DO-151
Abstract: DFA12E DSA26C DSK10L DSK10 lfb01l SVC251Y GMA01 DSB015 ds442x
Contextual Info: DIODES, THYRISTORS, SENSO High-speed Switching Diodes Plastic-package Diodes Device l0 A Vr <V) Package type 0.10 80 MCP2 DCF010 0,10 so DCG010 0.10 80 D S E 01 0* Features Device Single DCA015 MCP Com m on anode DCB015 MCP Com m on cathode DSA015 10 (A)
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PD70F35
Abstract: R01US0001EJ v850E2M architecture Users Manual SUS 303 EZ CG 555 timer guard ring TT 2188 v850e2m NAS11 TAPA2 B32R
Contextual Info: User Manual V850E2/MN4 32 RENESAS MCU V850E2/Mx4 microcontrollers PD70F3510 μPD70F3512 μPD70F3514 μPD70F3515 All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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v850e2/mn4v850e2/mx4pd70f3510pd70f3512+13pd70f3514pd70f3515r01uh0011ej0100pd70f35r01us0001ejv850e2m architecture users manualsus 303 ez cg555 timer guard ringtt 2188v850e2mnas11tapa2b32r
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DSA10
Abstract: DSA10G DSA10J DSA10L
Contextual Info: Ordering number :EN711D N 0 .7 I ID DSA10 / Diffused Junction Type Silicon Diode 1.0A Power Rectifier F e a tu re s • P lastic molded type •P eak reverse voltage V r m —“ 600 to —1000V • Average rectified cu rren t Iq = 1A A b so lu te M ax im u m R a tin g s
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DSA10
Abstract: DSA10G DSA10J DSA10L DIODE 1.0A 1000V
Contextual Info: Ordering number:EN711D DSA10 Diffused Junction Type Silicon Diode 1.0A Power Rectifier Features Package Dimensions • Plastic molded type. · Peak Reverse Voltage : VRM=600 to 1000V · Average Rectified Current : IO=1A. unit:mm 1005 [DSA10] C:Cathode A:Anode
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en711ddsa10dsa10gdsa10j+2dsa10ldiode 1.0a 1000v
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1S553T-HP
Abstract: 1s553 1S553T GSA30B SVC321 GSA30E svc203cp DSK10L SVC203 DS135E
Contextual Info: SANYO SEMICOND UCT OR CORP DTE D | T -0*1-01 DnDSSin 3 | T-Ol-Oi VARACTO R DIODES *; Dual type It v Rm Package ' ' 32 20 16 Plastic Coaxial 1S553T-HP FM AM SVC321 Plastic SVC321SP Plastic (SP) Electronic SVC333 Tuning FM Electronic Plastic SVC201SP Plastic(PCP)
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DSK10L
Abstract: DFC15TR SVC201SPA SVC201Y SVC202 SVC202SPA SVC203CP SVC203SPA SVC363 SVC212
Contextual Info: Continued from previous page V r V t 12 i f l H - C1 (pF)t C20 (p F )i Package type Applications - 460.0 to 540.0 (1 V) 21.0 to 27.0 (8 V) MFP6 AM electronic tuning - - 428.0 to 500.0 (1 V) 20.5 to 27.0 (8 V) MFP6 AM electronic tuning - - 39 (1 V) 8.4 to 12.6 (9 V)
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V850E2M 32-bit Microcontroller Core Architecture
Abstract: v850E2M architecture Users Manual uPD70F35
Contextual Info: User Manual V850E2/MN4 User’s Manual: Hardware 32 RENESAS MCU V850E2/Mx4 microcontrollers PD70F3510 μPD70F3512 μPD70F3514 μPD70F3515 All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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EQUIVALENT BYD33D
Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and
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Pressure Sensor Spx 3058
Abstract: V850E2M 32-bit Microcontroller Core Architecture
Contextual Info: User’s Manual V850E2/Sx4-H 32 Hardware User’s Manual RENESAS MCUs V850E2/Sx4-H microcontrollers [Preliminary] All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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1SV265
Abstract: ISV233 DSK10L SVC253 DS135C 1SV234 SVC208 SVC231 SVC233 SVC234
Contextual Info: Continued from previous page VR V tz 30 16 - - 32 33 . ci (pot C2 (p F )t Package »yp« A p p tk a H m 37.0 to 42.0 (3 V) 14.8 to 18.2 (25 V) CP FM electronic tuning - 44 to 465 (2 V) 25.1 to 28.2 (8 V) CP FM electronic tuning - - 43.89 to 50.02 (2V) 17.65 to215(8V)
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