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Catalog Datasheet	Type	Document Tags	PDF
t16n50 Abstract: 16N50 depletion mode mosfet IXTH16N50D2 IXTT16N50D2 DS100261 S5250 Contextual Info: Advance Technical Information IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 500V 16A 240mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH16N50D2 IXTT16N50D2 O-247 O-247) O-268 100ms 16N50D2 t16n50 16N50 depletion mode mosfet IXTH16N50D2 IXTT16N50D2 DS100261 S5250	PDF
54AC10 Abstract: 54ACT10 54ACTQ10 74AC AC10 Contextual Info: 54AC10 Triple 3-Input NAND Gate General Description The ’AC10 contains three, 3-input NAND gates. Features n Outputs source/sink 24 mA n Standard Military Drawing SMD — ’AC10: 5962-87610 n For Military 54ACT10 device see the 54ACTQ10 n ICC reduced by 50% on 54AC only	Original	54AC10 54ACT10 54ACTQ10 DS100261-1 DS100261-3 DS100261-2 DS100261 54AC10 Junctio959 54ACTQ10 74AC AC10	PDF
54AC10 Abstract: 54ACT10 54ACTQ10 AC10 Contextual Info: & Semiconductor 54AC10 Triple 3-Input NAND Gate General Description The ’AC10 contains three, 3-input N AND gates. O utputs source/sink 24 m A S tandard M ilitary Drawing SMD — 'AC10: 5962-87610 For M ilitary 54A C T10 device see the 54A C TQ 10 Features	OCR Scan	54AC10 54ACT10 54ACTQ10 DS100261-3 00IHI110 DS100261-2 DS100261 AC10	PDF
Contextual Info: IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = > ≤ 500V 16A 300mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSX Continuous ±20	Original	IXTH16N50D2 IXTT16N50D2 O-247 O-247) O-268 100ms 16N50D2	PDF
54AC10 Abstract: JM38510 fairchild Contextual Info: 54AC10 Triple 3-Input NAND Gate General Description The ’AC10 contains three, 3-input NAND gates. Features n Outputs source/sink 24 mA n Standard Military Drawing SMD — ’AC10: 5962-87610 n For Military 54ACT10 device see the 54ACTQ10 n ICC reduced by 50% on 54AC only	Original	54AC10 54ACT10 54ACTQ10 DS100261-1 DS100261-3 DS100261-2 DS100261 JM38510R75002SD AN-925: JM38510 fairchild	PDF
t16n50 Abstract: 16N50D2 IXTH16N50D2 IXTT16N50D2 DS100261 Contextual Info: Preliminary Technical Information IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 500V 16A 240mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH16N50D2 IXTT16N50D2 O-247 O-268 O-247) O-247 100ms 16N50D2 t16n50 IXTT16N50D2 DS100261	PDF
Contextual Info: 54AC10 54AC10 Triple 3-Input NAND Gate Literature Number: SNOS080 54AC10 Triple 3-Input NAND Gate General Description The ’AC10 contains three, 3-input NAND gates. Features n Outputs source/sink 24 mA n Standard Military Drawing SMD — ’AC10: 5962-87610	Original	54AC10 54AC10 SNOS080 54ACT10 54ACTQ10 DS100261-1 DS100261-3 DS100261-2	PDF