DS110317 Search Results

RF3931

Abstract: 46dBm
Contextual Info: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN

thermocouple gaas

Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology    RF IN

RF7170

Abstract: RF717 RF7170TR13 RF7170TR7
Contextual Info: RF7170 QUAD-BAND TX/DUAL-BAND RX GSM/GPRS TRANSMIT MODULE     Low RX Insertion Loss Two Symmetrical RX Ports 0dBm to 6dBm Drive Level, >50dB of Dynamic Range Integrated Power-Flattening Circuit for Lower Power Variation under Mismatch Conditions

Contextual Info: RF7170 QUAD-BAND TX/DUAL-BAND RX GSM/GPRS TRANSMIT MODULE     Low RX Insertion Loss Two Symmetrical RX Ports 0dBm to 6dBm Drive Level, >50dB of Dynamic Range Integrated Power-Flattening Circuit for Lower Power Variation under Mismatch Conditions