DUROID 5880 Search Results

AD8313-EVAL

Abstract: AD8313 EVAL-AD8313EB sma 906 SMA pcb footprint Connector
Contextual Info: AD8313 Evaluation Board EVAL-AD8313EB BOARD DESCRIPTION Schematic and Layout Figure 5 shows the schematic of the evaluation board that was used to characterize the AD8313. Note that uninstalled components are drawn in as dashed. This is a 3-layer board signal, ground, and power , with a Duroid

RO4403

Abstract: Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 RO4350B rogers laminate materials RO4450B RO3210
Contextual Info: Ordering Information: Standard Thickness, Tolerance and Panel Size Rogers’ high frequency laminates can be purchased by contacting a Rogers Customer Service Representative at 480 961-1382 or one of our international offices listed below. To ensure that you receive the material for your application, please include order information for each of the

SMTO-8

Abstract: WATKINS-JOHNSON CO WATKINS-JOHNSON CO SMTO-8 IN5880
Contextual Info: A Revolutionary RF/Microwave "Surface-Mount" Product Line by: Louis M. Seieroe, Kenneth S. Ledford, Timothy J. Bianey and Louis Hsiao Watkins-Johnson Company Palo Alto, CA The emphasis on improving system per­ formance by adding new features, while at the same time reducing overall system

RF331

Abstract: RT DUROID 5880 RF3311
Contextual Info: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 RF331 RELAY TYPE RF311 SPDT RF TO-5 relay RF331 Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION UNI-FRAME SERIES PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT

RF311

Contextual Info: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 SPDT RF TO-5 relay Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT ARMATURE LOWER STATIONARY CONTACT ENVIRONMENTAL AND

rogers 5880

Abstract: RT DUROID 5880 rt/duroid 5880
Contextual Info: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 RF331 RELAY TYPE RF311 SPDT RF TO-5 relay RF331 Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION UNI-FRAME SERIES PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT

AN-A002

Abstract: AN-G002 testing amplifier circuit ATF-10136 TF-10136 low noise design ATF 10136 stub tuner matching 10136 stub tuner waveguide AM Noise Reduction System
Contextual Info: W hpfiM %PH AE CWKLAERT DT mL' AN-G 002 A TF-10136 Dem onstration Am plifier Novem ber, 1990 Introduction This Applications Bulletin describes a one stage low noise am plifier designed using the HP ATF-10136 G aAs FET transistor. This amplifier demonstrates the capabilities of this

ATF13136

Abstract: AN-A002 transistor atf TVRO stub tuner matching 5091-9055E ATF-13136
Contextual Info: ATF-13X36 Demonstration Amplifier Application Note G001 Although the following information covers the ATF-13136, the ATF-13336 and the ATF-13736 could be substituted, with some degradation in noise performance. Introduction This Application Note describes a one stage low noise amplifier

rf311

Abstract: RF311RF331 J412 to-5 RELAY-SPDT RF300 motor RT DUROID 5880 er116c
Contextual Info: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 RF331 RELAY TYPE RF311 SPDT RF TO-5 relay RF331 Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION UNI-FRAME SERIES PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT

J329 transistor

Abstract: 20AWG TPR400A j302
Contextual Info: TPR400A 400 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz GENERAL DESCRIPTION The 60198 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. Low thermal

j329

Abstract: J3-29 duroid 5880 20AWG TPR400A J251
Contextual Info: TPR400A 400 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz GENERAL DESCRIPTION The TPR400A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. Low

vogt transformer

Abstract: toko balun TOKO 10.7 transformer RT5880 VOGT pd Transformer tee transformer vogt Vogt Siemens Halbleiter
Contextual Info: ICs for Communications LNA/MIXER PMB 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 GLWLRQ  3XEOLVKHG E\ 6LHPHQV $* %HUHLFK +DOEOHLWHU 0DUNHWLQJ .RPPXQLNDWLRQ %DODQVWUD‰H   0QFKHQ Siemens AG 1995. All Rights Reserved.

gold detector circuit free

Abstract: coil gold detector microstrip directional coupler yig oscillator rt/duroid 5880 hfss directional coupler sampling gate stripline directional couplers 20ghz vco ghz coupler
Contextual Info: Novel Design for Microwave Source Author: Saddique Mohammed Published in: Microwave Engineering Europe Date: October 1998 BACKGROUND As in all other fields of electronics, the microwave subsystem is undergoing a period of miniaturisation. The drive from microwave component purchasers who want to pack as much

T2333

Abstract: K 2333 RT5880 GPS05864 teflon s-parameter gilbert cell mixer
Contextual Info: ICs for Communications Mixer/Amplifier PMB 2333 Version 1.2 Preliminary Data Sheet 02.96 T2333-XV12-P1-7600 PMB 2333 Revision History: Previous Version: Page in Version Page (in new Version) Current Version: 02.96 none Subjects (major changes since last revision)

MADL-0110

Abstract: ODS-30 MADL01 MADL-011009-01340W
Contextual Info: MADL-0110 Series Silicon PIN Limiter Diodes V1 Chip Outline Features • • • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation

Contextual Info: SIEMENS ICs for Communications LNA/MIXER P M B 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 053SbO S 0 C H flb 4 3 7bfc> E d itio n 06 .96 A u s g a b e 06 .9 6 P u b lis h e d b y S ie m e n s A G , B e re ic h H a lb le ite r, M a rk e tin g K o m m u n ik a tio n , B ala n s tra B e 73,

"if amplifier" siemens

Contextual Info: PMB 2333 SIEMENS Table of Contents Page 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w . 2 F e a tu re s .2

RT5880

Abstract: teflon s-parameter amplifier mixer circuit diagram smd 2a y 3c TOKO 10.7 transformer vogt transformer LO dc to 3 ghz lna amplifier application circuits vogt s2 t 2333 vogt l4
Contextual Info: S IE M E N S PMB 2333 Table of Contents Page 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w . 2 F e a tu re s. 2

NE3517S03

Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS

NE3514S02

Abstract: NE3514 NE3514S02-A transistor "micro-x" "marking" 3 RT DUROID 5880 NE3514S02-T1D NE3514S02-T1C-A ir260 N-CHANNEL HJ-FET NE3514S02-T1D-A
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS

tip 134

Contextual Info: MA4L Series Silicon PIN Limiter Chips RoHS Compliant M/A-COM Products Rev. V9 Features • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven and Reliable Silicon Nitride Passivation

MA4L401-30

Abstract: MA4L011-186 ma4l011 MA4L401-132 rogers 5880 MA4L062-134 1056 coil gold detector MA4L011-30 SMD MARKING CODE HF
Contextual Info: MA4L Series Silicon PIN Limiter Diodes V13 Features • • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation RoHS Compliant

NE3517S03-A

Abstract: NE3517S03-T1C NE3517S03 HS350
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS

rogers 5880

Contextual Info: MA4L Series Silicon PIN Limiter Diodes V14 Features • • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation RoHS Compliant