DS116 Search Results

DS1669 replacement

Abstract: DS1669 equivalent DS11668 DS1267 DS1666 1N5818 AN1176 APP1176 DS1667 DS1668
Contextual Info: Maxim > App Notes > DIGITAL POTENTIOMETERS DISPLAY DRIVERS Keywords: LCD contrast, contract control, brightness control, DS11668, DS1669, Xicor Mar 29, 2001 APPLICATION NOTE 1176 LCD Contrast Control Using Dallas Semiconductor Digital Potentiometers Abstract: Manufacturers of portable equipment, workstations, small handheld computers, cell phones, and video

DS377

Contextual Info: IDT 89EB-LOGAN-19 Evaluation Board Manual Evaluation Board: 18-692-001 February 2011 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: (800) 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2011 Integrated Device Technology, Inc.

Contextual Info: DT456P P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim WWm -H E K- -H Mechanical Data • •

Contextual Info: DT455N N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim - A -► h -B -H

Contextual Info: DT014L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim c D I T I -H E K- -H T hi S Vm K -M - Mechanical Data

Contextual Info: DT2955 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim - A - ► >k D c ' t

national timer switch tb 179

Abstract: national timer tb 179 LMX5251 dmc 20 deutsch dmc 22 deutsch ds071 DS101 fm transistor radio mini project CP3BT10 CP3BT10G38
Contextual Info: CP3BT10 Reprogrammable Connectivity Processor with Bluetooth and USB Interfaces 1.0 General Description The CP3BT10 connectivity processor combines high performance with the massive integration needed for embedded Bluetooth applications. A powerful RISC core with on-chip

Contextual Info: CP3CN17 CP3CN17 Reprogrammable Connectivity Processor with CAN Interface Literature Number: SNOSA98B CP3CN17 Reprogrammable Connectivity Processor with CAN Interface 1.0 General Description The CP3CN17 connectivity processor combines a powerful RISC core with on-chip SRAM and Flash memory for high

F300H

Abstract: FC44H BIT137
Contextual Info: CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces 1.0 General Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for embedded Bluetooth applications. A powerful RISC core with on-chip

USB cable AWM 2725 rx tx pinout

Contextual Info: CP3BT26 CP3BT26 Reprogrammable Connectivity Processor with Bluetooth, USB, and CAN Interfaces Literature Number: SNOSAE5C CP3BT26 Reprogrammable Connectivity Processor with Bluetooth , USB, and CAN Interfaces 1.0 General Description The CP3BT26 connectivity processor combines high performance with the massive integration needed for embedded

F1A4

Abstract: TR-28 national timer switch tb 208
Contextual Info: CP3BT26 Reprogrammable Connectivity Processor with Bluetooth , USB, and CAN Interfaces 1.0 General Description The CP3BT26 connectivity processor combines high performance with the massive integration needed for embedded Bluetooth applications. A powerful RISC core with on-chip

Contextual Info: UNITRODE CORP T 2 9347963 D F | ^ 3 4 7 c] b 3 U N I T R O D E CORP 92D 10624 POWER MOSFET TRANSISTORS D G lG b S M D U F N 2 2 0 U F N 2 2 1 200 Volt, 0.8 Ohm N-Channel U F N 2 2 2 U F N 2 2 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

Contextual Info: CP3UB17 CP3UB17 Reprogrammable Connectivity Processor with USB Interface Literature Number: SNOSA99C CP3UB17 Reprogrammable Connectivity Processor with USB Interface 1.0 General Description The CP3UB17 connectivity processor combines a powerful RISC core with on-chip SRAM and Flash memory for high

ML6553-1

Abstract: L6550-100D ECL logic
Contextual Info: jm a m COAXIAL PIN DIODE SWITCH ML 6550-100D Series SPST REFLECTIVE SWITCH WITH ECL COMPATIBLE DRIVER 0.5 TO 18.0 GHz FEATURES ♦ ECL Compatible ♦ Fast Switching ♦ Broad Frequency Ranges ♦ SMA Connectors ♦ Hermetically Sealed DESCRIPTION The M L6550-100D series o f ECL switches from M /A-COM Lid offers high isolation and low insertion loss in a

bddf

Contextual Info: CP3SP33 www.ti.com SNOSCW5 – MAY 2013 Connectivity Processor with Cache, DSP, and Bluetooth , USB, and Dual CAN Interfaces Check for Samples: CP3SP33 1 Introduction 1.1 Features 123 • CPU Features – Fully static RISC processor core, capable of operating from 0 to 96 MHz with zero

Contextual Info: VISHAY DT2955 [LITER]!!' P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWE R S EMICON DUCTO R j Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223

DS11

Abstract: DT014L
Contextual Info: DT014L VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /l i t e w î i I P O W E R S E M IC O N D Ü C T O R I Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance

DS11

Abstract: DT452AP
Contextual Info: VISHAY DT452AP /l i t e w î i P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR I P O W E R S E M IC O N D Ü C T O R I Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance

DS11

Abstract: DT3055
Contextual Info: VISHAY DT3055 /l i t e w î i N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR I P O W E R S E M IC O N D Ü C T O R I Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance

AMCC DATE CODE MARKING

Abstract: amcc s3155 AMCC year code S3155 GR-253-ILR p13n10
Contextual Info: Part Number S3155 Revision 5.02 – March 29, 2006 S3155 Data Sheet SONET/SDH/ATM OC-48 Transceiver with CDR FEATURES • • • • • • • • • • • • • • • • • • • • APPLICATIONS 650 mW typical power Integrated clock data recovery

DS11

Abstract: DT456P hs sot223 transistor 614
Contextual Info: DT456P VISHAY P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /l i t e w î i I P O W E R S E M IC O N D Ü C T O R I Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance

national timer switch tb 179

Contextual Info: CP3BT13 Reprogrammable Connectivity Processor with Bluetooth and CAN Interfaces General Description The CP3BT13 connectivity processor combines high performance with the massive integration needed for embedded Bluetooth applications. A powerful RISC core with on-chip

Contextual Info: CP3UB26 Reprogrammable Connectivity Processor with USB and CAN Interfaces 1.0 General Description The CP3UB26 connectivity processor combines high performance with the massive integration needed for embedded applications. A powerful RISC core with on-chip SRAM

Q 371 Transistor

Abstract: tl 72 oz DS11 DT410EL
Contextual Info: DT410EL VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /l i t e w î i I P O W E R S E M IC O N D Ü C T O R I Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance