DS1108 Search Results

Contextual Info: RF1156 BROADBAND LOW POWER SP5T SWITCH Package Style: QFN, 16-pin, 3mmx3mm RF1156 RF1 Features       RF2 450MHz to 2.69GHz Operation Very Low Insertion Loss: Cell Band 0.40dB PCS Band 0.55dB High Isolation: Cell Band 30dB PCS Band 22dB Compatible With Low Voltage

Contextual Info: NBB-402 NBB-402Cascadable Broadband GaAs MMIC Amplifier DC to 8GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz Package Style: MPGA, Bowtie, 3x3, Ceramic Features      Reliable, Low-Cost HBT Design 15.0dB Gain, +15.8dBm P1dB at2GHz High P1dB of

RF1602

Contextual Info: RF1602 RF1602Broadband SPDT Switch BROADBAND SPDT SWITCH Package: QFN, 2mmx2mmx0.55mm RF1602 Features    Low Frequency to 3.5GHz Operation Low Insertion Loss, Typ. 0.3dB at 1GHz RF1 Very High Isolation, Typ. 42dB at 1GHz RF2  High Linearity, IIP2 Typ. 129dBm

R4003

Abstract: hdr1x6 RF5A 7915m
Contextual Info: RF1156 BROADBAND LOW POWER SP5T SWITCH Package Style: QFN, 16-pin, 3mmx3mm RF1156 RF1 Features       RF2 450MHz to 2.69GHz Operation Very Low Insertion Loss: Cell Band 0.40dB PCS Band 0.55dB High Isolation: Cell Band 30dB PCS Band 22dB Compatible With Low Voltage

sta5063

Abstract: 2.4 ghZ rf transistor
Contextual Info: SZM-5066Z 5.0V, 5GHz HIGH POWER LINEAR POWER AMPLIFIER     GND VBIAS2 GND VB2B VB2B RFOUT RFOUT VDET 21 GND 20 GND VC1A VC1A  IEEE802.11a/n and IEEE802.16e Applications HyperLAN WiFi Systems Commercial and Consumer Systems Portable Battery-Powered

rfvc1823

Contextual Info: RFVC1823 RFVC1823Low Noise MMIC VCO with Buffer Amplifier LOW NOISE MMIC VCO WITH BUFFER AMPLIFIER Package: QFN, 24-Pin, 4mmx4mm Features      6.1GHz to 6.75GHz Operation -101 dBc/Hz Phase Noise at 100kHz Offset +8.0 dBm POUT No External Resonator or

RF3228

Contextual Info: RF3228 QUAD-BAND GMSK POLAR EDGE TXM, 2 RX AND 3 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2         Applications     Battery Powered 3G

103dBc

Contextual Info: RFVC1822 RFVC1822Low Noise MMIC VCO with Buffer Amplifier LOW NOISE MMIC VCO WITH BUFFER AMPLIFIER Package: QFN, 24 Pin, 4mm x 4mm Features       5.0GHz to 5.5GHz Operation 103dBc/Hz Phase Noise at 100kHz offset +9.0dBm POUT No external resonator or

ds130 diode

Abstract: ds130 diode 1N4148 SMD diode array SMD DIODE 1N4148 PACKAGE dual diode 1N4148 SMD DS-130 DS1185 smd diode arrays DS1103
Contextual Info: DS130 thru DS1185 Equivalent To: MMAD130 thru MMAD1185 I n te r n a t/ onal S e m ic o n d u c t o r , I n c . SURFACE MOUNT DIODE DIP ARRAYS ISI Part # Motorola Part # Circuit Package DS130 M M AD130 1 S M B D 2-7 D S 1 103 M M A D 11 03 2 S M B D 2-7 D S 1 104

RFVC1825

Contextual Info: RFVC1825 RFVC1825Low Noise MMIC VCO with Buffer Amplifier LOW NOISE MMIC VCO WITH BUFFER AMPLIFIER Package: QFN, 24 Pin, 4mm x 4mm Features       7.8GHz to 8.7GHz Operation -107dBc/Hz Phase Noise at 100KHz offset +11.0 dBm POUT No external resonator or

Contextual Info: RF3025 RF3025SPDT, High Isolation, Single Control, Absorptive Switch SPDT, HIGH ISOLATION, SINGLE CONTROL, ABSORPTIVE SWITCH Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features The RF3025 is a high isolation single-pole double-throw SPDT absorptive

Contextual Info: RFSA4013 RFSA4013 Temperature Compensating Attenuator TEMPERATURE COMPENSATING ATTENUATOR Features 12 GND VDD GND GND NC 2 11 NC RFIN 3 10 RFOUT 9 NC +85dBm IIP2 Typical ATTEN NC 4 High 1dB Compression Point >+30dBm  Low Supply Current 1mA Typical  5V Power Supply

RF7242

Abstract: RFMD PA LTE RFMD LTE Band 40
Contextual Info: RF7242 3V W-CDMA BAND 2 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mmx3mmx1.0mm VBAT 10 VCC 1 Features           AMP HSDPA /HSUPA /HSPA+/LTE Low Voltage Positive Bias Supply 3.0V to 4.2V +28.5dBm Linear Output Power (+27.5dBm HSDPA

QFN "200 pin" PACKAGE

Abstract: RFVC1803PCK-410 RFVC1803 DS110829
Contextual Info: RFVC1803 RFVC1803 Wideband MMIC VCO with Buffer Amplifier, 6GHz to 9GHz WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 6GHZ TO 9GHZ Package: QFN, 4mmx4mmx1.1mm Features  Wideband Performance  POUT =+3.5dBm Typical  External Resonator Not Required  Single Bias Supply: +5V at 53mA

t40c

Abstract: ma5250
Contextual Info: RFVC1802 RFVC1802 Wideband MMIC VCO with Buffer Amplifier, 4GHz to 8GHz WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 4GHZ TO 8GHZ Package: QFN, 4mmx4mmx1.1mm Features  Wideband Performance  POUT =+4.0dBm Typical  External Resonator Not Required  Single Bias Supply: +5V at 53mA

lna c band

Contextual Info: RF5516 3.3V 5GHz 802.11a/n FRONT-END MODULE GND LNA EN SW TX SW RX Package Style: QFN, 16-pin, 3.0mmx3.0mmx0.5mm 16 15 14 13 Features    1 HB RX Single Supply Voltage 3.0V to 4.8V Integrated 5GHz Amplifier, LNA, and SPT2T TX/RX Switch POUT =15.5dBm, 11a, OFDM

RF7248

Abstract: RFMD LTE Band 40 RFMD PA LTE
Contextual Info: RF7248 3V W-CDMA BAND 8 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mmx3mmx1.0mm VBAT 10 VCC 1 Features           AMP HSDPA /HSUPA /HSPA+/LTE Low Voltage Positive Bias Supply 3.0V to 4.2V +28.5dBm Linear Output Power (+27.5dBm HSDPA

Contextual Info: RF3229 QUAD-BAND GMSK TXM, 2 RX AND 3 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2        Applications    Battery Powered 3G Handsets GSM850/EGSM900/DCS/

Contextual Info: NBB-312 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Package: MPGA, Bowtie, 3 x 3, Ceramic Features      Pin 1 Indicator Reliable, Low-Cost HBT Design 12.5dB Gain High P1dB of +15.8dBm at 6GHz Single Power Supply Operation 50 I/O Matched for High

Contextual Info: RFDA2026 RFDA2026Digital Controlled Variable Gain Amplifier DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 1400MHz to 2700MHz, 6-BIT 0.5dB LSB CONTROL Package Style: MCM 28-Pin, 6.0mmx6.0mm Features  Frequency Range 1400MHz to 2700MHz  6-Bit Digital Step Attenuator

rfmd mmic

Abstract: SGA-3286Z SGA3286ZSR
Contextual Info: SGA3286Z SGA3286ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features The SGA3286Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage

Contextual Info: RFRX1701 RFRX1701 17.7GHz to 26.5GHz GaAs MMIC 17.7GHz TO 26.5GHz GaAs MMIC IQ DOWN-CONVERTER Package: QFN, 32-Pin, 5mmx5mmx0.95mm Features   RF Frequency=17.7GHz to 26.5GHz LO Frequency=6.85GHz to 15.25GHz  IF Frequency=DC to 4GHz  Conversion Gain=13dB

Contextual Info: SPF5344Z SPF5344Z 0.8GHz to 4GHz, GaAs pHEMT 2Stage Low Noise MMIC Amplifier 0.8GHz to 4GHz, GaAs pHEMT 2-STAGE LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5344Z is a high performance 2-Stage pHEMT MMIC LNA designed for use from 0.8GHz to 4GHz. It offers low noise figure and high linearity in

crow mh 10 PIR

Abstract: BOSCH cross reference intellisense is310 PS-1523 RK815DT crow mh-10 7939WG k940 2707A-L Sentrol 6155
Contextual Info: Sensors Competitive Cross Reference Charts Magnetic Contacts Commercial Recess Mount Surface Mount Honeywell Honeywell ADEMCO IntelliSense Aleph GRI Sentrol/GE 7939WG 7939, 7939W, PR-20439 MPS20 7939-2 7939-2 - 7940 7940 943WG PAL-T 940 950 Tane DC2451, DC2451WG