESCR I P T I O N T h e /UPD5101L and p P D 5 1 0 1 L -1 are v e ry lo w p o w e r 1024 b it (2 56 w o rd s b y 4 bits) sta tic C M OS R an d o m Access M e m ories. T h e y m e et th e lo w p o w e r re q u ire m e n ts o f

ls 2533

Abstract: H 3355 fairchild mos "voltage controlled resistor" 3355
Contextual Info: 3 3 5 5 /2 5 3 3 1024-BIT STATIC SHIFT REGISTER G E N E R A L D E S C R IP T I O N — T h e 3 3 5 5 / 2 5 3 3 is a s-nyle p h a s e 1 0 2 4 - B it S ta tic S h ift R e y ib tu r w . iii a n o n c h ip c lo c k g e n e r a to r th a t is d r iv e n b y a s in g le p h a s e TTL c lo c k A m u ltip le x e r is p ro v id e d tu

ITT 2115

Abstract: "Pin compatible" Signetics c00t 93425
Contextual Info: S ig n e tic s Memories - M O S R A M S 2115-1024 Bit Static MOS RAM 1024 x 1 C O N N E C " "IO N D IA G R A M G E N E R A L D E S C R IP T IO N T h e 2 1 1 5 a n d 2 1 2 5 f a m ily are r e a d /w rite R A M s w h ic h are d esig n ed f o r b u f f e r c o n t r o l storag e a nd h ig h p e rfo rm a n c e

UPD5101L

Abstract: 5101L 5101L-1 mpD5101
Contextual Info: SEC MPD5101L N E C E le c tr o n ic s U S A In c . m PD51o i h Microcomputer Division 1024 BIT 256x4 ST A T IC C M O S RAM DESCR I P T I O N T h e /UPD5101L and p P D 5 1 0 1 L -1 are v e ry lo w p o w e r 1024 b it (2 56 w o rd s b y 4 bits) sta tic C M OS R an d o m Access M e m ories. T h e y m e et th e lo w p o w e r re q u ire m e n ts o f

fairchild 2102

Abstract: 2102DC a1024 Static Random Access Memory 32X32
Contextual Info: Sem iconductors Fairchild Sem iconductors 21021024 x 1 Static Random A cc e ss Memory G E N E R A L D E S C R IP T IO N T h e 2102 Is a 1024 w o rd by a bit static rand o m a c c e s s m em ory m anu factu re d with F a irc h ild 's N -ch a n n e l io n-im p lan ted is o p la n a r p ro c e ss . T h e

Contextual Info: WPF1024K32-XPBX I/VHITE /M IC R O E L E C T R O N IC S m 1024Kx32 FLASH BALL GRID ARRAY P R E L IM IN A R Y ' FEATURES • ■ A ccess T im e s of 90, 150ns ■ O rg an ize d as 10 2 4 K x3 2 P e rim e te r B a ll G rid Packaging ■ C o m m e rc ia l and In d u s tria l T e m p e ra tu re R anges

UPD5101L

Abstract: 5101L PD5101L PD5101 d5101l 5101L-1
Contextual Info: MPD5101L SEC N E C E le c tr o n ic s U S A In c . m P D 51 o i h Microcomputer Division 1024 BIT 256x4 ST A T IC C M O S RAM DESCR I P T I O N T h e /UPD5101L and p P D 5 1 0 1 L -1 are v e ry lo w p o w e r 1024 b it (2 56 w o rd s b y 4 bits) sta tic C M OS R an d o m Access M e m ories. T h e y m e et th e lo w p o w e r re q u ire m e n ts o f

ram 2111 signetics

Abstract: 2111 ram 2111N Signetics SE 540
Contextual Info: S ig n e tic s M le m o r ie s -M O S -R A M S 2111-1024 Bit Static MOS RAM 256 x 4 C O N N E C T IO N D IA G R A M a 3U G E N E R A L D E S C R IP T IO N T h e 2 1 1 1 se rie s is a h ig h -p e rfo rm a n c e , lo w -p o w e r sta tic read /w rite R A M .

Contextual Info: 2111 *2111-1 *2 1 1 1 -2 ‘ 2611-XA, IK DESCRIPTION PIN CONFIGURATION The 2111 series e 1024-bit high performance, low power static read/write RAMS organized as 256 words by 4 bits. XA.IK PACKAGE E 3 VCC A2 E 3 A4 ai E 3 R/W ao E 3 CEl a5 E 3 a6 E 3 l/0 3

DS1245

Abstract: "lithium battery pack" pinout
Contextual Info: D S 1 2 4 S Y /A B DALLAS SEMICONDUCTOR F E AT URE S DS1 245Y/ AB 1024K N onvolatile SRAM PIN A S S I G N M E N T NC I 1 1 32 1 I1 2 A 14 I 1 3 A12 I 1 4 A7 I 1 5 A” E 1 5 AE E 1 7 A4 E 18 A3 1 19 A2 E 1 10 A1 1 1 11 A0 E I 12 DQ0 E 1 13 DQ1 II 14 DQ2 I

eprom 2508

Abstract: ansi y32
Contextual Info: MOS LSI TMS 2508 JL FAST 1024-WORD BY 8-BIT ERASABLE P R O G R A M M A B L E R EAD-O NLY M E M O R Y D E C E M B E R 1979 • Organization. 1K x 8 TM S 2508 2 4 -P IN C E R P A K • S in g le + 5 V Power Supply D U A L - IN L IN E P A C K A G E • Pin Compatible with Existing ROM s and

ZLD0

Abstract: MB7072 MB7072E A2C5 TX3C 0C25
Contextual Info: MB7072E FUJITSU M IC R O ELEC TR O N IC S. INC. ECL 256 X 4-BIT BIPOLAR RANDOM ACCESS MEMORY DESCRIPTION The F u jits u M B7072 is a fu lly d e c o d e d 1024-bit EC L re a d /w rite ra n d o m a c c e s s m e m o ry d e sig n e d fo r h ig h -sp e e d s c ra tc h pad, c o n ­

HC 1024 NA

Abstract: 2504v signetics 2504V 2504TA 10NEC 2502B signetics 2503V signetics 2502 26 SIGNETICS signetics memories bipolar
Contextual Info: 1024-BIT CAPACITY MULTIPLEXED DYNAMIC SHIFT REGISTERS s ig n o tiC B SILICON GATE MOS 2500 SERIES 250: 250: 250 B IP O L A R C O M P A T IB IL IT Y d e s c r ip t io n T h e d a ta in p u ts o f th e se re g iste rs c a n b e d riv e n directly T h e s e S ig n e tic s 2 5 0 0 S e rie s 1 0 2 4 - b it m u lt ip le x e d d y n a m ic

27L08-45

Abstract: 2708 eprom 27L08 2708-45 74LS TTL 245 TMS 2708 JL a1023 ansi y32.14 diagram 2708 memory TMS2708
Contextual Info: TMS 2708-35 JL. TMS 2708-45 JL, TMS 27L08-45 JL 1024-WORD BY 8-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES MOS LSI D E C E M B E R 1 9 7 9 - R E V I S E D M A Y 1982 1024 X 8 Organization A ll Inputs and O utputs F ully T T L Compatible 24-PIN CER P AK D U A L -IN -L IN E PACKAG E

"Pin compatible" Signetics

Abstract: MOS-RAM
Contextual Info: S ig n e tic s Memories—MOS-RAMS 2101-1024 Bit Static MOS—RAM 256 x 4 C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T h e 2101 series is high performance, low pow er static read/write R A M 's . T h e 2101 series is fabricated with n-channel silicon gate

Contextual Info: C L O C K E D FIRST-1 SN74ACT781 1 1024 x 18 FI RS T - OUT M E M O R Y SCAS151C-JANUARY 1991 - REVISED FEBRUARY 1996 M e m b e r o f the Texas I n s t r u m e n t s W i d e b u s F ami ly Input - Ready, O u tp ut - Re a dy , and Half-Full Fl ags I n d e p e n d e n t A s y n c h r o n o u s I n p u t s and

1645Y

Contextual Info: DS1645Y/AB DALLAS SEMICONDUCTOR e 1024K NV SRAM FEATURES PIN ASSIGNMENT DS1645Y/AB • 10 y e a rs m in im u m d a ta re te n tio n in th e a b s e n c e of e x te rn a l p o w e r • D a ta is a u to m a tic a lly p ro te c te d d u rin g p o w e r loss

93425

Abstract: CERPAK 93L425 93L425-35 93L425-40 93L425-45 93L425-50 93L425-60 93L425-70 93L425DC
Contextual Info: 93425/93L425 1024 x 1-Bit Static Random Access Memory FA IR C H ILD A S chlum berger C om pany M e m o ry a n d H ig h S p e e d L o g ic Description T h e 93425 is a 10 2 4 -b it re a d /w rite R a n d o m A c c e s s M e m o ry R A M , o rg a n iz e d 1024 w o rd s b y o n e bit. It is

Contextual Info: SN74ACT2236 1024 x 9 x 2 ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY SCAS149A- APRIL 1990 - REVISED SEPTEMBER 1995 I n d e p e n d e n t A s y n c h r o n o u s I nput s and Outputs A c c e s s T i m e s o f 2 5 ns With a 5 0 -pF Load L o w - P o w e r A d v a n c e d C M O S T e c hn o l o g y