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    DS100527 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    80N65B4

    Contextual Info: Advance Technical Information IXXH80N65B4 XPTTM 650V IGBT GenX4TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 650V 80A 2.0V 63ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		ixxh80n65b4ic110o-24780n65b4 PDF

    RFVC1800

    Abstract: RFVC-1800
    Contextual Info: RFVC1800 RFVC1800 WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz Package: 4 mm x 4 mm x 1.1 mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5 V supply for circuit bias and 0 to +13 V Vtune for frequency control. The


    Original     		rfvc1800ds100527rfvc1800pck-410rfvc1800s2+210pcsrfvc-1800 PDF

    FPD6836SOT343E

    Abstract: 0604HQ FPD6836SOT343ESB FPD6836SOT343ESQ 0603 footprint IPC im 1117 atc x7r transistor bc 540
    Contextual Info: FPD6836SOT343E FPD6836SOT3 43ELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive


    Original     		fpd6836sot343efpd6836sot343elow-noiseot343+111850mhz2002/95/ec18dbmmx7500604hqfpd6836sot343esbfpd6836sot343esq0603 footprint ipcim 1117atc x7rtransistor bc 540 PDF