DSS SOT23 Search Results

IRLML2402

Abstract: IRLML2803 IRLML5103 IRLML6302 IRLML6402 43A MARKING CODE marking 43A sot23 MARKING BS SOT-23 IRLML6401PBF
Contextual Info: IRLML6401PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

ZXM61P02F

Abstract: ZXM61P02FTA ZXM61P02FTC D061A DSA003663 MARKING P02
Contextual Info: ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=-20V; RDS(ON)=0.60⍀
ID=-0.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

marking N03

Abstract: 91A 10 91A SOT23 ZXM61N03F ZXM61N03FTA ZXM61N03FTC DSA003663
Contextual Info: ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=30V; RDS(ON)=0.22⍀
ID=1.4A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

2P02

Abstract: ZXM62P02E6 ZXM62P02E6TA ZXM62P02E6TC marking QG SOT23-6 marking 2P02 S16A DSA003664 D08A
Contextual Info: ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=-20V; RDS(ON)=0.20⍀
ID=-2.3A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

2N02

Abstract: ZXM62N02E6TC ZXM62N02E6 ZXM62N02E6TA TF 2N02 DSA003663
Contextual Info: ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=20V; RDS(ON)= 0.1⍀
ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching

ZXM61N02F

Abstract: ZXM61N02FTA ZXM61N02FTC top marking G62 DSA003663 n02 mosfet
Contextual Info: ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=20V; RDS(ON)=0.18⍀
ID=1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

ZXM61P03F

Abstract: ZXM61P03FTA ZXM61P03FTC S06A F06A diode DSA003663
Contextual Info: ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=-30V; RDS(ON)=0.35⍀; ID=-1.1A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

MOSFET 2n03

Abstract: 2N03 ZXM62N03E6 ZXM62N03E6TA ZXM62N03E6TC DSA003664 2N03 08
Contextual Info: ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=30V; RDS(ON)=0.11⍀; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching

2P03

Abstract: MARKING 2p03 SOT23-6 ZXM62P03E6 ZXM62P03E6TA ZXM62P03E6TC zxm6* sot23-6 DSA003664
Contextual Info: ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=-30V; RDS(ON)=0.15⍀
ID=-2.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

ZXM63N02

Abstract: MO-187 ZXMD63N02X ZXMD63N02XTA ZXMD63N02XTC DSA003665
Contextual Info: ZXMD63N02X DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=20V; RDS(ON)=0.13
 ID=2.4A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

ZXMP2120FFTA

Contextual Info: ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (⍀) ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability,

D8154

Abstract: ZXMN2F30FH
Contextual Info: ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.

design ideas

Abstract: TS16949 ZXMN2F34FH ZXMN2F34FHTA
Contextual Info: ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.

TS16949

Abstract: ZXMN3F30FH ZXMN3F30FHTA
Contextual Info: ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with 4.5V gate drive. Features

Contextual Info: Product specification ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from TY features low onresistance achievable with low (2.5V) gate drive.

Contextual Info: Product specification ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from TY features low onresistance achievable with 4.5V gate drive.

2N7002 SOT23

Abstract: marking 702 sot23 2N7002 MARKING design ideas 2N7002 TS16949 MARKING 702
Contextual Info: 2N7002 60V SOT23 N-channel enhancement mode MOSFET Summary RDS on (⍀) ID (A) 7.5 @ VGS= 10V 0.5 7.5 @ VGS= 5V 0.05 V(BR)DSS 60 Description A small signal MOSFET for general purpose switching applications. Features D • Fast switching speed • Low gate drive capability

BSS127S

Abstract: K29 mosfet BSS127 K28 SOT23
Contextual Info: BSS127 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C 600V 160Ω @ VGS = 10V SC59 SOT23 70mA • • • • • Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage

ZXMP2120G4TA

Abstract: ZXMP2120G4TC ZXMP2120E5 ZXMP2120G4
Contextual Info: ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high

P120

Abstract: ZXMP2120E5 ZXMP2120E5TA ZXMP2120G4 FS50D
Contextual Info: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high

ZXMP2120E5

Abstract: ZXMP2120G4 ZXMP2120G4TA ZXMP2120G4TC
Contextual Info: ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high

Contextual Info: Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V 1.0A @ TA = 25°C

Contextual Info: Product specification ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 0.200 @ VGS= 1.8V 1.7 V(BR)DSS 20 Description This new generation trench MOSFET from TY features low onresistance achievable with low gate drive.

Contextual Info: Product specification ZXMP3F30FH 30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 0.080 @ VGS= -10V -4.0 (V) -30 0.140 @ VGS= -4.5V Description This new generation Trench MOSFET from TY has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance.