DS1209 Search Results

DS1204U

Contextual Info: DS1209S-B1 DS1209S-B1 DALLAS Wireless to 3-Wire Converter Chip SEMICONDUCTOR PIN CONNECTIONS FEATURES • Adapts a wireless device to a 3-wire serial port DQ, CLK, and RST\ signals V8ATH 7 I I 1+ I 13 I 12 I 11 1 10 I S 9 B 16 1 vccoŒ V CCI Œ 3 rod 4 15

DS1207

Abstract: DS1209S-B1 DS1204u DS1209B-S1 DS1209
Contextual Info: DS1209S-B1 DS1209S-B1 r% A i L A S Wireless to 3-Wire Converter Chip SEMICONDUCTOR FEATURES PIN CONNECTIONS • Adapts a wireless device to a 3-wire serial port DQ, CLK, and RST\ signals • Up to 65,536 devices can be uniquely addressed within the same wireless proximity

Contextual Info: DS1209S-B1 PRELIMINARY DS1209S-B1 DALLAS SEMICONDUCTOR Wireless to 3-W ire Converter Chip FEATURES PIN CONNECTIONS • Adapts a wireless device to a 3-wire serial port DQ, CLK, and R ST\ signals • Up to 65,536 devices can be uniquely ad­ dressed within the same wireless proximity

624C

Abstract: DS1204U DS1205S DS1228S DS1640
Contextual Info: DALLAS SEMICONDUCTOR DS1205S M ultiKey Chip FEATURES PIN ASSIGNMENT • T h re e s e c u re re a d /w rite d a ta p a rtitio n s o f 3 8 4 bits VCCI la s e r e tc h e d 15 3 14 m DQ o n 4 13 ~ n n GND 5 12 CLK QC 6 11 ~n~i d q o e MC Q j- 7 10 m GND m~ NC

DS1237S

Abstract: DS1666 DS2011D DS1000 DS1000M DS1211 DS1212 DS1215 DS1259 DS1621
Contextual Info: DALLAS DS1259 Battery Manager Chip s e m ic o n d u c to r FEATURES • Facilitates uninterruptible power • Uses battery only when primary Vqc ¡s n°t available PIN ASSIGNM ENT NC[ 1 ^ 16 ] VCCI VCCI vbat[ 2 15 ] • Low forward voltage drop bf[ 3 14 ]

DS2015

Abstract: DS6068A DS1209S-B1 DS2267 WIRELESS RF SERIAL LINK
Contextual Info: DALLAS SEMICONDUCTOR CORP 3TE D El Sbl4130 OOGBIS? 3 ID A L DS2267 DALLAS S E M IC O N D U C T O R DS2267 Wireless Transceiver Stik "TU FEATURES PACKAGE DESCRIPTION • Wireless transmitter/receiver subsystem with 3-wire serial data port • Two-way, half-duplex RF link has range In

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

RF7321

Abstract: band21 RFMD LTE Band 40 rf732 RF7321PCBA-410 LTE RFMD mems matching network RFMD PA LTE
Contextual Info: RF7321 3V LTE Band 11, 21 Linear PA Module Package Style: Module, 10-Pin, 3mm x 3mm x 0.8mm Features            Fully Compliant to LTE Modulation LTE Bands 11, 21 Best-in-Class Efficiency 47%, +28.5dBm Rel 99 output power High Power Gain : 28dB

ebl41

Abstract: DS1228S DS1867 ordering information DS1669 Digital Pot IC DS1640
Contextual Info: DALLAS SEMICONDUCTOR FEATURES DS1806 Digital Sextet Potentiom eter PIN ASSIGNMENT • Six digitally controlled 6 4 -position potentiom eters 1 20 □ W2 C 2 19 □ H1 L1-3 C 3 18 □ H2 4 17 5 16 □ □ H3 W4 C C L4-6 C 6 15 □ H5 W6 C 7 14 □ W5 D S 1806-010 - 10K ohm

DS1640

Contextual Info: DS1667 DALLAS DS1667 Digital Resistor with OP AM P s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • Two digitally controlled 256-position potentiom eters II 20 ^ V cc INVO C 19 □ OUTO VB C 18 □ SOUT wi C 17 □ WO H1 C 16 □ HO L1 C 15 □ L0 RST C

use of zenner diode in 3 pin regulator circuits

Abstract: DS1666 DS2011D opto isolator IC DS1000 DS1000M DS1211 DS1215 DS1231 DS1231S
Contextual Info: DS1231/S D A L L A S D S 1231/S Power M onitor Chip s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • W arns processor of an impending power failure in Q 1 8 ] vcc 2 7 ] NMÏ to lE 3 6 ] RST 4 5 ] RST • Provides tim e for an orderly shutdown modeE • Prevents processor from destroying

DS1666

Abstract: DS2011D 20-PIN DS1267 DS1867 DS1867-10 DS1867-100 DS1867-50 2BL4 2fc eeprom
Contextual Info: DALLAS SEMICONDUCTOR DS1867 Dual Digital Potentiometer with EEPROM FEATURES PIN ASSIGNMENT • Nonvolatile version of the popular DS1267 VbC NC C H1 C L1 C wi E RSTÜ CLK E GND E • Low power consumption, quiet, pumpless design • Operates from single 5V or ±5V supplies

DS2107AS

Abstract: DS1209 DALLAS SOIC PRODUCT CHANGE DS1211S DS1640
Contextual Info: DS1667 DALLAS DS1667 Digital Resistor with OP AM P s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • Two digitally controlled 256-position potentiom eters II 20 ^ V cc INVO C 19 □ OUTO VB C 18 □ SOUT wi C 17 □ WO H1 C 16 □ HO L1 C 15 □ L0 RST C

DS1209

Abstract: Zener diode 0740 DS1640
Contextual Info: DS1231/S D A L L A S D S 1231/S Power M onitor Chip s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • W arns processor of an impending power failure in Q 1 8 ] vcc 2 7 ] NMÏ to lE 3 6 ] RST 4 5 ] RST • Provides tim e for an orderly shutdown modeE • Prevents processor from destroying

rf6515

Contextual Info: RF6515 3.3V, 2.4GHz FRONT-END MODULE  Applications    ZigBee 802.15.4 Based Systems for Remote Monitoring and Control Smart Meters for Energy Management. 2.4GHz ISM Band applications. Portable battery powered equipment. NC VCC VCC ISO 11 TXN

ds1236s

Abstract: battery 038 DS1640
Contextual Info: DALLAS DS1259 Battery Manager Chip s e m ic o n d u c to r FEATURES • Facilitates uninterruptible power PIN ASSIGNM ENT NC[ 1 vbat [ • Low forward voltage drop bf [ • Powerfail signal interrupts processororwrite protects memory N c[ [ • Uses battery only when primary Vqc ¡s n°t available

Contextual Info: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,

RFDA0056

Contextual Info: RFDA0056 RFDA0056Digital Controlled Variable Gain Amplifier 300MHz to 1100MHz, 6Bit 0.5dB LSB Control Digital Controlled Variable Gain Amplifier 300MHz to 1100MHz, 6-Bit 0.5dB LSB Control  GND 7  Cellular, 3G Infrastructure  WiBro, WiMax, LTE 

TQP20002

Abstract: rfcm3080
Contextual Info: RFCM3080 RFCM3080 40MHz to 1003MHz GaAs/GaN Push Pull MODULE 40MHz TO 1003MHz GaAs/GaN PUSH PULL MODULE Package: 9-pin, 11.0mm x 8.5mm x 1.375mm Current Setting V+ Features   Excellent Linearity Superior Return Loss Performance INPUT  Extremely Low Distortion

100-20L

Abstract: b711 DS1666 DS2011D part 100-20L 20-PIN DS1806 DS1806-010 DS1806-050 DS1806E
Contextual Info: DALLAS SEMICONDUCTOR FEATURES DS1806 Digital Sextet Potentiom eter PIN ASSIGNMENT • Six digitally controlled 6 4 -position potentiom eters 1 20 □ W2 C 2 19 □ H1 L1-3 C 3 18 □ H2 4 17 5 16 □ □ H3 W4 C C L4-6 C 6 15 □ H5 W6 C 7 14 □ W5 D S 1806-010 - 10K ohm

DS1666

Abstract: DS2011D DS1000 DS1211 DS1667 DS1667-10 DS1667-100 DS1667-50 DALLAS SOIC PRODUCT CHANGE DS1211S DS1640
Contextual Info: DS1667 DALLAS DS1667 Digital Resistor with OP AM P s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • Two digitally controlled 256-position potentiom eters II 20 ^ V cc INVO C 19 □ OUTO VB C 18 □ SOUT wi C 17 □ WO H1 C 16 □ HO L1 C 15 □ L0 RST C

DS1203

Abstract: DS1209 DS1203-50 receiver sleep power saving
Contextual Info: Dallas Semiconductor 9* Micro Power Receiver r FEATURES • Dual band pass receiver discriminates noise and minimizes power • Ultra low power listening channel gives longevity to 3 volt lithium supply • 20 KHZ channel continuously listens then powers up a 200 KHZ channel on demand

DS2013D

Abstract: DS-1000 ely 0325 DS1640
Contextual Info: DS1231/S D A L L A S D S 1231/S Power M onitor Chip s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • W arns processor of an impending power failure in Q 1 8 ] vcc 2 7 ] NMÏ to lE 3 6 ] RST 4 5 ] RST • Provides tim e for an orderly shutdown modeE • Prevents processor from destroying

GaN BJT

Contextual Info: RFPD2940 RFPD2940 45MHz to 1003MHz GaAs/GaN Power Doubler Hybrid 45MHz to 1003MHz GaAs/GaN Power Doubler Hybrid Package: SOT-115J +VB Features  Extremely High Output Capability  Excellent Linearity  Superior Return Loss Performance  Extremely Low Distortion