DUAL N-CHANNEL SOT-6 MOSFET Search Results

Contextual Info: APM2700AC Dual Enhancement Mode MOSFET N- and P-Channel Features • Pin Description N-Channel 20V/2A, RDS(ON)= 125mΩ(typ.) @ VGS= 4.5V RDS(ON)= 175mΩ(typ.) @ VGS= 2.5V RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V • P-Channel Top View of SOT-23-6 -20V/-1.4A,

APM2700A

Abstract: APM2700AC STD-020C
Contextual Info: APM2700AC Dual Enhancement Mode MOSFET N- and P-Channel Features • Pin Description N-Channel 20V/2A, RDS(ON)= 125mΩ(typ.) @ VGS= 4.5V RDS(ON)= 175mΩ(typ.) @ VGS= 2.5V RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V • P-Channel Top View of SOT-23-6 -20V/-1.4A,

MARKING GA SOT-363

Abstract: 22PF 2N7002DW
Contextual Info: 2N7002DW Dual N-Channel MOSFET 3 2 6 5 1 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V TYE *Fast Switching Speed : 11ns 1 4 5 2 4 3 SOT-363(SC-88) 6 Mechanical Data: *Case: SOT-363, Molded Plastic

MARKING GA SOT-363

Abstract: 22PF 2N7002DW
Contextual Info: 2N7002DW Dual N-Channel MOSFET 3 2 6 5 1 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V TYE *Fast Switching Speed : 11ns 1 4 5 2 4 3 SOT-363(SC-88) 6 Mechanical Data: *Case: SOT-363, Molded Plastic

APM2700AC

Abstract: APM2700A MOSFET P SOT-23 S1 SOT-23-6 SOT-23 marking 2f p-Channel ISD05 sot-23-6 n-channel mosfet
Contextual Info: APM2700AC Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 20V/2A, D1 RDS(ON)= 125mΩ(typ.) @ VGS= 4.5V S1 D2 RDS(ON)= 175mΩ(typ.) @ VGS= 2.5V RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V • G1 S2 G2 P-Channel Top View of SOT-23-6

Contextual Info: 2N7002KDW Dual N-Channel MOSFET 6 5 P b Lead Pb -Free 1 Features: 2 4 3 SOT-363(SC-88) * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ESD Protected:2000V 6 5 4 D2 G1 S1 S2 G2 D1 1 2 3 Mechanical Data: *Case: SOT-363, Molded Plastic

Dual N-Channel mosfet sot-363

Abstract: sot-363 n-channel mosfet sot-363 Marking G1 marking s1 sot363 2N7002KDW 2N7002DKW SOT363-6 sot-363 marking 20 SOT363 6 SOT-363 mosfet
Contextual Info: 2N7002KDW Dual N-Channel MOSFET 6 5 P b Lead Pb -Free 1 Features: 2 4 3 SOT-363(SC-88) * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ESD Protected:2000V 6 5 4 D2 G1 S1 S2 G2 D1 1 2 3 Mechanical Data: *Case: SOT-363, Molded Plastic

APM2701AC

Abstract: APM2701A apm2701 A104 diode MOSFET P-channel SOT-23-6 AAAX sot 26 Dual N-Channel MOSFET
Contextual Info: APM2701AC Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel D1 20V/3A, S1 D2 RDS(ON)=50mΩ(typ.) @ VGS=4.5V RDS(ON)=65mΩ(typ.) @ VGS=2.5V • G1 P-Channel S2 G2 Top View of SOT-23-6 -20V/-2A, RDS(ON)=90mΩ(typ.) @ VGS=-4.5V

mosfet "marking code 44" sot-23-6

Abstract: APM2706C MOSFET N SOT-23 STD-020C apm27 AB SOT-23-6
Contextual Info: APM2706C Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel D1 S1 30V/3A, D2 RDS(ON)= 55mΩ(typ.) @ VGS= 10V RDS(ON)= 80mΩ(typ.) @ VGS= 4.5V • G1 P-Channel S2 G2 -30V/-2.2A, Top View of SOT-23-6 RDS(ON)= 100mΩ(typ.) @ VGS= -10V

mosfet vth 5v

Abstract: Dual N-Channel MOSFET sot-363 n-channel mosfet SSN2N7002C Dual Enhancement Mode MOSFET
Contextual Info: SSN2N7002C Dual Enhancement Mode MOSFET Product Summary N-Channel VDS (V) SOT-363 RDS(ON) (Ω) Max 6 3.0 @VGS = 10V 0.120A 1 Product Summary (P-Channel) ID (A) -60V -0.130A 4 YW 4.0 @VGS = 4.5V VDS (V) 5 2C 60V ID (A) 2 3 RDS(ON) (Ω) Max D1 (6) 7.5 @VGS = 10V

MOSFET "MARKING CODE 7V"

Abstract: SOT-363 mosfet A495 5G12
Contextual Info: SSN2N7002B Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-363 RDS(ON) ( ) Max 3 @VGS = 10V 1 4 @V GS = 5V D1 (6) D2 (3) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. G2(5) G1(2) SOT-363 package.

SI1902DL-T1

Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 D TrenchFETr Power MOSFET: 2.5-V Rated Available COMPLIANT SOT-363 SC-70 (6-LEADS) 1 6 D1 G1

WTL2622

Contextual Info: WTL2622 Dual N-Channel Enhancement Mode MOSFET 6 DRAIN P b Lead Pb -Free DRAIN CURRENT 520mAMPERES DRAIN SOURCE VOLTAGE 50 VOLTAGE 1 GATE 5 SOURCE Features: 6 4 DRAIN * Low Gate charge * Surface Mount Package 1 2 5 4 3 SOT-26 3 GATE 2 SOURCE Maximum Ratings (TA

8205 sot-23-6

Abstract: Dual N-Channel MOSFET 8205 8205 A mosfet SSS8205 8205 dual mosfet 8205 mosfet 8205 sot 23-6 8205 A 8205 datasheet 8205
Contextual Info: SSS8205 Dual N-Channel Enhancement Mode MOSFET Product Summary ID A RDS(ON) (m ) Max 05 YW 25 @VGS = 4.5V 5A 18V 82 VDS (V) TSOP-6 (SOT-23-6) 1 45 @VGS = 2.5V D1 (2, 5) D2 (2, 5) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable.

marking 8206

Abstract: RT 8206 sot-23-6 marking code "MARKING CODE G2" MARKING CODE G2
Contextual Info: SSS8206 Dual N-Channel Enhancement Mode MOSFET Product Summary ID A RDS(ON) (m ) Max 06 YW 20 @VGS = 4.5V 5.5A 16V 82 VDS (V) TSOP-6 (SOT-23-6) 1 35 @VGS = 2.5V D1 (2, 5) D2 (2, 5) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable.

Dual N-Channel mosfet sot-363

Abstract: diode 66a SSN1902 sot-363 n-channel mosfet 66a Diodes Dual N-Channel MOSFET
Contextual Info: SSN1902 Dual N-Channel Enhancement Mode MOSFET Product Summary SOT-363 6 RDS ON (mΩ) Max ID (A) 4 YW 385 @VGS = 4.5V 1 0.7A 20V 5 19 VDS (V) 2 630 @VGS = 2.5V 3 D1 (6) D2 (3) FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable.

Contextual Info: 2N7002DW Dual N-Channel MOSFET 6 5 1 Features: * We declare that the material of product are Halogen Free and compliance with RoHS requirements. * ESD Protected:1000V 2 4 3 SOT-363 SC-88 3 2 1 D2 G1 S1 S2 G2 D1 4 5 6 Maximum Ratings (TA=25 C Unless Otherwise Specified)

Contextual Info: SMD Type MOSFET Dual Enhancement Mode MOSFET APM2701CG • Features SOT-23-6 Unit: mm ● RDS(ON) ＜ 70mΩ (V GS = 4.5V) ● RDS(ON) ＜ 110mΩ (VGS = 2.5V) S1 D1 ０．３ｍｉｎ ● N-Channel ：V DS=20V I D=3A D2 ● P-Channel： VDS =-20V ID=-1.5A

71080

Abstract: Si1902DL
Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code

marking code PB

Abstract: SI1900DL-T1-E3 Si1900DL Si1900DL-T1
Contextual Info: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB

Contextual Info: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability

Si1900DL

Contextual Info: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability and Date Code

UM6K1N

Contextual Info: UM6K1N Dual N-Channel MOSFET 6 5 P b Lead Pb -Free 1 Features: 2 4 3 SOT-363(SC-88) * The MOS FET elements are independent, eliminating mutual interference * Mounting cost and area can be cut in half * Low On-resistance * Low voltage drive (2.5V drive) makes this

Si1900DL

Contextual Info: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability