ultrasonic water level sensor
Abstract: ultrasonic level transmitter LM90100 ultrasonic range cm level LM90-1001 water level controller with lcd display
Contextual Info: EchoSpan DS300350-REV:A TM Ultrasonic Level Transmitter Specifications Rear View Shown LU81: 8" to 16.4' 20 cm to 5m LU83: 8" to 26.2' (20 cm to 8m) LU84: 12" to 32.8' (30 cm to 10m) ± 0.2% of span in air Accuracy: LU81/83: 0.039" (1 mm) Resolution: LU84: 0.078" (2 mm)
|
Original
|
ds300350-revlu81/83lm90-1001ultrasonic water level sensor+4ultrasonic level transmitterlm90100ultrasonic range cm levelwater level controller with lcd display
|
PDF
|
Infrared Phototransistor
Abstract: QSB363 QEB363 QEB373
Contextual Info: SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSB363 PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) 0.055 (1.4) 0.008 (0.21)
|
Original
|
qsb363ds300357infrared phototransistorqeb363+1qeb373
|
PDF
|
Infrared Phototransistor
Abstract: phototransistor 500-600 nm QEB373 "infrared phototransistor" all datasheet phototransistor QEB363 npn phototransistor QSB363
Contextual Info: SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSB363 PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) 0.055 (1.4) 0.008 (0.21)
|
Original
|
qsb363ds300357infrared phototransistorphototransistor 500-600 nm+4qeb373all datasheet phototransistorqeb363npn phototransistor
|
PDF
|
DS300359
Abstract: "Infrared photodarlington" QSC133
Contextual Info: PLASTIC SILICON INFRARED PHOTODARLINGTON QSC133 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) EMITTER SCHEMATIC 0.100 (2.54) NOM COLLECTOR 0.155 (3.94) 0.018 (0.46)
|
Original
|
qsc133ds300359infrared photodarlington |
PDF
|
QRB1134
Abstract: QRB1133
Contextual Info: PHOTOTRANSISTOR REFLECTIVE OBJECT SENSORS QRB1133 QRB1134 PACKAGE DIMENSIONS 0.420 10.67 0.328 (8.33) 24.0 (609.60) MIN #26 AWG 0.150 (3.81) NOM (A) E (K) 0.226 (5.74) 0.373 (9.47) S (E) 0.703 (17.86) (C) 0.020 (0.51) 4X 0.150 (3.81) MIN 0.300 (7.62) 0.603 (15.32)
|
Original
|
qrb1133qrb1134qrb1133/1134ds300351 |
PDF
|
BY268
Contextual Info: BY268 / BY269 0.8A FAST RECOVERY HIGH VOLTAGE GLASS BODY RECTIFIER Features • · · Hermetically Sealed Glass Body Construction High Voltage to 1800V with Low Leakage Surge Overload Rating to 20A Peak A A B C D Mechanical Data · · · · · · SOD-57 Case: SOD-57, Glass
|
Original
|
by268by269od-57mil-std-202+2470khzds30035
|
PDF
|
QECXXX
Abstract: QSC113 QSC114C QECXXX LED
Contextual Info: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSC112 QSC113 QSC114 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) EMITTER SCHEMATIC 0.100 (2.54) NOM COLLECTOR 0.155 (3.94)
|
Original
|
qsc112qsc113qsc114qsc112/113/114+3qsc114cqecxxxqecxxx led
|
PDF
|
BY268
Abstract: BY269
Contextual Info: BY268 / BY269 0.8A FAST RECOVERY HIGH VOLTAGE GLASS BODY RECTIFIER Features • · · Hermetically Sealed Glass Body Construction High Voltage to 1800V with Low Leakage Surge Overload Rating to 20A Peak A A B C D Mechanical Data · · · · · · SOD-57 Case: SOD-57, Glass
|
Original
|
by268by269od-57mil-std-202+2470khzds30035
|
PDF
|
phototransistor infrared
Contextual Info: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSC112 QSC113 QSC114 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) EMITTER SCHEMATIC 0.100 (2.54) NOM COLLECTOR 0.155 (3.94)
|
Original
|
qsc112qsc113qsc114qsc112/113/114+2qsc114cphototransistor infrared
|
PDF
|
ADC14DS080
Abstract: ADC14DS080CISQ ADC14DS80
Contextual Info: ご注意：この日本語データシートは参考資料として提供しており内容が最新でない 場合があります。製品のご検討およびご採用に際しては、必ず最新の英文デー タシートをご確認ください。
|
Original
|
adc14ds08080mspsadc14ds80adc14ds080cisq |
PDF
|
qrb1114
Abstract: QRB1113 phototransistor as sensor Reflective Optical Sensor focused
Contextual Info: PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113 QRB1114 PACKAGE DIMENSIONS 0.420 10.67 E 0.328 (8.33) S 0.150 (3.81) NOM PIN 1 E PIN 2 0.373 (9.47) 0.226 (5.74) S PIN 3 0.703 (17.86) PIN 4 0.020 (0.51) 4X 0.150 (3.81) MIN 0.603 (15.32) 0.300 (7.62) 0.210 (5.33)
|
Original
|
qrb1113qrb1114qrb1113/1114ds300350+2phototransistor as sensorreflective optical sensor focused
|
PDF
|
QRC1133
Contextual Info: PHOTOTRANSISTOR REFLECTIVE OBJECT SENSORS QRC1133 PACKAGE DIMENSIONS 0.420 10.67 0.328 (8.33) 24.0 (609.60) MIN #26 AWG 0.150 (3.81) NOM (A) E (K) 0.226 (5.74) 0.373 (9.47) S (E) 0.703 (17.86) (C) 0.020 (0.51) 4X 0.150 (3.81) MIN 0.300 (7.62) 0.603 (15.32)
|
Original
|
qrc1133ds300353 |
PDF
|
QRB1113
Abstract: QRB1114 Photo interrupter application notes
Contextual Info: QRB1113/1114 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS FEATURES • No contact surface sensing 0.420 10.67 • Phototransistor output 0.328 (8.33) • Focused for sensing specular reflection 0.150 (3.81) NOM PIN 1 • Daylight filter on photosensor
|
Original
|
qrb1113/1114ds300350qrb1113qrb1114+1photo interrupter application notes
|
PDF
|
OPTICAL INTERRUPTER
Abstract: QRC1113 4 pin phototransistor Photo interrupter application notes high sensitivity reflective photo interrupter
Contextual Info: PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH QRC1113 PACKAGE DIMENSIONS 0.420 10.67 0.328 (8.33) 0.150 (3.81) NOM PIN 1 E PIN 2 0.373 (9.47) 0.226 (5.74) S PIN 3 0.703 (17.86) PIN 4 0.020 (0.51) 4X 0.150 (3.81) MIN 0.603 (15.32) 0.300 (7.62) 0.210 (5.33) REFLECTIVE
|
Original
|
qrc1113ds300352optical interrupter4 pin phototransistor+2photo interrupter application noteshigh sensitivity reflective photo interrupter
|
PDF
|
|
|
ADC14DS080
Abstract: ADC14DS080CISQ ADC14DS80 sd0a
Contextual Info: ご注意：この日本語データシートは参考資料として提供しており内容が最新でない 場合があります。製品のご検討およびご採用に際しては、必ず最新の英文デー タシートをご確認ください。
|
Original
|
adc14ds08080mspsadc14ds80adc14ds080cisq+1sd0a
|
PDF
|