DS3677 Search Results

Contextual Info: DMP3037LSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -30V 32mΩ @ VGS = -10V 50mΩ @ VGS = -4.5V •       ID TC = +25°C -5.8A -4.6A NEW PRODUCT Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

MM4220DF/MM5220DF

Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
Contextual Info: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.

MIC710

Abstract: XC6875 MC1741L C4558C SG425 mc7724c NE533V General Instrument data book 741p SN75107
Contextual Info: Master Index and Cross Reference Guide M IL-M -38510 Program and Chip Information Operational Amplifiers Voltage Regulators Interface Circuits Voltage Comparators Consumer Circuits Other Linear Circuits Package Information and Mounting Hardware Application Notes

Contextual Info: ZXRE330 PRECISION MICROPOWER SHUNT VOLTAGE REFERENCES Description Pin Assignments The ZXRE330 is a low knee current 3.3V voltage reference. ZXRE330xSA SOT23 Offering tight tolerances and sharp knee characteristics – consuming only 1µA when the 3.3V reference voltage can no

Contextual Info: LM2901/ LM2901A/ LM2903/ LM2903A DUAL AND QUAD DIFFERENTIAL COMPARATORS Description Pin Assignments The LM2901/2903 series comparators consist of four and two independent precision voltage comparators with very low input offset voltage specification. They have been designed to operate from a

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

mte maxim

Abstract: GM 950 motorola 40n60 transistor
Contextual Info: nOTOKOLA SC -CXSTRS7R F> b4 D T | t,3 b 7 E S 4 □ D t.a n a - T - 'iy - iü a MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA MTE40N55 MTE40N60 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement Mode Silicon Gate TMOS These TM O S Power FETs are designed for high

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

DS1647D

Abstract: DS3647D
Contextual Info: Memory Support DS1647/DS3647, DS3677, DS161477DS36147, DS161777DS36177 Quad TRI-STATE MOS Memory I/O Registers General Description The D S 16 4 7 /D S 36 4 7 series are 4 -b it I/O b u ffe r registers intended fo r use in MOS m e m ory systems. The circu its

40n60 transistor

Abstract: MTE40N60 40n60 40N60 snubber 72SM MTE40N55 belleville washer T-39-15 diode n55 H3677
Contextual Info: n O T O K O L A SC -CXSTRS/R F > ~ b4 -T-'iy-lü D T | t . 3 b 7 2 S 4 DDtflllB Ö MOTOROLA SEMICONDUCTOR S É IS Â S lf TECHNICAL DATA Designer's Data Sheet M TE40N55 M TE40N60 If Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS