DS1225 DATE CODE Search Results

P22220

Abstract: MIL-STD-883-2016 p22793 ds1230Y date code P-225-1 P22789 P22070
Contextual Info: RELIABILITY MONITOR DS1225AB-200 MAY '98 MONITOR-DALLAS DEVICE REVISION DATE CODE LOT NUMBER PACKAGE ASSEMBLY SITE DS1225 S 9806 100539 28 PIN MODULE DALLAS JOB_NO DESCRIPTION CONDITION P22069 SOLDERABILITY MIL-STD-883-2003 TOTAL: 3 1 WEEK P22070 PHYSICAL DIMENSIONS MIL-STD-883-2016

lot code

Abstract: DS1225 date code
Contextual Info: RELIABILITY MONITOR DS1225AB-200 MAY '98 MONITOR-DALLAS DEVICE REVISION DATE CODE LOT NUMBER PACKAGE ASSEMBLY SITE DS1225 S 9806 100539 28 PIN MODULE DALLAS JOB_NO DESCRIPTION P22069 P22070 CONDITION SOLDERABILITY MIL-STD-883-2003 TOTAL: PHYSICAL DIMENSIONS MIL-STD-883-2016

P20881

Abstract: P22015 P21891
Contextual Info: RELIABILITY MONITOR DS1225AB-200 MAY '98 MONITOR-DALLAS DEVICE REVISION DATE CODE LOT NUMBER PACKAGE ASSEMBLY SITE DS1225 S 9806 100539 28 PIN MODULE DALLAS JOB_NO DESCRIPTION CONDITION P22069 SOLDERABILITY MIL-STD-883-2003 TOTAL: 3 1 WEEK P22070 PHYSICAL DIMENSIONS MIL-STD-883-2016

P22518

Abstract: mar 9746 dallas date code ds1230 9830 TO92 P22522 P2274 P22071 P22405 P22403 DS2165Q
Contextual Info: RELIABILITY MONITOR STRESS: TEMP CYCLE CONDITIONS: -55 TO 125°C MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. DS1210S C1 JUL 98 P22399 9813 ANAM-KOREA AICL DN801581AAC 16 PIN SOIC 300 40 DS1210S C1 JUL 98 P22399 9813 ANAM-KOREA (AICL)

P2215

Abstract: P22102 P22372 P22121 40Pn B1 9742 P22071 dallas date code ds1230 208mil P22403
Contextual Info: RELIABILITY MONITOR STRESS: TEMP CYCLE CONDITIONS: -40 TO 85°C MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. PACKAGE READ POINT QTY FAIL DS2250T Y JUN 98 P22125 9814 DALLAS 101397 SIP STICK 100 11 DS2250T Y JUN 98 P22125 9814 DALLAS

P21256

Abstract: P22102 P22154 P22149 ds1302 dallas h 9740 P22021 P21308
Contextual Info: RELIABILITY MONITOR STRESS: TEMP CYCLE CONDITIONS: -40 TO 85°C MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. PACKAGE READ POINT QTY FAIL DS2250T Y JUN 98 P22125 9814 DALLAS 101397 SIP STICK 100 11 DS2250T Y JUN 98 P22125 9814 DALLAS

interfacing of RAM and ROM with 8086

Abstract: interfacing of memory devices with 8086 interfacing of RAM and ROM with 8088 interfacing intel 8086 with ram and rom 386SL 8088 microprocessor circuit diagram intel 8086 internal structure 8086 with eprom 8088 intel microprocessor pin diagram 8088 memory interface SRAM
Contextual Info: APPLICATION NOTE 63 Application Note 63 Using Nonvolatile Static RAMs Vast resources have been expended by the semiconductor industry trying to build a nonvolatile random access read/write memory. The effort has been undertaken because nonvolatile RAM offers several advantages

interfacing of RAM and ROM with 8086

Abstract: BEST BIOS PROGRAMMING AND DATA FOR EEPROM interfacing of memory devices with 8086 interfacing of RAM with 8086 8086 with eprom dallas date code ds1250 DS1225 d ram memory ic interfacing of RAM and ROM with 8088 isa bus interfacing with microprocessor 8088
Contextual Info: APPLICATION NOTE 63 Application Note 63 Using Nonvolatile Static RAMs Vast resources have been expended by the semiconductor industry trying to build a nonvolatile random access read/write memory. The effort has been undertaken because nonvolatile RAM offers several advantages

386SL intel

Abstract: dallas date code ds1230 ram DS1225 Intel EEPROM 32kx8
Contextual Info: APPLICATION NOTE 63 DALLAS Application Note 63 Using Nonvolatile Static RAMs s e m ic o n d u c to r Vast resources have been expended by the semicon­ ductor industry trying to build a nonvolatile random ac­ cess read/write memory. The effort has been undertak­

dallas ds1213

Abstract: DS1213 DS1210 DS1213 DALLAS ON SHIP SYSTEM dallas ds1230 DS1210 DALLAS DS1220 DS1217A DS1218
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: May 28, 1996 Subject: PRODUCT CHANGE NOTICE – E61003 Description: Tester Change for the DS1210 and DS1218 Products Description of Change: The test hardware for all test steps on the DS1210 and DS1218 products is being changed. A new tester

386SL intel

Abstract: 386SL how to read Maxim date code DS1220 8086 with eprom BEST BIOS PROGRAMMING AND DATA FOR EEPROM APP540 practical applications of 8086 microprocessor DS1220 DS1225 DS1245
Contextual Info: Maxim > App Notes > MEMORY Mar 29, 2001 Keywords: NVSRAM, DRAM, SRAM, EEPROM, shadow RAM, NV Memory, MK48Z08, MK48Z18, nvsrams, NV SRAMs APPLICATION NOTE 540 Using Nonvolatile Static RAMs Abstract: Vast resources have been spent by the semiconductor industry to build high-speed nonvolatile

2764 eprom

Contextual Info: 19-5625; Rev 11/10 DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES • •          PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM

Contextual Info: 19-5625; Rev 11/10 DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES • •          PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM

DS1225AB

Abstract: DS1225AB-70 DS1225AD DS1225AD-70 DS1225 ICC01
Contextual Info: 19-5625; Rev 11/10 DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES • •          PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM

2764 eprom PINOUT

Abstract: dallas ds1225y DS1225Y DS1225 DS1225Y-150 DS1225Y-170 DS1225Y-200
Contextual Info: DS1225Y DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 28 VCC A12 2 27 WE A7 3 26 NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE • Full +10% operating range A0 10 19

DS1225

Abstract: M48Z08 M48Z18 SOH28 DS1225 equivalent
Contextual Info: M48Z08 M48Z18 64 Kbit 8Kb x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATICPOWER-FAILCHIP DESELECTand WRITE PROTECTION WRITE PROTECT VOLTAGES

M4228

Contextual Info: M48Z08 M48Z18 ¿ = 7 SGS-THOMSON 64Kb 8K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FA1L CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES SNAPHAT (SH) Battery ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and

DS1225Y

Contextual Info: DALLAS SEMICONDUCTOR FEATURES DS1225Y 64K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Datais automatically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM • Unlimited write cycles

DS1225 circuit diagram

Abstract: DS1225 M48Z08 M48Z18 SOH28 DS1225 date code
Contextual Info: M48Z08 M48Z18 64Kb 8K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES

EEPROM 2864

Abstract: 2864 eeprom 2764 eprom PINOUT Ram 2864 EPROM 2764 pRoM 2764 2764 EEPROM DS1225Y EEPROM 2864 CMOS DS1225
Contextual Info: DS1225Y DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 28 VCC A12 2 27 WE A7 3 26 NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE • Full ±10% operating range A0 10 19

Contextual Info: M48Z08 A 7 # . [M»[g[LI gmMD(gS_ M48Z18 / T T S G S - T H O M S O N 64Kb (8K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES SNAPHAT (SH) Battery ■ READ CYCLE TIME EQUALS WRITE CYCLE

DS1225Y

Abstract: DS1225 DS1225Y-150 DS1225Y-170 DS1225Y-200
Contextual Info: DS1225Y DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 28 VCC A12 2 27 WE A7 3 26 NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE • Full ±10% operating range A0 10 19

DS1225 equivalent

Abstract: DS1225 M48Z08 M48Z18 SOH28
Contextual Info: M48Z08 M48Z18 64 Kbit 8Kb x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES

48Z18

Abstract: 48Z1 48z08
Contextual Info: F Z J SGS-THOMSON M48Z08 ^ 7 i K» ô [iL[imMO(êS_ M48Z18 64Kb (8K x 8) ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES SNAPHAT (SH) Battery ■ READ CYCLE TIME EQUALS WRITE CYCLE