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    DMN3135LVT Search Results

    DMN3135LVT Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    DMN3135LVT
    		Diodes Incorporated 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF 183.46KB 6
    DMN3135LVT-7
    		Diodes Incorporated FETs - Single, Discrete Semiconductor Products, MOSFET N CH 30V 4.1A TSOT26 Original PDF 6
    DMN3135LVTQ-7
    		Diodes MOSFET BVDSS: 25V~30V TSOT26 T&R Original PDF 654.95KB 7
    SF Impression Pixel

    DMN3135LVT Price and Stock

    Diodes Incorporated

    Diodes Incorporated DMN3135LVT-7

    MOSFET 2N-CH 30V 3.5A TSOT26
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    DigiKey () DMN3135LVT-7 Cut Tape 2,924 1
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    DMN3135LVT-7 Digi-Reel 2,924 1
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    DMN3135LVT-7 Reel 2,300 3,000
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    Avnet Americas DMN3135LVT-7 Reel 20 Weeks 3,000
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    Mouser Electronics DMN3135LVT-7 1,294
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    Arrow Electronics DMN3135LVT-7 Cut Strips 39 20 Weeks 39
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    Newark () DMN3135LVT-7 Cut Tape 294 5
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    TME DMN3135LVT-7 1
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    NexGen Digital DMN3135LVT-7 1
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    Avnet Asia DMN3135LVT-7 20 Weeks 3,000
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    Avnet Silica DMN3135LVT-7 14 Weeks 3,000
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    Chip Stock DMN3135LVT-7 22,515
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    New Advantage Corporation DMN3135LVT-7 6,000 1
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    Vyrian DMN3135LVT-7 24,878
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    Win Source Electronics DMN3135LVT-7 19,015
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    Diodes Incorporated DMN3135LVTQ-7

    MOSFET 2N-CH 30V 3.5A TSOT26
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    DigiKey DMN3135LVTQ-7 Bulk 3,000
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    Avnet Americas DMN3135LVTQ-7 Reel 12 Weeks 3,000
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    Mouser Electronics DMN3135LVTQ-7
    • 1 $0.86
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    TME DMN3135LVTQ-7 3
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    DMN3135LVT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: DMN3135LVT 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS on TA = 25°C 60mΩ @ VGS = 10V 3.5A 100mΩ @ VGS = 4.5V 2.8A 30V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMN3135LVT AEC-Q101 DS35408 PDF

    Contextual Info: DMN3135LVT 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS on TA = 25°C 60mΩ @ VGS = 10V 3.5A 100mΩ @ VGS = 4.5V 2.8A 30V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMN3135LVT AEC-Q101 DS35408 PDF

    Contextual Info: DMN3135LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS on TA = 25°C 47mΩ @ VGS = 10V 4.1A 70mΩ @ VGS = 4.5V 3.3A 30V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMN3135LVT AEC-Q101 DS35408 PDF

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 PDF