UFN221 Search Results

ufn220

Abstract: UFN222
Contextual Info: POWER MOSFET TRANSISTORS 200 Volt, 0.8 Ohm N-Channel UFN220 UFN221 UFN222 UFN223 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R d s i o m and a high transconductance.

Contextual Info: UNITRODE CORP T 2 9347963 D F | ^ 3 4 7 c] b 3 U N I T R O D E CORP 92D 10624 POWER MOSFET TRANSISTORS D G lG b S M D U F N 2 2 0 U F N 2 2 1 200 Volt, 0.8 Ohm N-Channel U F N 2 2 2 U F N 2 2 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

UFN540

Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
Contextual Info: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist­ ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State