DS35408 Search Results
DS35408 Datasheets Context Search
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Contextual Info: DMN3135LVT 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS on TA = 25°C 60mΩ @ VGS = 10V 3.5A 100mΩ @ VGS = 4.5V 2.8A 30V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
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DMN3135LVT AEC-Q101 DS35408 | |
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Contextual Info: DMN3135LVT 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS on TA = 25°C 60mΩ @ VGS = 10V 3.5A 100mΩ @ VGS = 4.5V 2.8A 30V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
Original |
DMN3135LVT AEC-Q101 DS35408 | |
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Contextual Info: DMN3135LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS on TA = 25°C 47mΩ @ VGS = 10V 4.1A 70mΩ @ VGS = 4.5V 3.3A 30V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
Original |
DMN3135LVT AEC-Q101 DS35408 |