MK48Z08, Search Results

Contextual Info: M48Z08 M48Z18 / 3 T SGS-THOMSON * 7 /. IM niBIM ilUICTtBllKSg CMOS 8K x 8 ZEROPOWER SRAM • PIN and FUNCTION COMPATIBLE with the MK48Z08,18 ■ SELF CONTAINED BATTERY in the CAPHAT DIP PACKAGE ■ SMALL OUTLINE PACKAGE PROVIDES DI­ RECT CONNECTION for a SNAPHAT HOUS­

Contextual Info: f Z J ^7# S C S -T H O M S O N M K 4 8 Z 0 8 ,1 8 M K 4 8 Z 0 9 ,1 9 CMOS 8K x 8 ZEROPOW ER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ PREDICTED WORST CASE BATTERY LIFE OF

MK48Z08 equivalent

Abstract: MK48Z09 MK48Z08 MK48Z18 PHDIP thomson tv circuit diagram
Contextual Info: 52E S G » • □□3Ô37G S - T H O M S O « e r a bSb ■ S G T H T - V ^ - 2 3 - |2_ N M K 4 8 Z 0 8 .1 8 « M K 4 8 Z 0 9 ,1 9 S G S - TH OH SO N CMOS 8K x 8 ZEROPOWER SRAM ■ INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­

M48Z08

Abstract: M48Z18 MK48Z08 SOH28
Contextual Info: M48Z08 M48Z18 CMOS 8K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATICPOWER-FAIL CHIP DESELECTand WRITE PROTECTION CHOICE of TWO WRITE PROTECT

MK48T08

Abstract: M48Z02 Zeropower MK48Z02 M48Z02 date code M48Z18 Date Code Formats diodes St Microelectronics M48T02/12 M48Z08 MK48T MK48Z08
Contextual Info: M48T08 M48T18 CMOS 8K x 8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK and POWER-FAIL CONTROL CIRCUIT BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS CLOCK ACCURACY of ± 1 MINUTE a MONTH, @ 25°C

m48z08

Contextual Info: M48Z08 M48Z18 CMOS 8K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECTand WRITE PROTECTION CHOICE of TWO WRITE PROTECT

MKI48Z18

Contextual Info: Æ 7 SGS-THOMSON MKI48Z18 ^ 7# l* ® S iLi(M (ô)K i(g S CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEMPERATURE RANGE -40’C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL C O N TR O L C IR C U IT AND ENERGY SOURCE ■ UNLIMITED WRITE-CYCLES.

stm 8322

Abstract: 48Z08 MK48Z09
Contextual Info: r z 7 S G S -T H O M S O N *> 7 M G W T O ilL I^ G M D ! M K 4 8 Z 0 8 ,1 8 M K 4 8 Z 0 9 ,1 9 CMOS 8K x 8 ZEROPOW ER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE

Contextual Info: M48Z08 M48Z18 / = T SGS-THOMSON 7 # ^ [ *[ E i[ L [ I M ( Q M ( g S CMOS 8K x 8 ZEROPOWER SRAM • PIN and FUNCTION COMPATIBLE with the MK48Z08.18 ■ SELF CONTAINED BATTERY in the CAPHAT DIP PACKAGE ■ SMALL OUTLINE PACKAGE PROVIDES DI­ RECT CONNECTION for a SNAPHAT HOUS­

dallas ds1225y

Abstract: NVSRAM DS1225Y MK48Z08 MK48Z09 STK10C68 STK11C68 STK12C68 MK48Z30 DS1225D
Contextual Info: nvSRAM vs. Battery Back-up SRAMs Comparison of SIMTEK nvSRAM vs. Battery Back-up SRAMs This document summarizes two options for nonvolatile memory: Simtek Corporation's nvSRAM and battery backed-up SRAM from other manufacturers. What is an nvSRAM? Simtek's nvSRAM is a high performance SRAM with a

Contextual Info: M48Z08 M48Z18 r Z T S G S -T H O M S O N ^ 7 /, no iM iyi Sîis iD (gi CMOS 8K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and

48Z18

Abstract: 48Z08
Contextual Info: r z 7 S C S -T H O M S O N “ 7# M K 4 8 Z 0 8 .1 8 M K 4 8 Z 0 9 .1 9 CMOS 8K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POW ER SRAM, POW ER-FAIL CO NTRO L CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIM E EQUALS W RITE-CYCLE TIME.