DS120620 Search Results

Contextual Info: RFSW2100D 75W GaN-onSiC Reflective SPDT RF Switch RFSW2100D Proposed 75W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Features  Broadband Operation 30MHz to 6000MHz  Advanced GaN HEMT Technology  2GHz Typical Performance Insertion Loss ~ 0.25dB Isolation ~ 40dB

"RF Switch"

Abstract: rf switch RFMD HEMT GaN SiC SiC BJT RFSW2100D GaN BJT
Contextual Info: RFSW2100D 75W GaN-onSiC Reflective SPDT RF Switch RFSW2100D Proposed 75W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Features  Broadband Operation 30MHz to 6000MHz  Advanced GaN HEMT Technology  2GHz Typical Performance Insertion Loss ~ 0.25dB Isolation ~ 40dB

Contextual Info: RFPA2089 RFPA2089 InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz Package: SOT-89 GND 4 Features  -60dBc ACPR at 13dBm WCDMA  0.25W Output Power P1dB  Excellent Linearity to DC Power Ratio 

RFPA2089

Abstract: RFMD PA LTE
Contextual Info: RFPA2089 RFPA2089 InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz Package: SOT-89 GND 4 Features  -60dBc ACPR at 13dBm WCDMA  0.25W Output Power P1dB  Excellent Linearity to DC Power Ratio 